• Journal of Integrative Natural Science
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• v.6 no.3
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• pp.183-186
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• 2013

Well defined 1-dimentional (1-D) photonic crystals of polystyrene replicas have been successfully obtained by removing the porous silicon from the free-standing rugate porous silicon/phenylmethylpolysiloxane composite film. Rugate porous silicon was prepared by an electrochemical etching of silicon wafer in HF/ethanol mixture solution. Exfoliated rugate porous silicon was obtained by an electropolishing condition. A composite of rugate porous silicon/phenylmethylpolysiloxane composite film was prepared by casting a toluene solution of phenylmethylpolysiloxane onto the top of rugate porous silicon film. After the removal of the template by chemical dissolution, the phenylmethylpolysiloxane castings replicate the photonic features and the nanostructure of the master. The photonic phenylmethylpolysiloxane replicas are robust and flexible in ambient condition and exhibit an excellent reflectivity in their reflective spectra. The photonic band gaps of replicas are narrower than that of typical semiconductor quantum dots.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.574-574
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• 2012

We report a simple way of fabricating high-quality carbon nanoscrolls (CNSs) by taking advantage of strain relief due to large difference in strain at the interface of graphene and underlying layer. This method allows strain-controlled self rolling-up of monolayer graphene during etching process at predefined positions on SiO2/Si substrates by photolithography. The size and the length of the CNSs can be easily controlled by adjusting the thickness of the underlying layer and by pre-patterning. Raman spectroscopy studies show that the CNSs is free of significant defects, and the electronic structure and phonon dispersion are slightly different from those of two-dimensional graphene. The preparation of high-quality CNSs may open up new opportunities for both fundamental and applied research of CNSs.

• ETRI Journal
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• v.31 no.6
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• pp.778-783
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• 2009

To fabricate uniform and reliable thin gold stripes that provide low-loss optical waveguides, we developed a novel liftoff process placing an additional $SiN_x$ layer under conventional photoresists. By patterning a photoresist and over-etching the $SiN_x$, the photoresist patterns become free-standing structures on a lower-cladding. This leads to uniform metal stripes with good reproducibility and effectively removes parasitic structures on the edge of the metal stripe in the image reversal photolithography process. By applying the newly developed process to polymer-based gold stripe waveguide fabrication, we improved the propagation losses about two times compared with that incurred by the conventional image-reversal process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.620-627
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• 1998

For chemical microsensors such as humidity and gas sensors, it is essential to obtain a single pore with a large inner surface and straight structure. In this paper, cylindrical macroporous silicon layers have been formed of p-silicon substrate by anodization in HF-ethanol-water solution with an applied current. The pores grew normal to the (100) surface and were uniformly distributed. The pore diameter was approximately $1.5~2{\mu}m$ with a depth of $20~30{\mu}m$ and the pores were not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. Porous silicon diaphragms 18 to $200{\mu}m$ thick were formed by anistropic etching in TMAH solution and then anodization. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer applications for microsensors, micromachining, and separators.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.448-452
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• 2004

The micromachined variable optical attenuator(VOA) was presented in the paper. The VOA has two single mode fiber(SMF) aligned with free space and symmetric parallel plate actuator with microshutter, which can control a amount of light by driving the actuator. In the paper, analysis on driving performances of the VOA was performed and can be reduced threshold voltage through the decreasing displacement actuating range. This paper presents a VOA that is fabricated using bosch deep silicon etching process with silicon on insulator(SOD wafer. The VOA consists of driving electrode, ground electrode, actuating microshutter, and mechanical stopper. In this VOA, actuating shutter is driven by electrostatic force and the threshold voltage is close to 28V, 46V come along with the spring width of 5${\mu}{\textrm}{m}$, 7${\mu}{\textrm}{m}$ respectively. Attenuation range is measured from 2.4㏈ to 16.7㏈.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.357-361
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• 2005

Low-stress silicon nitride (LSN) thin films with embedded metal line have been developed as free standing structures to keep microspheres in proper locations and localized heat source for application to a chip-based sensor array for the simultaneous and near-real-time detection of multiple analytes in solution. The LSN film has been utilized as a structural material as well as a hard mask layer for wet anisotropic etching of silicon. The LSN was deposited by LPCVD (Low Pressure Chemical Vapor Deposition) process by varing the ratio of source gas flows. The residual stress of the LSN film was measured by laser curvature method. The residual stress of the LSN film is 6 times lower than that of the stoichiometric silicon nitride film. The test results showed that not only the LSN film but also the stack of LSN layers with embedded metal line could stand without notable deflection.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.130-137
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• 1995

Deopsition of thermal quality SiO2 using a high density plasma ECR CVD process has been demonstrated to give void and seam free gap fill of high aspect ratio metallization structures with a simple oxygen-silane chemistry. This is achieved by continuous sputter etching of the film during the deposition process. A two-step process is utilized to deposit a composite layer for higher manufacturing efficiency. The first step, which has a deposition rate of approximately 0.5 $\mu$m/min., is used to provide complete gap fill between the metal lines. The second step, which has a deposition rate of up to 1.5 $\mu$m/min., is used to deposit a total thickness of 2.0$\mu$m for the intermetal dielectric film. The topography of this composite film is very compatible with subsequent chemicl mechanical polishing(CMP) planarization processing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.976-979
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• 2002

A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control' writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm), To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and $0.5{\times}0.5mm^2$ area, respectively, This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolpution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.1-6
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• 2000

Recently, SrBi$_{2}$Ta$_{2}$ $O_{9}$(SBT) and Pb(Zr,Ti) $O_{3}$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) with higher read/ write speed, lower power consumption and nonvolartility. SBT thin film has appeared as the most prominent fatigue free and low operation voltage. To highly integrate FRAM, SBT thin film has to be etched. A lot of papers have been reported over growth of SBT thin film and its characteristics. However, there are few reports about etching SBT thin film owing to difficult of etching ferroelectric materials. SBT thin film was etched in CF$_{4}$Ar plasma using magnetically enhanced inductively coupled plasma (MEICP) system. In order to investigate the chemical reaction on the etched surface of SBT thin films, X-ray Photoelecton spectrosocpy (XPS) and Secondary ion mass spectroscopy(SIMS) was performed.

• Korean Journal of Optics and Photonics
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• v.16 no.2
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• pp.113-120
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• 2005

Luminous efficiency and uniformity in a LCD-BLU are mainly determined by fine scattering patterns formed on the light guide panel. We propose a novel fabrication method of 3-dimensional scattered patterns based on anisotropic etching of silicon wafers. Micro-pyramid patterns with 70.5 degree apex-angle and micro-prism patterns with 109.4 degree apex-angle can be self-constructed by the wet, anisotropic etching of (100) and (110) silicon wafers, respectively, and those patterns are easily duplicated by the PDMS replica process. Experimental results on spatial and angular distributions of irradiation from the light guide panel with the micro-pyramid patterns were very consistent with the calculation results. Surface roughness of the silicon-based micro-patterns is free from any artificial defects since the micro-patterns are inherently formed with silicon crystal surfaces. Therefore, we expect that the silicon based micro-patterning process makes it possible to fabricate perfect 3-dimensional micro-structures with crystal surface and apex angles, which may guarantee mass-reproduction of the light guide panels in LCD-BLU.