• Current Optics and Photonics
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• v.3 no.5
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• pp.445-450
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• 2019

The influence of high-power laser diode (HPLD) emitter width on the device performance is investigated for 975-nm (In,Ga)(As,P)/(Al,Ga)As broad-area HPLDs, using self-consistent electro-thermal-optical simulation. To guarantee the simulation's accuracy, simulated results are matched with the measured results for a sample HPLD with fitting parameters. The influences of HPLD emitter width on temperature distribution, output power, and the beam product parameter (BPP) are analyzed for three different emitter widths of 50, 70, and $90{\mu}m$. It is found that a device with smaller emitter width exhibits both thermal rollover and thermal blooming at lower output power, but smaller BPP.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.355-358
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• 2009

This paper presents the technology of selective emitter for high efficiency crystalline silicon solar cell. The effect of selective emitter is analyzed by using the simulation program for solar cell, PC1D. The selective emitter shows better spectral response in short wavelength regions compared to homogeneous emitter. Therefore, the efficiency of solar cell with selective emitter can be improved by changing the sheet resistance from 60 $\Omega/\square$ to 120 $\Omega/\square$. In addition, the power loss of solar cell can be minimized by optimizing width and gap of the finger electrodes on the selective emitter.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.523-526
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• 2000

A dual gate trench emitter IGBT structure is proposed and studied numerically using the device simulator MEDICI. The on-state forward voltage drop latch-up current density turn-off time and breakdown voltage of the proposed structure are compared with those of the conventional DMOS-IGBT and trench gate IGBT structures. The proposed structure forms an additional channel and increases collector current level resulting in reduction of on -state forward voltage drop. In addition the trench emitter increases latch-up current density by 148% in comparison with that for the conventional DMOS-IGBT and by 83% compared with that for the trench gate IGBT without degradation in breakdown voltage when the half trench gate width(Tgw) and trench emitter depth(Ted) are fixed at $1.5\mum\; and\; 2\mum$, respectively

• Current Optics and Photonics
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• v.6 no.2
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• pp.191-195
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• 2022

We investigate the lateral far-field pattern characteristics, including divergence angle change and far-field pattern analysis as output power increases, of narrow-emitter-width 850 nm GaAs/AlGaAs laser diodes (LDs). Each LD has a cavity of 1200 and 1500 ㎛ and narrow emitter width of 2.4 ㎛ for the top and 4.6 ㎛ for the bottom. The threshold currents are 35 and 40 mA, and L-I kinks appear at power levels of 326 and 403 mW, respectively. The divergence angle tends to increase due to the occurrence of first-order lateral mode and the thermal lensing effect. But with the L-I kink, the divergence angle decreases and the far-field pattern becomes asymmetric. This is due to coherent superposition between the fundamental and the first-order lateral mode. We provide detailed explanations for these observations based on high-power laser diode simulation results.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.151-154
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• 2008

The field emission lamps have the advantages to their cold cathode-characteristic and the eco-friendly, We realized that the dual emitter system showed very simple structure which gate and cathode electrodes are formed on the same glass surface. In this paper, we reported the properties of dual emitters depended on variation of gate width and spacing for optimum panel structure. In combination of dual emitter structure and bi-polar driving, electron beam spreads more than normal gate structure or diode structure, and emission uniformity increased in dual emitter structure at 5"-diagonal.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.57-65
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• 1995

The effects of device geometry and layout on high speed performance such as current gain outoff frequency(f$_{T}$) and maximum oscillation frequency(f$_{max}$) are of very improtant for the scaling-down of geterojunction bipolar transistors(HBT$_{s}$). In this paper AlGaAs/GaAs HBTs are fabricated by MBE epitaxial growth and conventional mesa process, and the experimental data of emitter-base geometru dependency of HBT performance are presented in order to provide the quantitative information for optimum device structure design. It is shown that f$_{T}$ and f$_{max}$ are inversely proportional to the emiter stripe width, while the low emitter perimeter/area ratio is better to f$_{T}$ and worse ot f$_{max}$. It is also demonstrated the f$_{T}$ and f$_{max}$ are highly improved by the emitter-base spacing reduction resulting in less parsitic effects. As the result f$_{T}$ of 42GHz and f$_{max}$ of 23GHz are obtained for fabricated HBT with emitter area of 3${\times}20^{\mu}m^{2}$ and E-B spacing of 0.2$\mu$m.m.m.

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.65-69
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• 2017

This paper presents a Technology-CAD (TCAD) simulation of the characteristics of crystalline Si pillar array solar cells. The junction depth and the surface concentration of the solar cells were optimized to obtain the targeted sheet resistance of the emitter region. The diffusion model was determined by calibrating the emitter doping profile of the microscale silicon pillars. The dimension parameters determining the pillar shape, such as width, height, and spacing were varied within a simulation window from ${\sim}2{\mu}m$ to $5{\mu}m$. The simulation showed that increasing pillar width (or diameter) and spacing resulted in the decrease of current density due to surface area loss, light trapping loss, and high reflectance. Although increasing pillar height might improve the chances of light trapping, the recombination loss due to the increase in the carrier's transfer length canceled out the positive effect to the photo-generation component of the current. The silicon pillars were experimentally formed by photoresist patterning and electroless etching. The laboratory results of a fabricated Si pillar solar cell showed the efficiency and the fill factor to be close to the simulation results.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.8-15
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• 2007

In this paper, we fabricated the field emitter display using oxidized porous polysilicon(OPPS). Their field emission characteristics and the brightness were investigated for each pixel. The OPPS emitter was operated to each pixel using passive matrix for application of large panel display. We set up the proper thickness and width of upper electrode. The fine structure of OPPS was analyzed and the field emission characteristics of each pixel were investigated. As a result of field emission characteristics of different upper electrode thickness and width, we confirmed that the most efficient thickness was 2nm/7nm and increased the emission efficiency over the width of 2.5 mm. Even if field emission characteristics of each pixel was a little different but we confirmed the same leakage current and emission current, emission efficiency at each pixel. The leakage current and emission current was decreased according to the time increases but all of each pixel were uniformly decreased. We confirmed that the brightness of each pixel was not different and the brightness of OPPS field emitter was 700 cd/m2 at the Vps=20 V. Accordingly, the patterned OPPS field emitter can be applied to high quality field emission display devices.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.1
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• pp.51-58
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• 1990

NPN Si bipolar transistors with two different emitter widths are designed and fabricated. The effects of the emitter width on the small signal parameters of BJTs are measured and discussed. A new ac method for determining the current gain, the cut off frequency and the internal capacitances from the input impedance circle characteristics as a function of the varied external series resistances is presented. This method allows an accurate characterization of bipolar transistors with high current gain. The variation of the I-V curves of the emitter junction with the reverse collector junction voltages is discussed from the changes in the intsrinsic base resistances.

• Journal of IKEEE
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• v.25 no.2
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• pp.350-355
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• 2021

IGBT is a power semiconductor device that contains both MOSFET and BJT structures, and it has fast switching speed of MOSFET, high breakdown voltage and high current of BJT characteristics. IGBT is a device that targets the requirements of an ideal power semiconductor device with high breakdown voltage, low V_CE-SAT, fast switching speed and high reliability. In this paper, we analyzed Gate oxide thickness, Trench Gate Width, and P+Emitter width, which are the top process parameters of 1,200V Trench Gate Field Stop IGBT, and suggested the optimized top process parameters. Using the Synopsys T-CAD Simulator, we designed IGBT devices with electrical characteristics that has breakdown voltage of 1,470 V, V_CE-SAT 2.17 V, Eon 0.361 mJ and Eoff 1.152 mJ.