• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.33-38
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• 2017

In this paper, a 4-channel common-cathode VCSEL diode driver array with 3.125 Gb/s per channel operation speed is realized. In order to achieve faster speed of the switching main driver with relatively large transistors, the transmitter array chip consists of a pre-amplifier with active inductor stage and also an input buffer with modified equalizer, which leads to bandwidth extension and reduced current consumption. The utilized VCSEL diode provides inherently 2.2 V forward bias voltage, $50{\Omega}$ resistance, and 850 fF capacitance. In addition, the main driver based upon current steering technique is designed, so that two individual current sources can provide bias currents of 3.0 mA and modulation currents of 3.3 mA to VCSEL diodes. The proposed 4-channel VCSEL driver array has been implemented by using a $0.11-{\mu}m$ CMOS technology, and the chip core occupies the area of $0.15{\times}0.18{\mu}m^2$ and dissipates 22.3 mW per channel.

• BMB Reports
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• v.28 no.3
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• pp.221-226
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• 1995

Dopamine mediates inhibitory responses in Helix aspersa neurons from the right parietal lobe ("F-lobe") of the circumoesophageal ganglia. The effects appeared as a dose-dependent hyperpolarization of the plasma membrane and a decrease in the occurrence of spontaneous action potentials. The average hyperpolarization with 5 ${\mu}m$ dopamine was -12 mV (${\pm}1.5$mV, S.D., n=12). Dopamine also modulated the currents 'responsible for shaping the action potentials in these neurons. When dopamine was added and action potentials were triggered by an injection of current, the initial depolarization was slowed, the amplitude and the duration of action potentials were decreased, and the after-hyperpolarization was more pronounced. The amplitude and the duration of action potential were reduced about 15 mV and about 13% by 5 ${\mu}m$ dopamine, respectively. The effects of dopamine on the resting membrane potentials and the action potentials of Helix neurons were dose-dependent in the concentration range 0.1 ${\mu}m$ to 50 ${\mu}m$. In order to show 1) that the effects of dopamine were mediated by dopamine receptors rather than by direct action on ionic channels and 2) which type of dopamine receptor might be responsible for the various effects, we assayed the ability of mammalian dopamine receptor antagonists, SCH-23390 (antagonist of D1 receptor) and spiperone (antagonist of D2 receptor), to block the dopamine-dependent changes. The D1 and D2 antagonists partially inhibited the dopamine-dependent hyperpolarization and the decrease in action potential amplitude. They both completely blocked the decrease in action potential duration and the increase in action potential after-hyperpolarization. The dopamine-induced slowdown of the depolarization in the initial phase of the action potentials was less effected by SCH-23390 and spiperone. From the results we suggest 1) that Helix F-lobe neurons may have a single type of dopamine receptor that binds both SCH-23390 and spiperone and 2) that the dopamine receptor of Helix F-lobe neurons may be homologous with and primitive to the family of mammalian dopamine receptors.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.104-111
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• 2011

An ultrafine grained Mg-9Al-1Zn magnesium alloy with the mean grain size less than $1{\mu}m$ was produced by using high-ratio differential speed rolling. The processed alloy exhibited excellent superplasticity at relatively low temperatures. The micro-forming tests were carried out using a micro-forging apparatus with micro V-grooved shaped dies made of silicon and the micro-formability was evaluated by means of micro-formability index, $R_f$ ($=A_f/A_g$, $A_f$: formed and inflowed area into the V-groove, $A_g$: area of the V-groove). The $R_f$ value increased with temperature up to $280^{\circ}C$ and then decreased beyond $300^{\circ}C$. The decrease of the $R_f$ value at $300^{\circ}C$ was attributed to the accelerated grain coarsening. Increasing the micro-forging pressure increased the $R_f$ values. At a given die geometry, die filling ability decreased as the die position moved away from the die center to the end. FEM simulation predicted this behavior and a method of improving this problem was proposed.

• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.2070-2078
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• 2014

In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage transfer curves (VTCs) of a common-source (CS) amplifier based on the HGD pnpn TFET, the operation point (Q-point) was obtained at $V_{DS}=1V$, where the maximum available output swing was acquired without waveform distortion. The slope of VTC of the amplifier was 9.21 V/V (19.4 dB), which mainly resulted from the ponderable direct-current (DC) characteristics of HGD pnpn TFET. Along with the DC performances, frequency response with a small-signal voltage of 10 mV has been closely investigated in terms of voltage gain ($A_v$), unit-gain frequency ($f_{unity}$), and cut-off frequency ($f_T$). The Ge/GaAs HGD pnpn TFET demonstrated $A_v=19.4dB$, $f_{unity}=10THz$, $f_T=0.487$ THz and $f_{max}=18THz$.

