• Journal of the Korean earth science society
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• v.36 no.7
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• pp.661-673
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• 2015

UBVI CCD photometry of the intermediate age open cluster NGC 7790 has been obtained using AZT-22 1.5 m telescope (f/7.74) at the Maidanak Astronomical Observatory in Uzbekistan. NGC 7790 contains three ${\delta}$ Cep variable stars including CEa Cas, CEb Cas, and CF Cas. PSF photometry was carried out using IRAF/DAOPHOT for all observations. The total number of stars observed both in V and I filter was 1008 and the limiting magnitude was $V{\approx}22$. To determine atmospheric extinction coefficients and photometric zero points, many blue and red standard stars as well as the standard stars in the celestial equator under various airmass were observed. Photometric data were transformed into the standard Johnson-Cousins' UBVI standard system. From the analysis of UBVI color-magnitude diagram and color-color diagram, the color excess in V and I filter [$E(B-V)=0.58{\pm}0.02$], the selective extinction ratio in V and I filter [$R_V{\equiv}A_V/E(B-V)=3.02{\pm}0.09$] and distance modulus ($V_0-M_V=12.65{\pm}0.10$) of the cluster were determined. The age of the cluster was estimated to be log $age=8.05{\pm}0.05$ [yr] based on the position of these three Cepheid variables in the color-magnitude diagram, the isochrone of the Geneva group ($Ekstr{\ddot{o}}m$ et al., 2012-Z=0.019), and the isochrone of the Padova group (Bressan et al., 2012-Z=0.014) were used to compare each other. Of them, the Geneva models that considered stellar rotation well described the position of ${\delta}$ Cepheid variables in the blue loop. Although they were well consistent with standard period-luminosity relation of ${\delta}$ Cepheid variables, three Cepheid variables in NGC 7790 were, on average, brighter by about 0.5 mag than the absolute magnitude estimated from the mean period-luminosity relation at a given period.

• ALGAE
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• v.29 no.4
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• pp.321-331
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• 2014

Vertebrata lanosa is an abundant and obligate red algal epiphyte of Ascophyllum nodosum that forms part of a complex and highly integrated symbiotic system that includes the ascomycete, Mycophycias ascophylli. As part of ongoing studies to resolve interactions among species in the symbiosis, we used pulse amplitude modulation fluorimetry of chlorophyll a fluorescence, from photosystem II (PSII), to measure the maximum quantum yield ($F_v/F_m$) of PSII [$QY(II)_{max}$] and relative photosynthetic electron transport rates (rETR), as a function of light intensity, in order to evaluate the photosynthetic capacity of the two algal symbionts in the field and in the laboratory under different treatments. Our primary question was 'Is the ecological integration of these species reflected in a corresponding physiological integration involving photosynthetic process?' In the laboratory we measured changes in $QY(II)_{max}$ in thalli of V. lanosa and A. nodosum over one week periods when maintained together in either attached or detached treatments or when maintained separated from each other. While the $QY(II)_{max}$ of PSII of A. nodosum remained high and showed no significant variation among treatments, V. lanosa showed decreasing performance in the following conditions: V. lanosa attached to A. nodosum, V. lanosa in the same culture, but not attached to A. nodosum, and V. lanosa alone. These results are consistent with observations in which rETR was reduced in V. lanosa maintained alone versus attached to A. nodosum. Values for $QY(II)_{max}$ in V. lanosa measured in the field in fully submerged thalli were similar to those measured in the laboratory when V. lanosa was attached to it obligate host A. nodosum. Our results provide evidence of a physiological association of the epiphyte and its host that reflects the known ecology.

• Animal cells and systems
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• v.15 no.4
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• pp.259-267
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• 2011

This study was undertaken to produce a $F_{ab}$ fragment of a human monoclonal antibody reactive to oxidized and carbamylated low-density lipoprotein (oxLDL and cLDL) using phage display technology. An analysis of DNA sequences of this $F_{ab}$, termed plaque 15,16-46 $F_{ab}$, revealed that the rearranged $V_H$ was highly mutated. Complementarity-determining regions of the $V_H$ showed a very high R/S ratio and contained many positively charged amino acids. In direct binding and competitive ELISA, the $F_{ab}$ reacted strongly with both MDA-LDL and Cu-oxLDL forms of oxLDL, and also showed high affinity for cLDL. Immunofluorescence and immunohistochemical analyses showed that this $F_{ab}$ positively stained atherosclerotic aortic plaques in $ApoE^{-/-}$ mice as well as those in patients with atherosclerosis. The $F_{ab}$ also showed positive staining in placental decidua from patients with preeclampsia. It is suggested that the plaque 15,16-46 $F_{ab}$ against oxLDL and cLDL might possibly be applicable for developing a diagnostic reagent for both human and rodent animal research to detect and characterize atherosclerotic disease progression in atherosclerotic lesions as well as exploring the pathogenesis of atherogenic diseases such as preeclampsia.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.752-758
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• 2004

This paper reports on the DC and RF characteristics of AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beau epitaxy(MBE) on sapphire substrates. The devices with a 0.5 ${\mu}$m gate-length exhibited relatively flat transconductance(g$\_$m/), which results from the enhanced carrier confinement of the InGaN channel. The maximum drain current was 880 mA/mm with a peak g$\_$m/ of 156 mS/mm, an f$\_$T/ of 17.3 GHz, and an f$\_$MAX/ or 28.7 GHz. In addition to promising DC and RF results, pulsed I-V and current-switching measurements showed little dispersion in the unpassivated AlGaN/InGaN HEMTs. These results suggest that the addition of In to the GaN channel improves the electron transport characteristics as well as suppressing current collapse that is related to the surface trap states.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.2 s.117
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• pp.213-218
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• 2007

