• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.721-725
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• 1996

The microfabricated test structures were used in order to evaluate the stress characteristics in films. The test structures were fabricated using surface micromachining technique, including HF vapor phase etching as an effective release method. The fabricated structures were micro strain gauge, cantilever-type vernier gauge and bridge for stress measurement, and cantilever for stress gradient measurement. The strain was measures by observing the deformation of the structures occurred after release etching and the amount of deformation can be detected by micro vernier gauge, which has gauge resolution of 0.2${\mu}{\textrm}{m}$. The detection principles and the degree of precision for the measured strain were also discussed. The characteristics of residual stress in LPCVD polysilicon films were studied using these test structures. The stress gradient due to the stress variation through the film thickness was calculated by measuring the deflection at the cantilever free end.

• Journal of the korean academy of Pediatric Dentistry
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• v.35 no.3
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• pp.437-445
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• 2008

The presence of a "prismless" layer on the enamel surface particularly on deciduous teeth has been reported by a number of workers. This structure, which appears to lack the normal prism delineations, could interfere with tag formation and hence, reduce bonding to such surfaces. The purpose of this study was to investigate the relationship of etching times on the effect of acid etching on primary enamel with respect to the quality of etching patterns. Labial surfaces of 32 extracted or exfoliated caries-free primary anterior teeth were used. 35% phosphoric acid gel was used only cervical regions of labial surfaces for each etching time group, 15, 30, 45 and 60 seconds. The surfaces were then washed with water for 20 seconds and dried with air spray for 20 seconds. 1. The Type 3 is 75% when the 15 seconds acid etching time was used. 2. The Type 1 is 38% and Type 2 is 75% when the 30 and 45 seconds acid etching time was used. 3. The Type 1 is 25% and Type 2 is 75% when the 60 seconds acid etching time was used. 4. An etching time of 60 seconds produced a constant and regular etching pattern. 5. There is a significant difference between the groups with respect to the patterns of etch achieved(p<0.05). 6. We confirmed that the acid induced patterns(type 1, 2) became more pronounced when the application time increased(p<0.05). $45{\sim}60$ seconds was the optimal time for etching on the primary enamel.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.135-135
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• 1999

It is well known that Raman spectroscopy is powerful tool in analysis of sp3/sp3 bonding fraction in diamond-like carbon(DLC) films. Raman spectra of DLC film is composed of D-peak centered at 1350cm-1 and G-peak centered at 1530cm-1. The sp3/sp3 fraction is qualitatively acquired by deconvolution method. However, in case of DLC film, it is generally observed that G-peak position shifts toward low wavenumber as th sp3 fraction increases. However, opposite results were frequently observed in ta-C films. ta-C film has much higher residual compressive stress due to its high sp3 fraction compared to the DLC films deposited by CVD method. Effect of residual stress on G-peak position is most recommendable parameter in Raman analysis of ta-C, due to its smallest fitting error among many parameters acquired by peak deconvolution of symmetric spectra. In current study, the effect of residual stress on Raman spectra was quantitatively evaluated by free-hang method. ta-C films of different residual stress were deposited on Si-wafer by modifying DC-bias voltage during deposition. The variation of the G-peak position along the etching depth were observed in the free-hangs of 20~30${\mu}{\textrm}{m}$ etching depth. Mathematical result based on Airy stress function, was compared with experimental results. The more reliable analysis excluding stress-induced shift was possible by elimination of the Raman shift due to residual compressiove stress.

• Journal of Integrative Natural Science
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• v.4 no.1
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• pp.11-14
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• 2011

Free-standing multilayer distributed Bragg reflectors (DBR) porous silicon dielectric mirrors, prepared by electrochemical etching of crystalline silicon using square wave currents are treated with polymethylmethacrylate (PMMA) to produce flexible, stable composite materials in which the porous silicon matrix is covered with caffeine-impregnated PMMA. Optically encoded free-standing DBR PSi dielectric mirrors retain the optical reflectivity. Optical characteristics of free-standing DBR PSi dielectric mirrors are stable and robust for 24 hrs in a pH 12 aqueous buffer solution. The appearance of caffeine and change of DBR peak were simultaneously measured by UV-vis spectrometer and Ocean optics 2000 spectrometer, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.169-169
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• 2011

STT-MRAM (수직자화 자기메모리)는 자화반전 현상을 원리로 구동하는 비휘발성 메모리로 기존의 메모리 장치에 비해 빠른 접근 속도와 높은 저장 밀도를 가지며 영구적인 기록이 가능하다. 이러한 장점들에 더해 적은 소모 전력을 지니므로 기존의 SRAM등의 한계를 극복할 대안으로 각광받고 있으며 차세대 메모리 군의 선두주자로 가장 적합한 후보중 하나이다. STT-MRAM의 건식 식각 방식에 있어 가장 큰 이슈는 소자 구동에 핵심적인 역할을 하는 MTJ(Magnetic Tunnel Junction)의 식각이다. MTJ는 free layer, tunnel barrier, pinned layer 3개의 층으로 구성되어 있으며 양 끝 layer에는 강자성체인 CoFeB가 사용되고 tunnel barrier에는 절연층인 MgO가 사용되고 있다. 이러한 물질들은 기존의 반도체 소자에서는 사용되지 않았던 물질들로 기존 공정에서 사용되던 Cl2 based plasma etching에서는 측벽에 비화발성 반응물과 잔류 Cl2에 의해 부식이 발생하는 문제점이 드러나고 있다. 이러한 문제점을 해결하기 위한 새로운 대안으로 CO/NH3/Ar나 CH4/Ar 같은 새로운 가스 조합을 사용하는 연구가 진행되고 있다. 이러한 연구에 의해 기존의 Cl2 plasma를 이용한 식각에서 나타나는 문제점은 해결이 되었으나 또 다른 문제점들이 보고되고 있다. 본 연구에서는 stack MRAM sample을 사용하여 기존의 사용되는 Cl2/Ar plasma와 대안 gas인 CO/NH3, CH4/Ar plasma에서의 식각을 진행하였으며 실험 조건(gas 비율 변화, Bias power 변화, 식각 시간)에 따른 식각 속도의 변화나 식각 후의 profile에 대하여 관찰하였다. 이에 따라 식각후에 어떠한 차이점이 있는 지를 알아보았으며 CO/NH3나 CH4/Ar plasma에서 식각시 나타나는 문제점에 대하여도 조명해 보았다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.48-48
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• 2011

