• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.4
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• pp.406-412
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• 2019

In this paper, we propose two algorithms for classifying services with similar delay characteristics into three classes and allocating radio resources according to priority in LTE-A system where H2H and M2M services coexist. The first is to allocate resources from the higher priority class to the lower priority class, and each class gives priority to H2H over M2M, and the other is to give priority to H2H regardless of delay characteristics except for the class with the highest priority. The RA success probability was analyzed according to the access rate(${\alpha}$) of M2M devices in each class. In comparison with the conventional systems, it was improved from 0.5 to 0.52 for ${\alpha}_{2M}=0.05$ in two classes. In the three classes, the success probability was slightly increased from 0.5 to 0.57 for ${\alpha}_{2M}={\alpha}_{3M}=1$ and from 0.5 to 0.58 for ${\alpha}_{2M}=0.5$ and ${\alpha}_{3M}=0.1$. Although 6 services are considered in the proposed scheme, the RA success probability is almost similar to the previous scheme because the average arrival rate of H2H of each class is set to the same.

• Journal of IKEEE
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• v.27 no.3
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• pp.345-349
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• 2023

In this paper, we propose a study on the development of deep learning structure for defective pixel detection of next-generation smart LED display board using imaging device. In this research, a technique utilizing imaging devices and deep learning is introduced to automatically detect defects in outdoor LED billboards. Through this approach, the effective management of LED billboards and the resolution of various errors and issues are aimed. The research process consists of three stages. Firstly, the planarized image data of the billboard is processed through calibration to completely remove the background and undergo necessary preprocessing to generate a training dataset. Secondly, the generated dataset is employed to train an object recognition network. This network is composed of a Backbone and a Head. The Backbone employs CSP-Darknet to extract feature maps, while the Head utilizes extracted feature maps as the basis for object detection. Throughout this process, the network is adjusted to align the Confidence score and Intersection over Union (IoU) error, sustaining continuous learning. In the third stage, the created model is employed to automatically detect defective pixels on actual outdoor LED billboards. The proposed method, applied in this paper, yielded results from accredited measurement experiments that achieved 100% detection of defective pixels on real LED billboards. This confirms the improved efficiency in managing and maintaining LED billboards. Such research findings are anticipated to bring about a revolutionary advancement in the management of LED billboards.

• Journal of Adhesion and Interface
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• v.24 no.2
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• pp.64-68
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• 2023

Organic field-effect transistors (OFETs) are attracting attention in the field of next-generation electronic devices, and they can be fabricated on a flexible substrate using an organic semiconductor as a channel layer. In particular, DPP-based semiconducting conjugated polymers are actively used because they have higher charge carrier mobility than other organic semiconductors, but they are still lower than inorganic semiconductors, so various studies are being conducted to improve the charge carrier mobility. In this study, the charge carrier mobility is improved by controlling the surface energy of the substrate by forming self-assembled monolayers (SAMs). As the surface energy of the substrate is controlled by the SAMs, the crystallinity increases, thereby improving the charge carrier mobility by 14 times from 3.57×10^-3 cm²V^-1s^-1 to 5.12×10^-2 cm²V^-1s^-1

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.332-336
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• 2024

High-energy bandgap material silicon carbide (SiC) is gaining attention as a next-generation power semiconductor material, and in particular, SiC-based MOSFETs are developed as representative power semiconductors to increase the breakdown voltage (BV) of conventional planar structures. However, as the size of SJ (Super Junction) MOSFET devices decreases and the depth of pillars increases, it becomes challenging to uniformly form the doping concentration of pillars. Therefore, a structure with different doping concentrations segmented within the pillar is being researched. Using Silvaco TCAD simulation, a SJ VVD (vertical variation doping profile) MOSFET with three different doping concentrations in the pillar was studied. Simulations were conducted for the width of the pillar and the doping concentration of N-epi, revealing that as the width of the pillar increases, the depletion region widens, leading to an increase in on-specific resistance (R_on,sp) and breakdown voltage (BV). Additionally, as the doping concentration of N-epi increases, the number of carriers increases, and the depletion region narrows, resulting in a decrease in R_on,sp and BV. The optimized SJ VVD MOSFET exhibits a very high figure of merit (BFOM) of 13,400 KW/cm², indicating excellent performance characteristics and suggesting its potential as a next-generation highperformance power device suitable for practical applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.297-303
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• 2024

In this study, KTN heterolayer thin films were fabricated by alternately stacking films of K(Ta_0.70Nb_0.30)O₃ and K(Ta_0.55Nb_0.45)O₃ synthesized using the sol-gel method. The sintering temperature and time were 750℃ and 1 hour, respectively. All specimens exhibited a polycrystalline pseudo-cubic crystal structure, with a lattice constant of approximately 0.398 nm. The average grain size was around 130~150 nm, indicating relatively uniform sizes regardless of the number of coatings. The average thickness of a single-coated film was approximately 70 nm. The phase transition temperature of the KTN heterolayer films was found to be approximately 8~12℃. Moreover, the 6-coated KTN heterolayer film displayed an excellent dielectric constant of about 11,000. As the number of coatings increased, and consequently the film thickness, the remanent polarization increased, while the coercive field decreased. The 6-coated KTN heterolayer film exhibited a remanent polarization and coercive field of 11.4 μC/cm² and 69.3 kV/cm at room temperature, respectively. ΔT showed the highest value at a temperature slightly above the Curie temperature, and for the 6-coated KTN heterolayer film, the ΔT and ΔT/ΔE were approximately 1.93 K and 0.128×10^-6 K·m/V around 40℃, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.164-168
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• 2024