In this paper, we propose the design and fabrication on high frequency CMOS VCO for DS-UWB(Direct-Sequence Ultra-WideBand) applications using 0.18 ${\mu}m$ process. The complementary cross-coupled LC oscillator architecture which is composed of PMOS, NMOS symmetrically, is designed for improving the phase noise characteristic. The resistor is used instead of current source that reduce the 1/f noise of current source. The high-speed buffer is needed for measuring the output characteristic of VCO using spectrum analyzer, therefore the high-speed inverter buffer is designed with VCO. A fabricated core VCO size is $340{\mu}m{\times}535{\mu}m$. The VCO is tunable between 7.09 and 7.52 GHz and has a phase noise lower than -107 dBc/Hz at 1-MHz offset over entire tuning range. The measured harmonic suppression is 32 dB. The VCO core circuit draws 2.0 mA from a 1.8 V supply.

• Archives of Pharmacal Research
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• v.29 no.11
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• pp.1049-1054
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• 2006

Activation of Sphingosine kinase (Sphk) increases a bioactive lipid, sphingosine 1-phosphate (S1P) and has been observed in a variety of cancer cells. Therefore, inhibition of Sphk activity was an important target for the development of anticancer drugs. As a searching tool for Sphk inhibitor, we developed fluorescent Sphk activity assay combined with high performance liquid chromatography (HPLC). Previously we established murine teraticarcinoma mutant F9-12 cells which lack S1P lyase and stably express Sphk1. By using F9-12 cells, optimal assay conditions were established as follows; $100\;{\mu}M\;of\;C_{17}-Sph\;and\;30\;{\mu}g$ protein of F9-12 cells lysate in 20 min. Sphingosine analog $C_{17}-Sph$ was efficiently phosphorylated by Sphk activity ($K_{m}:67.08\;{\mu}M,\;V_{max}\;:1507.5\;pmol/min/mg$). New product $C_{17}-S1P$ was separated from S1P in reversed-phase HPLC. In optimized conditions, 300 nM of phorbol 12-myristate 13-acetate (PMA) increased Sphk activity approximately twice while $20\;{\mu}M$ of N,N-dimethylsphingosine (DMS) reduced 70% of Sphk activity in F9-12 cells lysate. In conclusion, we established non-radioactive but convenient Sphk assay system by using HPLC and F9-12 cells.

• Journal of the Korean Electrochemical Society
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• v.5 no.3
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• pp.111-116
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• 2002

Electrochemical scanning tunneling microscopy was employed to study the evolution of surface morphology during electrochemical preparation of Si(111)-H from Si(111) oxide. Anodic dark current of cyclic voltammogram in 0.2M $NH_4F$ solution (pH 4.7) decreased as the number of cycles increased and remained nearly constant after the second cycle. Then, the Si(111) oxide was entirely stripped, which was followed by H termination on the Si(111) surface. Hydrides at kink and step sites were etched more rapidly than on the terrace, which remained triangle pits with [112] oriented steps where existed stable monohydride. Then, triangle pits deepened. During chronomamperometry at 0.4V anodic dark current shoulder appeared and decreased slowly, indicated the stripping of Si(111) oxide and the formation of stable (112) oriented steps with monohydride. Additionally, the etching mechanism of Si(111)-H in 0.2M $NH_4F(pH 4.7)$ solution at +0.4V was discussed.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.461-464
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• 1998

Self-aligned AlGaAs/GaAs HBTs with the emitter area of 1.5*10.mu.$m^{2}$ were fabricated usng $WN_{x}$ as emitter metal. Their DC and RF characteristics were investigated. The common emitter current gain was 45 at $J_{c}$ = 6*$10^{4}$A/$cm^{2}$. From the Gummel plot, the ideality factors of $I_{c}$ and $I_{B}$ were 1.18 and 1.70, respectively. Emitter and base resistance were extracted from voltage drop region in gummel plot, and their values were 5.3.ohm. and 38.2.ohm.. The extrapolated $f_{T}$ = 72GHz and $f_{max}$ = 81GHz were obtained at $V_{CE}$ = 2V.

• Journal of Sensor Science and Technology
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• v.19 no.2
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• pp.137-141
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• 2010

In this paper, we fabricated silicon piezoresistive pressure sensor with dry etching technology which used Deep-RIE and etching delay technology which used SOI(silicon-on-insulator) wafer. We improved pressure sensor offset and its temperature dependence by removing oxidation layer of SOI wafer which was used for dry etching delay layer. Sensitivity of the fabricated pressure sensor was about 0.56 mV/V${\cdot}$kPa at 10 kPa full-scale, and nonlinearity of the fabricated pressure sensor was less than 2 %F.S. The zero off-set change rate was less than 0.6 %F.S.

• Proceedings of the KIEE Conference
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• 2007.10a
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• pp.483-484
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• 2007

In this paper, we describe a chip design technique for instrumentation amplifier using a nested-chopping technique. Conventional chopping technique uses a pair of chopper, but nested chopping technique uses two pairs of chopper to reduce residual offset and 1/f noise. The inner chopper pair removes the 1/f noise, while the outer chopper pair reduces the residual offset. Our instrumentation amplifier using a nested chopping technique has residual offset under 100 nV. We also implement very low frequency filter. Since this filter needs very large RC time constant, we use a technique named 'diode connected PMOS' to increase R with small die area. The total power consumption is 3.1 mW at the supply voltage of 3.3V with the 0.35um general CMOS technology. The die area of implemented chip was $530um{\times}300um$.