We have developed a chemically-driven top-down approach using vapor phase HCl to form various GaN nanostructures and successfully demonstrated dislocation-free and strain-relaxed GaN nanostructures without etching damage formed by a selective dissociation method. Our approach overcomes many limitations encountered in previous approaches. There is no need to make a pattern, complicated process, and expensive equipment, but it produces a high-quality nanostructure over a large area at low cost. As far as we know, this is the first time that various types of high-quality GaN nanostructures, such as dot, cone, and rod, could be formed by a chemical method without the use of a mask or pattern, especially on the Ga-polar GaN. It is well known that the Ga-polar GaN is difficult to etch by the common chemical wet etching method because of the chemical stability of GaN. Our chemically driven GaN nanostructures show excellent structure and optical properties. The formed nanostructure had various facets depending on the etching conditions and showed a high crystal quality due to the removal of defects, such as dislocations. These structure properties derived excellent optical performance of the GaN nanostructure. The GaN nanostructure had increased internal and external quantum efficiency due to increased light extraction, reduced strain, and improved crystal quality. The chemically driven GaN nanostructure shows promise in applications such as efficient light-emitting diodes, field emitters, and sensors.

• Restorative Dentistry and Endodontics
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• v.27 no.3
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• pp.257-269
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• 2002

Objective : The purpose of this study was to evaluate the resin infiltration into dentin of one-bottle adhesive systems and self-etching primer bonded to Class V cavities using confocal laser scanning microscope(CLSM). Material and Methods : Forty Class V cavities were prepared from freshly extracted caries-free Human teeth. These teeth were divided into two groups based on the presence of cervical abrasion: Group I, cervical abrasion : Group II, wedge-shaped cavity preparation. Resin-dentin interfaces were produced with two one-bottle dentin bonding systems-ONE COAT BOND(OCB; Coltene$^R$) and Syntac$^R$SPrint$^{TM}$(SS; VIVADENT)-, one self-etching priming system-CLEARFIL$^{TM}$ SE BOND (SB : KURARAY)- and one multi-step dentin bonding system-Scotchbond$^{TM}$Multi-Purpose (SBMP, 3M Dental Products)-as control according to manufacturers' instructions. Cavities were restored with Spectrum$^{R}$(Dentsply). Specimens were immersed in saline for 24 hours and sectioned longitudinally with a low-speed diamond disc. The resin-dentin interfaces were microscopically observed using CLSM. The quality of resin-infiltrated dentin layers were evaluated by five dentists using 0~4 scale. Results : Confocal laser scanning microscopal investigations using primer labeled with rhodamine B showed that the penetration of the primer occurred along the cavity margins. Statistical analysis using one-way ANOVA followed by Duncan's Multiple Range test revealed that the primer penetration of the group 2(wedge-shaped cavity preparation) was more effective than group 1(cervical abrasion) and that of the gingival interfaces was more effective than the occlusal interfaces. In the one-bottle dentin bonding systems, the resin penetration score of OCB was compatible to SBMP, but those of SS and self-etching priming system, SB were lower than SBMP.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.1-8
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• 2022

High-density packaging technologies, including Through-Si-Via (TSV) technologies, are considered important in many fields such as IoT (internet of things), 6G/5G (generation) communication, and high-performance computing (HPC). Achieving high integration in two dimensional packaging has confronted with physical limitations, and hence various studies have been performed for the three-dimensional (3D) packaging technologies. In this review, we described about the causes and effects of scallop formation in TSV, the scallop-free etching technique for creating smooth sidewalls, Cu pillar and Cu-SiO₂ hybrid bonding in TSV. These technologies are expected to have effects on the formation of high-quality TSVs and the development of 3D packaging technologies.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.284-288
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• 2014

We present tapered nanostructures fabricated on a selective area of gallium phosphide substrates for advanced optoelectronic device applications. A lithography-free fabrication process was accomplished by dry etching of metal nanoparticles. Thermal dewetting of micro-patterned metal thin films provides etch masks for tapered nanostructures. This simple process also allows the formation of plasmonic surfaces with corrugated shapes. Rigorous coupled-wave analysis calculations provide design guidelines for tapered nanostructures on gallium phosphide substrates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.958-962
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• 2002

This paper reports on the fabrication of free-standing microstructures by DRIE (deep reactive ion etching). SOI (Si-on-insulator) structures with buried cavities are fabricated by SDB (Si-wafer direct bonding) technology and electrochemical etch-stop. The cavity was formed the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the formed cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing (100$0^{\circ}C$, 60 min.), the SDB SOI structure with a accurate thickness and a good roughness was thinned by electrochemical etch-stop in TMAH solution. Finally, it was fabricated free-standing microstructures by DRIE. This result indicates that the fabrication technology of free-standing microstructures by combination SDB, electrochemical etch-stop and DRIE provides a powerful and versatile alternative process for high-performance bulk micromachining in MEMS fields.