Characterization and Determination of Small Signal Parameters of Bipolar Transistors

바이폴라 트랜지스터 소신호 변수의 결정 및 특성에 관한 연구

NPN Si bipolar transistors with two different emitter widths are designed and fabricated. The effects of the emitter width on the small signal parameters of BJTs are measured and discussed. A new ac method for determining the current gain, the cut off frequency and the internal capacitances from the input impedance circle characteristics as a function of the varied external series resistances is presented. This method allows an accurate characterization of bipolar transistors with high current gain. The variation of the I-V curves of the emitter junction with the reverse collector junction voltages is discussed from the changes in the intsrinsic base resistances.