• Title/Summary/Keyword: Electronic states

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Ferromagnetism of Chalcopyrite AlGaAs2:Mn Quaternary Alloys (4원 합금 AlGaAs2:Mn의 강자성)

  • Kang, Byung-Sub
    • Korean Journal of Materials Research
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    • v.30 no.12
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    • pp.666-671
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    • 2020
  • The electronic structure and magnetic properties of chalcopyrite (CH) AlGaAs2 with dopant Mn at 3.125 and 6.25 % concentrations are investigated using first-principles calculations. The CH AlGaAs2 alloy is a p-type semiconductor with a small band-gap. The AlGaAs2:Mn shows that the ferromagnetic (FM) state is the most energetically favorable one. The Mn-doped AlGaAs2 exhibits FM and strong half-metallic ground states.The spin polarized Al(Ga,Mn)As2 state (Al-rich system) is more stable than the (Al,Mn)GaAs2 state (Ga-rich system), which has a magnetic moment of 3.82mB/Mn. The interaction between Mn-3d and As-4p states at the Fermi level dominates the other states.The states at the Fermi level are mainlyAs-4p electrons, which mediate strong interaction between the Mn-3d and As-4p states. It is noticeable that the FM ordering of dopant Mn with high magnetic moment originates from the As(4p)-Mn(3d)-As(4p) hybridization, which is attributed to the partially unfilled As-4pbands. The high FM moment of Mn is due to the double-exchange mechanism mediated by valence-band holes.

Improvement of carrier mobility on Silicon-Germanium on Insulator MOSFEI devices with a Si-strained layer (Si-strained layer를 가지는 Silicon-Germanium on Insulator MOSFET에서의 이동도 개선 효과)

  • Cho, Won-Ju;Koo, Hyun-Mo;Lee, Woo-Hyun;Koo, Sang-Mo;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.7-8
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    • 2006
  • The effects of heat treatment on the electrical properties of SGOI were examined. We proposed the optimized heat treatments for improving the interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA(rapid thermal annealing) before gate oxidation and post-RTA after dopant activation, the driving current, the transconductance, and the leakage current were improved significantly.

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The Main Character and Evaluation of China's New Electronic Signature Legislation (중국 전자서명법의 주요내용 및 평가와 전망)

  • Han, Sang-Hyun
    • The Journal of Information Technology
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    • v.9 no.3
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    • pp.1-14
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    • 2006
  • China has recently (28 August 2004) adopted a new act legalizing the electronic signature. This new act provides electronic signatures with the same legal status as handwritten signatures, and states that on-line certification providers will have to be created in order to ensure the security of on-line operations made using said signatures. This new act is intended to increase Chinese electronic business, and thus to raise the revenue China can expect from said business. And the law grants electronic signatures the same legal effect as handwritten signatures and seals in business transactions, and sets up the market access system for online certification providers to ensure the security of e-commerce. As Internet trade requires a reliable third party to identify the signers, the credibility of online certifying organizations is significant for the transaction security. So, considering the weakness of China's social credibility system, the law regulates that the online signatures certification providers should be approved and administered by governments.

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Improvement of Carrier Mobility on Silicon-Germanium on Insulator MOSFET Devices with a Strained-Si Layer

  • Cho, Won-Ju;Koo, Hyun-Mo;Lee, Woo-Hyun;Koo, Sang-Mo;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.5
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    • pp.399-402
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    • 2007
  • The effects of heat treatment on the electrical properties of strained-Si/SiGe-on-insulator (SGOI) devices were examined. We proposed the optimized heat treatment processes for improving the back interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA (rapid thermal annealing) before gate oxidation step and the post-RTA after source/drain dopant activation step, the electrical properties of strained-Si channel on $Si_{1-x}Ge_x$ layer were greatly improved, which resulting the improvement of the driving current, transconductance, and leakage current of SGOI-MOSFET.

A Study on the Legal Aspects of E-Commerce in China (판례를 통해 본 중국의 전자상거래와 관련한 몇 가지 문제에 관한 연구)

  • Lee, Shie-Hwan
    • THE INTERNATIONAL COMMERCE & LAW REVIEW
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    • v.47
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    • pp.213-237
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    • 2010
  • The purpose of this paper is to analysis the legal aspects of e-commerce, particularly those relate to electronic contract, in China On 23 November 2005, the United Nations General Assembly adopted a Convention on the Use of Electronic Communications in International Contracts, known popularly as the Electronic Communications Convention. China signed it but the convention is not binding yet as it still requires the ratification by three states. On the other hand, China adopted a new act legalizing the electronic signature in 2004. This new act provides electronic signatures with the same legal status as handwritten signatures. But the efficiencies that business hopes to achieve through electronic commerce are not completely reflected in the legal processes necessary to support those hopes.

