• Journal of information and communication convergence engineering
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• v.4 no.2
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• pp.84-87
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• 2006

Lateral distributions of locally injected electrons and holes in an oxide-nitride-oxide (ONO) dielectric stack of two different silicon-oxide-nitride-oxide-silicon (SONOS) memory cells are evaluated by single-junction charge pumping technique. Spatial distribution of electrons injected by channel hot electron (CHE) for programming is limited to length of the ONO region in a locally ONO stacked cell, while is spread widely along with channel in a fully ONO stacked cell. Hot-holes generated by band-to-band tunneling for erasing are trapped into the oxide as well as the ONO stack in the locally ONO stacked cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.238.1-238.1
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• 2014

이번 연구는 system-on-panel에 적용하기 위한 비휘발성 메모리의 메모리 윈도우 특성 향상에 관한 연구이다. 이를 위해 SiO2/SiNX/SiOXNY의 메모리 구조를 이용하였으며, 채널층으로 투명한 비정질 인듐-주석-아연-산화물을 이용하였다. N형 물질의 특성인 수많은 전자로 인해 erasing의 어려움이 발생하는데 이는 빛과 전압의 동시 인가로 해결하였다. 전하트랩층은 비휘발성 메모리에서 가장 널리 이용되는 질화막을 이용하였으며, SiH4과 NH3의 비율은 8대 1에서 1대 2까지 이용하였다. 이번 연구에서 SiH4과 NH3의 비율이 2대 1일 때 쓰기 전압 +13V와 지우기 전압 -6V에서 약 3.7V의 높은 메모리 윈도우를 얻을 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.57-60
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• 2002

This paper deals with the effect of ramp-type erase pulse waveform on the high temperature driving characteristics of ac PDP driven by ramp up-down reset waveform. The experimental results show that the discharge characteristics in the reset period are significantly affected by the erase pulse waveform and ambient temperature. The firing voltage is increased with ambient temperature. This can cause misfirings during the sustain period and should be avoided. As one of possible solutions, we propose the optimization of erasing pulse shape.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.3
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• pp.261-266
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• 1992

In this paper, we investigated the stability of TeS1100-xTGeS1xT( x = 15,33,50 at. %) thin films by observing the transmittance and reflectance changes with annealing and exposure of diode laser(780nm). As results of transmittance changes in constant tenperature and humidity atmosphere, it was shown that TeS150TGeS150T thin film has the smallest transmittance change. From the XRD patterns, it was confirmed that the transmittance changes in TeS150TGeS150T thin film before and after annealing are due to crystalization. The transmittance changes in TeS150TGeS150T thin film with annealing are largest at diode laser wavelength and the trasmittance changes with laser exposure are decreased fast.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1874-1877
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• 2002

The ramp waveform has recently been introduced to erase wall charges for AC PDP. However, it is difficult to erase completely the wall charges in all cases In this paper, new erase waveform having adaptive erasing characteristics are investigated. The erase margin of suggested waveform is wider than that of the conventional waveform. Moreover, suggested waveform can reduce the erase time significantly.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.136-136
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• 2011

반도체 및 전자기기 산업에 있어서 NVM은 아주 중요한 부분을 차지하고 있다. NVM은 디스플레이 분야에 많은 기여를 하고 있는데, 측히 AMOLED에 적용이 가능하여 온도에 따라 변하는 구동 전류, 휘도, color balance에 따른 문제를 해결하는데 큰 역할을 한다. 본 연구에서는 bottom gate 구조의 nc-Si NVM 실험을 진행하였다. P-type silicon substrate (0.01~0.02 ${\Omega}-cm$) 위에 Blocking layer 층인 SiO2 (SiH4:N2O=6:30)를 12.5nm증착하였고, Charge trap layer 층인 SiNx (SiH4:NH3=6:4)를 20 nm 증착하였다. 마지막으로 Tunneling layer 층인 SiOxNy은 N2O (2.5 sccm) 플라즈마 처리를 통해 2.5 nm 증착하였다. 이러한 ONO 구조층 위에 nc-Si을 50 nm 증착후에 Source와 Drain 층을 Al 120 nm로 evaporator 이용하여 증착하였다. 제작한 샘플을 전기적 특성인 Threshold voltage, Subthreshold swing, Field effect mobility, ON/OFF current ratio, Programming & Erasing 특성, Charge retention 특성 등을 알아보았다.

• Communications of the Korean Institute of Information Scientists and Engineers
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• v.5 no.2
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• pp.105-107
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• 1987

A storage tube, Tektronix 4010, was added to NOVA 840 system at Korea Advanced Institute of Science in 1974 and efforts were made to develop an interactive graphics system. These include a software library, called TCS(Terminal Control System) [4], algorithms for hidden line and surface eliminations [5. 6], and two single user graphics systems based on different concepts involving graphic languages [2, 11]. A storage tube is a low-cost terminal, which is useful in certain applications, but introduces some problems since partial modification of the screen is not possible without erasing it entirely. Thus it has far reaching effects on the design of an interactive graphics system. The components of an interactive graphics system will be explained in section 2 and their relation ships with the choice of storage tube as the output device will be pointed out.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.121-122
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• 2000

The understanding of reset scheme is essential for the driving of AC PDP (Plasma Display Panel). The characteristics of reset period of AC PDP was examined with the variation of pulse time and voltage in the ADS (Address Display Separated) driving method presented by Fujitsu,. The addressing characteristics showed drastic change as a function of the erasing time and addressing pulse width. In this paper, these results were explained by the change of wall charge variation, and it was estimated with the currents through each electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.113-117
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• 2007

We have investigated the effects of doping concentration in polysilicon floating gate on the endurance characteristics of the EEPROM cell haying the structure of spacer select transistor. Several samples were prepared with different implantation conditions of phosphorus for the floating gate. Results show the dependence of doping concentration in polysilicon floating gate on performance of EEPROM cell from the floating gate engineering point of view. All of the samples were endured up to half million programming/erasing cycle. However, the best $program-{\Delta}V_{T}$ characteristic was obtained in the cell doped at the dose of $1{\times}10^{15}/cm^{2}$.

• Journal of the Optical Society of Korea
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• v.1 no.1
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• pp.19-22
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• 1997

The photorefractive properties of 4% mol magnesium oxide doped lithium niobate have been investigated at room temperature. The recording and erasing time constants were measured as a function of intensity and analyzed by using the two active species (electron-hole) model. The results were used to compute the exposure schedule for multiple hologram recording. We have recorded grating of five holograms by angular multiplexing at room temperature and fixed them by means of a thermal cycling procedure. The highest diffraction efficiency of a fixed grating is up to 50% of an unfixed one.