• Electrical & Electronic Materials
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• v.3 no.1
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• pp.29-35
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• 1990

원통형 및 평판형 유전체에 임펄스전압을 인가하는 경우 나타나는 50%의 Flash over전압 (F.O.V)특성 및 Lichtenberg 도형에 미치는 배후전극의 영향을 관측하였다. F.O.V는 배후전극이 있는 경우가 없을 때보다 인가전압을 저하시킬 수 있었고 Lichtenberg도형에서 방전로의 진전상태는 배후전극의 존재로 인하여 크게 신장함을 알았다.

• Journal of the Korean Mathematical Society
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• v.40 no.2
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• pp.225-239
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• 2003

(G, <) is an ordered group if'<'is a total order relation on G in which f < g implies that xfy < xgy for all f, g, x, y $\in$ G. We say that (G, <) is centrally ordered if (G, <) is ordered and ［G,D］ $\subseteq$ C for every convex jump C $\prec$ D in G. Equivalently, if $f^{-1}g f{\leq} g^2$ for all f, g $\in$ G with g > 1. Every order on a torsion-free locally nilpotent group is central. We prove that if every order on every two-generator subgroup of a locally soluble orderable group G is central, then G is locally nilpotent. We also provide an example of a non-nilpotent two-generator metabelian orderable group in which all orders are central.

• Kyungpook Mathematical Journal
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• v.54 no.4
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• pp.639-653
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• 2014

In [9], Kauffman introduced virtual knot theory and generalized many classical knot invariants to virtual ones. For example, he extended the Jones polynomials $V_K(t)$ of classical links to the f-polynomials $f_K(A)$ of virtual links by using bracket polynomials. In [4], M. Goussarov, M. Polyak and O. Viro introduced finite type invariants of virtual knots. In this paper, we give a necessary condition for a virtual knot invariant to be of finite type by using $t(a_1,{\cdots},a_m)$-sequences of virtual knots. Then we show that the higher derivatives $f_K^{(n)}(a)$ of the f-polynomial $f_K(A)$ of a virtual knot K at any point a are not of finite type unless $n{\leq}1$ and a = 1.

• Journal of applied mathematics & informatics
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• v.42 no.2
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• pp.367-377
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• 2024

Let G = (V, E) be a graph with p-vertices and q-edges and let R^◦ be a finite zero ring of order n. An injective function f : V (G) → {r₁, r₂, _…, r_k}, where r_i ∈ R^◦ is called vertex pair sum k-zero ring labeling, if it is possible to label the vertices x ∈ V with distinct labels from R^◦ such that each edge e = uv is labeled with f(e = uv) = [f(u) + f(v)] (mod n) and the edge labels are distinct. A graph admits such labeling is called vertex pair sum k-zero ring graph. The minimum value of positive integer k for a graph G which admits a vertex pair sum k-zero ring labeling is called the vertex pair sum k-zero ring index denoted by 𝜓_pz(G). In this paper, we defined the vertex pair sum k-zero ring labeling and applied to some graphs.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.6
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• pp.545-550
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• 2013

We present a tactile information transceiver using a friction-tunable slider-pad. While previous tactile information devices were focused on either input or output functions, the present device offers lateral position/vertical direction detection and texture expression. In characterizing the tactile input performance, we measured the capacitance change due to the displacement of the slider-pad. The measured difference for a z-axis click was 0.146 nF/$40{\mu}m$ when the x-y axis navigation showed 0.09 nF/$750{\mu}m$ difference. In characterizing the texture expression, we measured the lateral force due to a normal load. We applied a voltage between parallel electrodes to induce electrostatic attraction in DC and AC voltages. We measured the friction under identical fingertip action conditions, and obtained friction in the range of 32-152 mN and lateral vibration in the force range of 128.1 mN at 60 V, 2 Hz. The proposed device can be applied to integrated tactile interface devices for mobile appliances.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.235-240
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• 2000

Screen-printing and doctor blade method were investigated and proposed as an electrode coating process for high power capacitor. CV measured from the amorphous $MnO_2$ electrode prepared by screen-printing shows closer to ideal capacitor characteristics. Specific capacitances calculated from CVs with potential scan rate of 50mV/s were 5.8, 81.8, and 172.0 F/g for electrode thickness of $140{\mu}m,\;24{\mu}m,\; 3{\mu}m$, respectively. Assumed that utilization of active $MnO_2$ in electrode of screen-printing is $100\%$, those were $3.4\%$ in one of paste method and $47.6\%$ in one of doctor blade method. The screen-printing can be good technique to coat thin film on current collector for high power application.