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$H_\infty$ Controller Design for Discrete-time Linear Systems with Time-varying Delays in States using S-procedure (S-procedure를 이용한 상태에 시변 시간지연을 가지는 이산 선형 시스템에 대한 $H_\infty$ 제어기 설계)

  • Kim, Ki-Tae;Cho, Sang-Hyun;Park, Hong-Bae
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.39 no.2
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    • pp.95-103
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    • 2002
  • This paper deals with the H$_{\infty}$ control problems for discrete-time linear systems with time-varying delays in states. The existence condition and the design method of the H$_{\infty}$ state feedback controller are given. In this paper, the H$_{\infty}$ control law is assumed to be a memoryless state feedback, and the upper-bound of time-varying delay and S-procedure are used. Through some changes of variables and Schur complement, the obtained sufficient condition can be rewritten as an LMI(linear matrix inequality) form in terms of all variables.

Design of ultra short vertical directional couplers with high extinction ratios composed of two sections (매우 짧은 길이와 높은 소멸비를 가지는 두 개의 영역으로 구성된 수직 방향성 결합기의 설계)

  • Cho, Sung-Chan;Seol, Jong-Chol;Kim, Boo-Gyoun
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.9
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    • pp.64-70
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    • 1999
  • We show that both cross and bar states with very high extinction ratios larger than 30 dB can be obtained in ultra short (< $100{\mu}m$) two-section vertical directional couplers. Based on the calculations of various possible combinations of the refractive indices of waveguides in each section using the improved coupled mode theory and beam propagation method, the guidelines for the design of ultra short two-section vertical directional couplers are presented to obtain both cross and bar states with high extinction ratios larger than 30 dB at the ends of section 1 and section 2, respectively.

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Parameter Estimation of 2-DOF System Based on Unscented Kalman Filter (UKF 기반 2-자유도 진자 시스템의 파라미터 추정)

  • Seung, Ji-Hoon;Kim, Tae-Yeong;Atiya, Amir;Parlos, Alexander;Chong, Kil-To
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.10
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    • pp.1128-1136
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    • 2012
  • In this paper, the states and parameters in a dynamic system are estimated by applying an Unscented Kalman Filter (UKF). The UKF is widely used in various fields such as sensor fusion, trajectory estimation, and learning of Neural Network weights. These estimations are necessary and important in determining the stability of a mobile system, monitoring, and predictions. However, conventional approaches are difficult to estimate based on the experimental data, due to properties of non-linearity and measurement noises. Therefore, in this paper, UKF is applied in estimating the states and parameters needed. An experimental dynamic system has been set up for obtaining data and the experimental data is collected for parameter estimation. The measurement noises are primarily reduced by applying the Low Pass Filter (LPF). Given the simulation results, the estimated error rate is 39 percent more efficient than the results obtained using the Least Square Method (LSM). Secondly, the estimated parameters have an average convergence period of four seconds.

Electronic Information Resources (EIR) Adoption in Private University Libraries: The Moderating Effect of Productivity and Relative Advantage on Perceived Usefulness

  • Izuagbe, Roland;Hamzat, Saheed Abiola;Joseph, Edith Idowu
    • Journal of Information Science Theory and Practice
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    • v.4 no.1
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    • pp.30-48
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    • 2016
  • The study tested a hybrid model with constructs drawn from the Technology Acceptance Model (TAM) and Diffusion of Innovation (DOI) theory in order to examine the moderating effect of productivity and relative advantage (RA) on perceived usefulness (PU) vis-à-vis electronic information resources (EIR) adoption in private university libraries in Ogun and Osun States of Nigeria. The descriptive research design was adopted in the study. The population consisted of 61 (55.0%) librarians and 50 (45.0%) library officers (totaling 116—100%) in Babcock University, Bells University, Covenant University, Bowen University, Oduduwa University, and Redeemer's University. Purposive sampling procedure was adopted after which total enumeration was used since the total population is small. The questionnaire was used for data collection. Of the 116 copies of the questionnaire administered, 111 (95.7%) were found usable. The instrument was structured based on a 4-point Likert agreement scale of Strongly Agree, Agree, Disagree, and Strongly Disagree. Data were analyzed using descriptive statistics like tables of frequency counts and percentage. The findings revealed that productivity and relative advantage are significant moderators of perceived usefulness of EIR adoption in private university libraries in Ogun and Osun States, Nigeria.

Impedance Characterization of Tantalum Oxide Deposited through Pulsed-Laser Deposition

  • Kwon, Kyeong-Woo;Jung, Jin-Kwan;Park, Chan-Rok;Kim, Jin-Sang;Baek, Seung-Hyub;Hwang, Jin-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.207.1-207.1
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    • 2013
  • Tantalum oxide has been extensively investigated as one of the promising Resistive switching materials applicable to Resistive Dynamic Access Memories. Impedance spectroscopy offers simultaneous measurements of electrical and dielectric information, separation of electrical origins among bulk, grain boundaries, and interfaces, and the monitoring of electrical components. Such benefits have been combined with the resistive states of resistive switching devices which can be described in terms of equivalent circuits involving resistors, capacitors, and inductors, The current work employed pulsed laser deposition in order to prepare the oxygen-deficient tantalum oxide. The fabricated devices were controlled between highresistance and low-resistance states in controlled current compliance modes. The corresponding electrical phenomena were monitored both in the dc-based current-voltage characteristics and in the ac-based impedance spectroscopy. The origins of the electrical switching are discussed towards optimized ReRAM devices in terms of interfacial effects.

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