• 전자공학회논문지
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• 제54권1호
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• pp.33-38
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• 2017

본 논문에서는 채널 당 3.125-Gb/s 동작 속도를 갖는 4-채널 공통-캐소드 VCSEL 다이오드 드라이버 어레이 칩을 구현하였다. 스위칭 동작하는 메인 드라이버의 동작속도 향상을 위해, 액티브 인덕터를 사용한 전치증폭단과 이퀄라이저 기능을 탑재한 입력버퍼단으로 구성하였다. 특히 개선된 입력버퍼단의 경우, 주파수 영역의 피킹으로 대역폭 증대뿐 아니라 비교적 적은 전류로 동작하도록 설계하였다. 본 논문에서 사용한 VCSEL 다이오드는 2.2 V 순방향 전압과 $50{\Omega}$ 기생저항 및 850 fF 기생 캐패시턴스를 갖는다. 또한, 3.0 mA 변조전류 및 3.3 mA 바이어스 전류로 동작하므로, 두 개의 독립적인 전류소스로 구동 가능한 current steering 기반의 메인 드라이버를 설계하였다. 제안한 4-채널 광 송신기 어레이 칩은 $0.11-{\mu}m$ CMOS 공정을 이용하여 제작하였다. 칩 코어의 면적은 $0.15{\times}0.18{\mu}m^2$ 이며, 채널 당 22.3 mW 전력소모를 갖는다.

• BMB Reports
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• 제28권3호
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• pp.221-226
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• 1995

Dopamine mediates inhibitory responses in Helix aspersa neurons from the right parietal lobe ("F-lobe") of the circumoesophageal ganglia. The effects appeared as a dose-dependent hyperpolarization of the plasma membrane and a decrease in the occurrence of spontaneous action potentials. The average hyperpolarization with 5 ${\mu}m$ dopamine was -12 mV (${\pm}1.5$mV, S.D., n=12). Dopamine also modulated the currents 'responsible for shaping the action potentials in these neurons. When dopamine was added and action potentials were triggered by an injection of current, the initial depolarization was slowed, the amplitude and the duration of action potentials were decreased, and the after-hyperpolarization was more pronounced. The amplitude and the duration of action potential were reduced about 15 mV and about 13% by 5 ${\mu}m$ dopamine, respectively. The effects of dopamine on the resting membrane potentials and the action potentials of Helix neurons were dose-dependent in the concentration range 0.1 ${\mu}m$ to 50 ${\mu}m$. In order to show 1) that the effects of dopamine were mediated by dopamine receptors rather than by direct action on ionic channels and 2) which type of dopamine receptor might be responsible for the various effects, we assayed the ability of mammalian dopamine receptor antagonists, SCH-23390 (antagonist of D1 receptor) and spiperone (antagonist of D2 receptor), to block the dopamine-dependent changes. The D1 and D2 antagonists partially inhibited the dopamine-dependent hyperpolarization and the decrease in action potential amplitude. They both completely blocked the decrease in action potential duration and the increase in action potential after-hyperpolarization. The dopamine-induced slowdown of the depolarization in the initial phase of the action potentials was less effected by SCH-23390 and spiperone. From the results we suggest 1) that Helix F-lobe neurons may have a single type of dopamine receptor that binds both SCH-23390 and spiperone and 2) that the dopamine receptor of Helix F-lobe neurons may be homologous with and primitive to the family of mammalian dopamine receptors.

• 대한금속재료학회지
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• 제49권2호
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• pp.104-111
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• 2011

An ultrafine grained Mg-9Al-1Zn magnesium alloy with the mean grain size less than $1{\mu}m$ was produced by using high-ratio differential speed rolling. The processed alloy exhibited excellent superplasticity at relatively low temperatures. The micro-forming tests were carried out using a micro-forging apparatus with micro V-grooved shaped dies made of silicon and the micro-formability was evaluated by means of micro-formability index, $R_f$ ($=A_f/A_g$, $A_f$: formed and inflowed area into the V-groove, $A_g$: area of the V-groove). The $R_f$ value increased with temperature up to $280^{\circ}C$ and then decreased beyond $300^{\circ}C$. The decrease of the $R_f$ value at $300^{\circ}C$ was attributed to the accelerated grain coarsening. Increasing the micro-forging pressure increased the $R_f$ values. At a given die geometry, die filling ability decreased as the die position moved away from the die center to the end. FEM simulation predicted this behavior and a method of improving this problem was proposed.

• Journal of Electrical Engineering and Technology
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• 제9권6호
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• pp.2070-2078
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• 2014

In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage transfer curves (VTCs) of a common-source (CS) amplifier based on the HGD pnpn TFET, the operation point (Q-point) was obtained at $V_{DS}=1V$, where the maximum available output swing was acquired without waveform distortion. The slope of VTC of the amplifier was 9.21 V/V (19.4 dB), which mainly resulted from the ponderable direct-current (DC) characteristics of HGD pnpn TFET. Along with the DC performances, frequency response with a small-signal voltage of 10 mV has been closely investigated in terms of voltage gain ($A_v$), unit-gain frequency ($f_{unity}$), and cut-off frequency ($f_T$). The Ge/GaAs HGD pnpn TFET demonstrated $A_v=19.4dB$, $f_{unity}=10THz$, $f_T=0.487$ THz and $f_{max}=18THz$.

