• Title/Summary/Keyword: EuN

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Optical characterization on undoped and Mg-doped GaN implanted with Eu (Eu이 이온주입된 undoped와 Mg-doped GaN의 분광 특성 연구)

  • Lee, So-Won;Moon, Joo-Young;Rhee, Seuk-Joo
    • Journal of the Korean Vacuum Society
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    • v.17 no.4
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    • pp.346-352
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    • 2008
  • Eu sites and the effect of Mg codoping were investigated in Eu-implanted GaN films. Photoluminescence (PL) and PL excitation spectroscopies were performed on 620nm $^5D_0\;{\rightarrow}\;^7F_2$ Eu ionic level transition and revealed the existence of 4 different Eu sites including the known 2 sites. PL intensity from one of the sites increased by a factor of 1.6 by the Mg-codoping. The enhancement of PL by Mg-codoping was less pronounced than Er- and Nd-implanted GaN, in which the trap-mediated energy transfer dominates. In GaN:Eu the above-gap excitation transfers the energy directly to the Mg related Eu site.

Synthesis and Luminescence Properties of Sr/SmSi5N8:Eu2+ Phosphor for White Light-Emitting-Diode

  • Luong, Van Duong;Lee, Hong-Ro
    • Journal of the Korean institute of surface engineering
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    • v.47 no.4
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    • pp.192-197
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    • 2014
  • Red-emitting nitride phosphors recently attracted considerable attention because of their high thermal stability and high color rendering index properties. For excellent phosphor of white light-emitting-diode, ternary nitride phosphor of $Sr/SmSi_5N_8:Eu^{2+}$ with different $Eu^{2+}$ ion concentration were synthesized by solid state reaction method. In this work, red-emitting nitride $Sr/SmSi_5N_8:Eu^{2+}$ phosphor was successfully synthesized by using multi-step high frequency induction heat treatment. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Sr/SmSi_5N_8:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Sr/SmSi_5N_8:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 300 - 550 nm, namely from UV to visible area with distinct enhanced emission peaks. With an increase of $Eu^{2+}$ ion concentration, the peak position of emission in spectra was red-shifted from 613 to 671 nm. After via multi-step heat treatment, prepared phosphor showed excellent luminescence properties, such as high emission intensity and low thermal quenching, better than commercial phosphor of $Y_3Al_5O_{12}:Ce^{3+}$. Using $Eu_2O_3$ as a raw material for $Eu^{2+}$ dopant with nitrogen gas flowing instead of using commercial EuN chemical for $Sr/SmSi_5N_8:Eu^{2+}$ synthesis is one of characteristic of this work.

Extraction Behavior of Am(III) and Eu(III) From Nitric Acid Using Room Temperature Ionic Liquid (질산용액으로부터 이온성 액체를 이용한 Am(III)과 Eu(III)의 추출 거동)

  • Kim, Ik-Soo;Chung, Dong-Yong;Lee, Keun-Young;Lee, Eil-Hee
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.16 no.3
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    • pp.347-357
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    • 2018
  • The applicability of room temperature ionic liquids (RTILs), 1-alkyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([$C_nmim$] [$Tf_2N$]), was investigated for the extraction of Am(III) and Eu(III) from nitric acid using n-octyl(phenyl)-N,N-diisobutyl carbamoylmethyl phosphine oxide (CMPO) and tri-n-butylphosphate (TBP) as extractants. The distribution ratios of Am(III) and Eu(III) in CMPO-TBP/[$C_nmim$][$Tf_2N$] were measured as a function of various parameters such as the concentrations of nitric acid, CMPO, and TBP. The results were compared with those obtained in CMPO-TBP/n-dodecane (n-DD). With comparable concentrations of the extractants, the distribution ratios obtained with RTILs were much higher than those obtained with n-DD. It was observed that the extraction efficiency was less for Eu(III) than for Am(III). The extraction of Am(III) and Eu(III) decreased with increases in the feed acidity for all three RTILs. The results suggest that the extraction of Am(III) and Eu(III) by CMPO in RTILs from nitric acid proceeds through the cation-exchange mechanism. The distribution ratios of Am(III) and Eu(III) increased with increases in the concentration of CMPO for all three RTILs. A linear regression analysis of the extraction data resulted in a straight line with a slope of about 3, suggesting the involvement of 3 molecules of CMPO during the extraction process.