(La_0.7Sr_0.3)(Mn_1-xFe_x)O₃ (LSMFO) (x = 0.03, 0.06, 0.09, 0.12) precursor solution are prepared by sol-gel method. LSMFO thin films are fabricated by the spin-coating method on Pt/Ti/SiO₂/Si substrate, and the sintering temperature and time are 800℃ and 1 hr, respectively. The average thickness of the 6-times coated LSMFO films is about 181 to 190 nm and average grain size is about 18 to 20 nm. As the amount of Fe added in the LSMFO thin film increased, the resistivity decreased, and the TCR and B_25/65-value increased. Electrical resistivity, TCR and B_25/65-value of the (La_0.7Sr_0.3)(Mn_0.88Fe_0.12)O₃ thin film are 0.0136 mΩ-cm, 0.358%/℃, and 328 K at room temperature, respectively. The resistivity properties of LSMFO thin films matched well with Mott's VRH model.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.1
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• pp.43-48
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• 2024

The discovery of a two-dimensional electron gas (2DEG) at the interface of LaAlO₃ (LAO) and SrTiO₃ (STO) substrates has sparked significant interest, providing a foundation for cutting-edge research in electronic devices based on complex oxide heterostructures. However, conventional methods for producing LAO thin films, typically employing techniques like pulsed laser deposition (PLD) within physical vapor deposition (PVD), are associated with high costs and challenges in precisely controlling the La and Al composition within LAO. In this study, we adopted a cost-effective alternative approach-solution-based processing-to fabricate LAO thin films and investigated their electrical properties. By adjusting the concentration of the precursor solution, we varied the thickness of LAO films from 2 to 65 nm and determined the sheet resistance and carrier density for each thickness. After vacuum annealing, the sheet resistance of the conductive channel ranged from 0.015 to 0.020 Ω·s^-1, indicating that electron conduction occurs not only at the LAO/STO interface but also into the STO bulk region, consistent with previous studies. These findings demonstrate the successful formation and control of 2DEG through solution-based processing, offering the potential to reduce process costs and broaden the scope of applications in electronic device manufacturing.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.3
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• pp.42-49
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• 2024

In the electromagnetic wave shielding material market, superior shielding performance in the high-frequency range, along with flexibility and durability, has emerged as critical requirements. The need for high-performance EMI (Electromagnetic Interference) films to address electromagnetic wave interference issues is growing, particularly in various industrial sectors such as smart electronic devices, automotive electronic systems, and communication equipment. In this study, a trimodal silver paste was developed and fabricated into an EMI film, with its performance evaluated. The developed silver paste, utilizing a modified epoxy binder, exhibited properties suitable for screen printing processes. The film demonstrated excellent shielding performance, with an average attenuation of -99 dB in the high-frequency range of the 5G spectrum (26.5 GHz to 40 GHz), and a shielding effectiveness of -90.3 dB at 33.6 GHz. Flexibility and durability tests showed that the film maintained its flexibility even at a curvature radius of 1 mm. In the bending cycle test, the resistance increased by approximately 25.5% from 0.51 Ω to 0.64 Ω after 10,000 cycles in the outer bending scenario, while in the inner bending scenario, the resistance decreased by about 3.6%, indicating reduced resistance to compressive stress.

• Journal of Adhesion and Interface
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• v.25 no.3
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• pp.100-105
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• 2024

A flexible capacitor is a flexible device that can store electrical energy between two electrodes and is an important component of electronic circuits. Electrode patterning in the capacitor is essential for the application to various fields such as display units, and photolithography technology is mainly used for the patterning process. While photolithography technology has the advantage of high technological maturity, it has the disadvantage of requiring expensive process equipment, being harmful to the environment, and having high process costs because two electrodes must be individually patterned. In this study, we studied the process to simultaneously pattern the upper and lower electrodes of a capacitor by non-photolithographic patterning technology based on adhesion control and fabricated a flexible capacitor. Then, we investigated the effect of external stress and nanomaterial addition on the characteristics of the capacitor. As a result, the number of capacitor fabrication processes was significantly decreased based on simultaneous patterning technology for the upper and lower electrodes. In addition, the characteristics of the capacitor were improved by adding inorganic nanomaterials and a flexible capacitor with flexibility to various stresses was successfully fabricated.

• Korean Journal of Materials Research
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• v.24 no.10
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• pp.543-549
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• 2014

A zinc oxide (ZnO) hybrid structure was successfully fabricated on a glass substrate by metal organic chemical vapor deposition (MOCVD). In-situ growth of a multi-dimensional ZnO hybrid structure was achieved by adjusting the growth temperature to determine the morphologies of either film or nanorods without any catalysts such as Au, Cu, Co, or Sn. The ZnO hybrid structure was composed of one-dimensional (1D) nanorods grown continuously on the two-dimensional (2D) ZnO film. The ZnO film of 2D mode was grown at a relatively low temperature, whereas the ZnO nanorods of 1D mode were grown at a higher temperature. The change of the morphologies of these materials led to improvements of the electrical and optical properties. The ZnO hybrid structure was characterized using various analytical tools. Scanning electron microscopy (SEM) was used to determine the surface morphology of the nanorods, which had grown well on the thin film. The structural characteristics of the polycrystalline ZnO hybrid grown on amorphous glass substrate were investigated by X-ray diffraction (XRD). Hall-effect measurement and a four-point probe were used to characterize the electrical properties. The hybrid structure was shown to be very effective at improving the electrical and the optical properties, decreasing the sheet resistance and the reflectance, and increasing the transmittance via refractive index (RI) engineering. The ZnO hybrid structure grown by MOCVD is very promising for opto-electronic devices as Photoconductive UV Detectors, anti-reflection coatings (ARC), and transparent conductive oxides (TCO).