• E2M - 전기 전자와 첨단 소재
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• 제3권1호
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• pp.29-35
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• 1990

원통형 및 평판형 유전체에 임펄스전압을 인가하는 경우 나타나는 50%의 Flash over전압 (F.O.V)특성 및 Lichtenberg 도형에 미치는 배후전극의 영향을 관측하였다. F.O.V는 배후전극이 있는 경우가 없을 때보다 인가전압을 저하시킬 수 있었고 Lichtenberg도형에서 방전로의 진전상태는 배후전극의 존재로 인하여 크게 신장함을 알았다.

• 대한수학회지
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• 제40권2호
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• pp.225-239
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• 2003

(G, <) is an ordered group if'<'is a total order relation on G in which f < g implies that xfy < xgy for all f, g, x, y $\in$ G. We say that (G, <) is centrally ordered if (G, <) is ordered and ［G,D］ $\subseteq$ C for every convex jump C $\prec$ D in G. Equivalently, if $f^{-1}g f{\leq} g^2$ for all f, g $\in$ G with g > 1. Every order on a torsion-free locally nilpotent group is central. We prove that if every order on every two-generator subgroup of a locally soluble orderable group G is central, then G is locally nilpotent. We also provide an example of a non-nilpotent two-generator metabelian orderable group in which all orders are central.

• Kyungpook Mathematical Journal
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• 제54권4호
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• pp.639-653
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• 2014

In [9], Kauffman introduced virtual knot theory and generalized many classical knot invariants to virtual ones. For example, he extended the Jones polynomials $V_K(t)$ of classical links to the f-polynomials $f_K(A)$ of virtual links by using bracket polynomials. In [4], M. Goussarov, M. Polyak and O. Viro introduced finite type invariants of virtual knots. In this paper, we give a necessary condition for a virtual knot invariant to be of finite type by using $t(a_1,{\cdots},a_m)$-sequences of virtual knots. Then we show that the higher derivatives $f_K^{(n)}(a)$ of the f-polynomial $f_K(A)$ of a virtual knot K at any point a are not of finite type unless $n{\leq}1$ and a = 1.

• Journal of applied mathematics & informatics
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• 제42권2호
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• pp.367-377
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• 2024

Let G = (V, E) be a graph with p-vertices and q-edges and let R^◦ be a finite zero ring of order n. An injective function f : V (G) → {r₁, r₂, _…, r_k}, where r_i ∈ R^◦ is called vertex pair sum k-zero ring labeling, if it is possible to label the vertices x ∈ V with distinct labels from R^◦ such that each edge e = uv is labeled with f(e = uv) = [f(u) + f(v)] (mod n) and the edge labels are distinct. A graph admits such labeling is called vertex pair sum k-zero ring graph. The minimum value of positive integer k for a graph G which admits a vertex pair sum k-zero ring labeling is called the vertex pair sum k-zero ring index denoted by 𝜓_pz(G). In this paper, we defined the vertex pair sum k-zero ring labeling and applied to some graphs.

• 대한기계학회논문집B
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• 제37권6호
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• pp.545-550
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• 2013

본 논문은 정전기력을 이용한 마찰력 변조를 이용하여 손끝을 통한 촉각정보의 입출력을 동시 구현하는 소자를 제안하였다. 기존의 촉각소자들이 촉각정보의 입력 및 출력을 개별적으로 구현한 것에 비해 본 연구는 손끝의 수직/수평 방향 동작 인식과 질감 구현을 동시에 구현하였다는 점에서 차별성을 가진다. 실험분석을 통해 검증한 손끝 동작 인식기능은 수직방향의 클릭의 경우 0.146nF/$40{\mu}m$, 수평방향의 경우 0.09nF/$750{\mu}m$의 정전용량 변화를 통해 인식 가능하였으며, 질감 구현의 경우 정전기적 인력을 통해 마찰력을 32~152mN의 범위에서 제어할 수 있음을 확인하였다. 교류전압을 이용한 수평적 진동은 60V, 3Hz에서 최대 128.1mN의 마찰력 변조를 구현하였으며, 이는 기존 연구 대비 32% 향상을 보여준다. 본 연구는 손끝에서 정보의 입출력을 동시 구현하여 정보기기의 촉각인터페이스에 적용 가능하다.

• 전기화학회지
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• 제3권4호
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• pp.235-240
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• 2000

고출력 전기화학 캐패시터를 위한 전극제조공정으로 screen printing과 doctor blade법이 연구되었다. Screen printing에 의해서 제작된 비정질 $MnO_2$전극으로 측정된 CV (cyclic voltammogram)는 이상적인 캐패시터에 가까운 특성을 보여주었다. 50mV/s의 scan rate에서의 CV로부터 계산된 비용량은 $140{\mu}m,\;24{\mu}m,\; 3{\mu}m$의 전극두께에 대해서 각각 5.8F/g과, 81.8F/g, 172.0F/g의 값을 나타내었다. Screen printing전극에서의 $MnO_2$활물질의 이용율을 $100\%$로 하였을 때, paste와 doctor blade법의 이용율은 각각 $3.4\%$와 $47.6\%$이었다. Screen printing은 고출력 응용을 위한 얇은 전극의 코팅 방법으로 우수한 특성을 보였다.