Cyanex 301 추출제에 의한 Am(III)과 Eu(III)의 상호분리

  • 양한범;임재관;이일희;유재형
    • Proceedings of the Korean Nuclear Society Conference
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    • 1998.05b
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    • pp.533-538
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    • 1998
  • 추출제 Cyanex 301에 대한 NaN $O_3$ 매질에서 Am과 Eu의 추출 및 상호분리 거동에 대해 고찰하였다. Cyanex 301에 대한 Am과 Eu의 추출거동은 매우 유사하여 상호 분리할 수 없었으나 Cyanex 301을 8M NaOH로 비누화 처리하여 NaN $O_3$ 용액 매질에서 Eu에 대한 미량의 Am의 분배계수를 측정한 결과 Am에 대한 선택적 추출성이 높게 나타났다. Cyanex 301의 비누화을, 수용상의 pH 및 Eu 농도가 높아질수록 Am과 Eu의 상호 분리계수인 S $F_{AM}$Eu/는 930까지 증가되었으나 Cyanex 301에 옥탄올을 첨가할 경우에는 S $F_{Am}$ Eu/는 32.3까지 감소하였으며, Am과 Eu의 추출에 미치는 NaN $O_3$ 농도 영향은 없는 것으로 나타났다. Cyanex 301에 추출된 Am과 Eu은 pH가 4인 lM NaN $O_3$ 용액으로는 97.7% 그리고 0.05M DTPA/1.5M Lactic acid에 의해서 99% 이상 역추출되었다.

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Development and Luminescent Characteristics of $CaSiN_2$ Based Phosphors ($CaSiN_2$를 모체로 하는 형광체의 개발 및 발광 특성)

  • Lee, Soon-Seok;Lim, Sung-Kyoo
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.10
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    • pp.31-36
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    • 1999
  • The $CaSiN_2:Eu$ and $CaSiN_2:Tb$ phosphors were synthesized and analyzed to develop new nitride compound phosphors. $Ca_3N_2$, $Si_3N_4$ and $EuF_3$(or $TbF_3$) powders were mixed, cold-pressed, and sintered to synthesize $CaSiN_2:Eu$ and $CaSiN_2:Tb$ phosphors. Photoluminescence(PL) and electroluminescence(EL) characteristics of the synthesized phosphors were measured and found to be similar to general emission spectra of 뗘 and Tb ion, respecticely. Threshold voltage($V_{th)$) and luminance of the $CaSiN_2:Eu$ TFEL device fabricated by sputtering were 90 V and 1.62 $cd/m^2$ at 280 V, respectively. The charge-voltage(Q-V) and transferred charge-phosphor field($Q_t-F_p$) characteristics of the TFEL devices were also measured.

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Spectrofluorimetric Determination of n-Octanol Based on its Ternary Complex with $Eu^{3+}$ and TTA ($Eu^{3+}$, TTA, 그리고 n-Octanol의 삼성분착물에 의한 n-Octanol의 분광형광분석법에 관한 연구)

  • Cha, Ki-Won;Park, Kwang-Won
    • Analytical Science and Technology
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    • v.10 no.6
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    • pp.433-438
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    • 1997
  • The enhancing effect of n-octanol on the fluorescence intensity of the $Eu^{3+}$-thenoyltrifluoroacetone(TTA) system in the presence of Triton X-100 was studied using spectrofluorometric method. This complex exhibited very intense $Eu^{3+}$ ion fluorescence at 619nm, when optically excited at 345nm. Optimum conditions for the determination of n-octanol have also been investigated. The calibration graph was linear over the range $1{\times}10^{-5}M{\sim}1{\times}10^{-7}M$ and the detection limit for n-octanol is $1{\times}10^{-9}M$. The result obtained in the analysis of the synthetic sample agreed with the known value in the error range and the relative standard deviation was ca. 3.5%.

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The Densification and Photoluminescence Characteristics of Ca-α-SiAlON:Eu2+ Plate Phosphor

  • Park, Young-Jo;Lee, Jae-Wook;Kim, Jin-Myung;Golla, Brahma Raju;Yoon, Chang-Bun;Yoon, Chulsoo
    • Journal of the Korean Ceramic Society
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    • v.50 no.4
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    • pp.280-287
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    • 2013
  • Plate-type phosphor is a promising substitute in overcoming the issues related to the powder phosphor paste mixed with resin. In this research, $Ca-{\alpha}-SiAlON:Eu^{2+}$ plate phosphor ($Ca_xSi_{12-(m+n)}Al_{m+n}O_nN_{16-n}:Eu_y$) was investigated for the varied compositions (m,n) of the host crystal with the fixed Eu content (y). Densification was promoted for the compositions with increasing 'm' values for the m=2n relationship. Dictated by the Eu concentration inside the phosphor crystal, photoluminescence intensity was stronger in ${\alpha}2$ specimen (m = 3.0, n = 1.5) containing the second phases when compared to ${\alpha}1$ specimen (m = 1.5, n = 0.75) comprising a single-phase ${\alpha}$-SiAlON. The concentration of Eu in the non-emitting amorphous interfacial glass phase was 2~4 times of the designed Eu concentration inside the ${\alpha}$-SiAlON crystal.

