• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.453-459
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• 2013

In phtosynthetic light harvesting complexes, the electronic transition energies of chlorophylls are influenced by the Coulombic interaction with nearby molecules. Variation of the interactions caused by structural inhomogeneity in biological environment results in a distribution of disordered electronic transition energies of chlorophylls. In order to provide a practical guide to predict qualitative tendency of such distribution, we model four porphyrin derivatives including chlorophyll a molecule interacting with an external positive charge and calculate their transition energies using the time dependent density functional method. It is found that ${\pi}-{\pi}^*$ transition energies of the molecules are generally blue-shifted by the charge because this stabilizes occupied molecular orbitals to a greater extent than unoccupied ones. Furthermore, new transitions in the visible region emerge as a result of the red-shift in energy of an unoccupied Mg orbital and it is suggested that light-induced electron transfer may occur from the tetrapyrrole ring to the central magnesium when the molecules are interacting with a positive charge.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.340-343
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser hem: hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. This letters researched into the characteristic of phase change transition in differential Chalcogenide thin films materials. The electrode used Al and experimented on 100nm, 300nm, 500nm respectively.

• Proceedings of the IEEK Conference
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• 2000.07a
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• pp.355-358
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• 2000

In this paper we propose procedures to enhance testability by modifying state transition tables. In these procedures, transitions about undefined states, which are not described in state transition tables but exist in a synthesized gate level circuit, are added to a state transition table. Experimental results for MCNC benchmarks are shown.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.241-243
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can be controlled by electrical or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. In this letter, the characteristics of phase transition in differential chalcogenide thin film are investigated. Al was used for the electrode as the thickness of 100, 300, 500 nm, respectively.

• Bulletin of the Korean Chemical Society
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• v.20 no.11
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• pp.1281-1287
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• 1999

The low-lying electronic states of diazirine and 3,3'-dimethyldiazirine have been studied by high level ab initio quantum chemical methods. The equilibrium geometries of the ground state and the first excited singlet and triplet states have been optimized using the Hartree-Fock (HF) and complete active space SCF (CASSCF) methods, as well as using the Møller-Plesset second order perturbation (MP2) theory and the single configuration interaction (CIS) theory. It was found that the first excited singlet state is of 1 B1 symmetry resulting from the n- π* transition, while the first excited triplet state is of 3 B2 symmetry resulting from the π- π* transition. The harmonic vibrational frequencies have been calculated at the optimized geometry of each electronic state, and the scaled frequencies have been compared with the experimental frequencies available. The adiabatic and vertical transition energies from the ground electronic state to the low-lying electronic states have been estimated by means of multireference methods based on the CASSCF wavefunctions, i.e., the multiconfigurational quasidegenerate second order perturbation (MCQDPT2) theory and the CASSCF second-order configuration interaction (CASSCF-SOCI) theory. The vertical transition energies have also been calculated by the CIS method for comparison. The computed transition energies, particularly by MCQDPT2, agree well with the experimental observations, and the electronic structures of the molecules have been discussed, particularly in light of the controversy over the existence of the so-called second electronic state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.486-489
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• 2002

Temperature(T) dependence of the sheet resistance( $R_{$\square$}$) has been investigated on the c-axis oriented thin films of the (Bi2212/Bi2201) mixed crystal with different molar fractions. The $R_{$\square$}$-T superconducting characteristic deteriorated with reduction of the Bi2212 fraction, and almost disappears at 48 mol% where a superconductor-to-insulator transition took place, with the resistance on the normal state, RN, reaching 4.l㏀ at 80 K. This $R_{N}$ value is close to the universal quantum number, h/(2e)$^2$≡6.5㏀ predicted by the Kosterlitz-Thouless(KT) transition theory. The $R_{$\square$}$-T characteristics of the 48 mol% thin film can be elucidated as a competitive process of KT transition brought about by charge or vortex in the two-dimensional layer structure.e.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.4
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• pp.356-366
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• 2022

This paper presents a mode transition method that applies frequency compensation technique of an LLC resonant converter for stable mode transition. LLC resonant converters used in various applications require high efficiency and high power density. However, because of circuit property, a wider voltage gain range equates to a greater circuit loss, so maintaining high efficiency at all voltage gain ranges is difficult. In this case, full bridge-half bridge mode transition method can be used, which maintains high efficiency even in a wide voltage gain range. However, this method causes damage to the circuit through overcurrent by the mode transition. This study analyzes the cause of the problem and proposes a mode transition method that applies frequency compensation technique to solve the problem. The proposed method verifies the stable transition through simulation analysis and experimental results.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.20-23
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• 2002

Temperature (T) dependence of the sheet resistance (R$\_$$\square$/) has been investigated an the c-axis oriented thin films of the (Bi2212/Bi2201) mixed crystal with different molar fractions. The R$\_$$\square$/-T superconducting characteristic deteriorated with reduction of the Bi2212 fraction, and almost disappears at 48 mol% where a superconductor-to-insulator transition too k place, with the resistance on the normal state, R$\_$N/, reaching 4.1 kΩka at 80 K. This R$\_$$\square$/ value is close to the universal quantum number, h/(2e)$_2$≡ 6.5 kΩ predicted by the Kosterlitz-Thouless (KT) transition theory. The R$\_$$\square$/-T characteristics of the 48 mol% thin film can be elucidated as a competitive process of KT transition brought about by charge or vortex in the two-dimensional layer structure.

• Journal of electromagnetic engineering and science
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• v.13 no.2
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• pp.120-126
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• 2013

This paper introduces a new design for a Rotman lens that has been proposed to minimize its size and provide a suitable design for a compact beamforming system. The size reduction is realized by minimizing the length of the transition structures, which are positioned between the lens body and the connecting lines. The proposed structure is much shorter than a conventional transition structure, which is a tapered line in general. As a result, a 45% size reduction can be achieved by using the proposed transition structure, compared to a typical Rotman lens with linearly tapered lines. Therefore, the proposed Rotman lens will be suitable for compact beamforming systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.268-271
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• 2004

The phase transition from amorphous to crystalline states, and vice versa, of $Ge_2Sb_2Te_5$ films by applying electrical pulses have been studied. This material can be used as nonvolatile memory. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.