• Journal of the Korean Society of Manufacturing Process Engineers
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• v.9 no.2
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• pp.66-72
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• 2010

Recently a large number of electronic control devices are abruptly increasing in vehicles as the electronic industry advances. Also the number of wiring harnesses and complexity of wiring is proportionally increased to the devices. A newly developed connector named bridge connector is introduced in this study for the purpose of the wiring structure changes. A wiring structure among distributed control systems by using serial communication is proposed with the bridge connector in this paper. The bridge connector contains a auto-recovery fuse made by PTC thermistor material for the protection of the over-currents on local control devices. The auto-recovery function of the fuse is needed for the maintenance free system in the distributed controls. The PTC fuse characteristics organized in this study is tested and the results are showed in detail for the real application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.648-651
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• 2001

We studied about luminance characteristics of blue organic electroluminecent device as thickness ratio. The device is fabricated TPD(N,N'-dyphenyl-N-N'-bis(3-methyphenyl) -1,1'-biphenyl-4,4'-diamine) as hole transport layer and Butyl -PBD(1,1,4,4-Tetraphenyl-1,3-butadiene) as emission layer and electron transport layer. Total thickness is 1000${\AA}$ as HTL and ETL, each devices has 500${\AA}$:500${\AA}$. 400${\AA}$:600${\AA}$ and 600${\AA}$:400${\AA}$ of TPD : Butyl-PBD. We obtained the maximum brightness about 175cd/㎡ 500${\AA}$: 500${\AA}$ thickness devices as HTL:ETL

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.351-354
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• 2001

We fabricated organic electroluminescent(EL) devices with mixed emitting layer of poly (N- vinylcarbazole) ( PVK) , 2,5-bis (5-tert-butyl -2- benzoxaBoly) thiophene ( BBOT) , N,N-diphenyl-N,N- (3-methyphenyl) -1,1-biphenyl-4, 4-thiamine(TPD) and poly(3-hexylthiophene) (P3HT) deposited by LB(Langumuir-Boldgett) method. From the AFM(atomic force microscope) images, the monolayer containing 30% of AA(arachidic acid) showed a roughness value of 28$\AA$. In the voltage-current characteristics of ITO/Emitting layer/BBOT/LiF/A1 devices, current density much smaller than that of the spin-coated devices having a same thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.97-102
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• 1993

According as the high integrity of the semi conductor devices is definited required, the concern on the multi-layered wiring, and three-dimensional devices is growing these days. Therefore, plasma-enhanced chemical vapored deposition(PECVD) enables low-teperature process and is widely used, but it causes the instability of the devices due to a lot of impurities within the film. The PECVD oxynitride was formed by changing the gas ratio of (N$_2$O) to (N$_2$+NH$_3$). It's contained a small portion of hydrogen, had higher refrctive index and capacitance than oxide, and showed the capacitance increasement and the chemical stabi1ity. This is caused by nitrogen distribution increase of the interface lather than within the film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.265-268
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• 1997

Electroluminescent(EL) devices are constructed using multilayer organic thin film. A cell structure of glass substrate/Indium-Tinoxide/TPD as a hole transporting layer/Alq3+Rhodamine 101 perchrolate(Red3) as an emitting layer/Alq3 as an electrron transporting layer/Al as an electrode was employed. Optimal thickness of emitting layer in EL cell was performed from the viewpoint of the electronics properties of emitting layers. The general vapor-deposition method was used to control the thickness of omitting layer in EL devices and electro-optical characteristics were measured. It is clarified that controlling thickness of emitting layer in vapor-deposition film had an effect on the change of carrier injection and EL spectrum. The intensity of red omission with luminance of 81cd/$m^2$ was achived at 11V driving voltage. The surface morphology of emitting layer in EL devices was investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.48-51
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• 1991

Short channel Nonvolatile EEPROM memory devices were fabricated to CMOS 1M bit design rule, and reviews the characteristics and applications of SNOSFET. Application of SNOS field effect transistors have been proposed for both logic circuits and nonvolatile memory arrays, and operating characteristics with write and erase were investigated. As a results, memory window size of four terminal devices and two terminal devices was established low conductance stage and high conductance state, which was operated in “1” state and “0”state with write and erase respectively. And the operating characteristics of unit cell in matrix array were investigated with implementing the composition method of four and two terminal nonvolatile memory cells. It was shown that four terminal 2${\times}$2 matrix array was operated bipolar, and two termineal 2${\times}$2 matrix array was operated unipolar.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.593-596
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• 2002

In this paper, the effect of device model parameter variation on three-dimensional embedded passive devices was investigated using statistical analysis. The optimized equivalent circuit models for several different structures were obtained from HSPICE simulation. The mean and the standard deviation of model parameters were extracted and the sensitivity analysis for each component was performed. From the analysis, the performance and parametric yield of the devices can be analyzed.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.7-14
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• 2015

Recently, advances in nano-material researches have opened the door for various transparent conductive materials, which include carbon nanotube, graphene, Ag and Cu nanowire, and printable metal grids. Among them, Ag nanowires are particularly interesting to synthesize because bulk Ag exhibits the highest electrical conductivity among all metals. Here we reviewed recently-published research works introducing various devices from organic light emitting diode to tactile sensing devices, all of which are employing AgNW for a conducting material. They proposed methods to enhance the stretchability and reversibility of the transparent electrodes, and apply them to make various flexible and stretchable electronics. It is expected that Ag nanowires are applicable to a wide range of high-performance, low-cost, stretchable electronic devices.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.123-129
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• 1994

SONOS EEPROM chips, containing several SONOSFET nonvolatile memories of various channel size, have been fabricated on the basis of the existing n-well CMOS processing technology for 1 Mbit DRAM ($1.2\mu\textrm{m}$.m design rule). All the SONOSFET memories have the triple insulated-gate consisting of 30.angs. tunneling oxide, 205.angs. nitride and 65.angs. blocking oxide. The miniaturization of the devices for the higher density EEPROM and their characteristics alterations accompanied with the scaling-down have been investigated. The stabler operating characteristics were attained by increasing the ratio of the channel width to length. Also, the transfer, switching, retention and degradation characteristics of the most favorable performance devices were presented and discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.826-829
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• 2003

Metal/chalcogenide glass semiconductor(CGS) thin film devices were produced in the vacuum evaporator by the methode of vacuum thermal evaporation. We investigated the influence of the correlations of thickness of metal and CGS upon the concentration of Metal in a CGS thin film. It has shown that M/CGS thin film devices were very sensitive to temperature.