Synthesis and Application of Bluish-Green BaSi2O2N2:Eu2+ Phosphor for White LEDs (백색 LED용 청록색 BaSi2O2N2:Eu2+ 형광체의 합성 및 응용)

  • Jee, Soon-Duk;Choi, Kang-Sik;Choi, Kyoung-Jae;Kim, Chang-Hae
    • Korean Journal of Materials Research
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    • v.21 no.5
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    • pp.250-254
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    • 2011
  • We have synthesized bluish-green, highly-efficient $BaSi_2O_2N_2:Eu^{2+}$ and $(Ba,Sr)Si_2O_2N_2:Eu^{2+}$ phosphors through a conventional solid state reaction method using metal carbonate, $Si_3N_4$, and $Eu_2O_3$ as raw materials. The X-ray diffraction (XRD) pattern of these phosphors revealed that a $BaSi_2O_2N_2$ single phase was obtained. The excitation and emission spectra showed typical broadband excitation and emission resulting from the 5d to 4f transition of $Eu^{2+}$. These phosphors absorb blue light at around 450 nm and emit bluish-green luminescence, with a peak wavelength at around 495 nm. From the results of an experiment involving Eu concentration quenching, the relative PL intensity was reduced dramatically for Eu = 0.033. A small substitution of Sr in place of Ba increased the relative emission intensity of the phosphor. We prepared several white LEDs through a combination of $BaSi_2O_2N_2:Eu^{2+}$, YAG:$Ce^{3+}$, and silicone resin with a blue InGaN-based LED. In the case of only the YAG:$Ce^{3+}$-converted LED, the color rendering index was 73.4 and the efficiency was 127 lm/W. In contrast, in the YAG:$Ce^{3+}$ and $BaSi_2O_2N_2:Eu^{2+}$-converted LED, two distinct emission bands from InGaN (450 nm) and the two phosphors (475-750 nm) are observed, and combine to give a spectrum that appears white to the naked eye. The range of the color rendering index and the efficiency were 79.7-81.2 and 117-128 lm/W, respectively. The increased values of the color rendering index indicate that the two phosphor-converted LEDs have improved bluish-green emission compared to the YAG:Ce-converted LED. As such, the $BaSi_2O_2N_2:Eu^{2+}$ phosphor is applicable to white high-rendered LEDs for solid state lighting.

Luminescence Properties of $Eu^{2+}$-doped $Ca_2Si_5N_8$ Thin Films ($Eu^{2+}$-doped $Ca_2Si_5N_8$ 박막의 광학특성)

  • Jang, Bo-Yun;Pakr, Joo-Seok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.25-27
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    • 2007
  • $Eu^{2+}$-doped $Ca_2Si_5N_8$ was grown on Si(100) substrate using metal-organic deposition (MOD) method and post-annealed at $900^{\circ}C$ in various atmosphere. Luminescence properties of these thin films were investigated with variations of $Eu^{2+}$-doped concentrations and annealing atmosphere. Thin film was formed with clean surface and uniform thickness of about 72 nm. From the measurements of luminescence properties of thin films, film must be post-annealed in nitrogen or mixture of nitrogen and hydrogen atmosphere to emit a sufficient light. For $Ca_{1.5}Eu_{0.5}Si_5N_8$ thin film annealed at $900^{\circ}C$ in nitrogen atmosphere, excitation band from 380 to 420 nm was detected with the maximum intensity at 404 nm and two broad emission bands from 530 to 630 nm were observed. These broad excitation and emission bands must be attributed to the nitrogen incorporations into the films. From the results, $Ca_{2-x}Eu_xSi_5N_8$ thin film has probability for next generation thin film lighting applications such as light emitting diode (LED) or electro-luminescence (EL).

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Luminescent Characteristics of $MgZnSiN_2$ Phosphors Doped with Tb or Eu ($MgZnSiN_2$ 모체에 Tb 또는 Eu이 첨가된 형광체의 발광 특성)

  • Lee, Soon-Seok;Lim, Sung-Kyoo
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.12
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    • pp.31-36
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    • 1999
  • The $Mg._5Zn._5SiN_2:Tb$ and $Mg._5Zn._5SiN_2:Eu$ materials were synthesized and studied to develop new phosphors for thin-film electroluminescent device application. Photoluminescence and cathodoluminescence characteristics of the synthesized phosphors were similar to general emission spectra of Eu, Tb ion, respectively. The CIE color coordinates, threshold voltage and luminance of the $Mg._8Zn._2SiN_2:Eu$ thin-film electroluminescent device fabricated by electron-beam deposition system were x=0.47, y=0.46, 47V, and 23.5 cd/$cm^2$ at 80V, respectively. The capacitance-voltage and charge-voltage characteristics of the thin film electroluminescent devices were also measured.

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