• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1005-1009
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• 2006

High quality three-dimensional (3D) heterostructures were constructed by selective area (SA) molecular beam epitaxy (MBE) using a specially patterned GaAs (001) substrate to improve the efficiency of tarrier transport. MBE growth parameters such as substrate temperature, V/III ratio, growth ratio, group V sources (As2, As4) were varied to calibrate the selective area growth conditions and the 3D GaAs-AlGaAs heterostructures were fabricated into the ridge type and the V-groove type. Scanning micro-photoluminescence $({\mu}-PL)$ measurements and the following analysis revealed that the gradually (adiabatically) coupled 1D-2DEG (electron gas) field effect transistor (FET) system was successfully realized. These 3D-heterostructures are expected to be useful for the realization of high-performance mesoscopic electronic devices and circuits since it makes it possible to form direct ohmic contact onto the (quasi) 1D electron channel.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.110-118
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• 2002

Organic thin film transitors(OTFT) are of interest for use in broad area electronic applications. And recently organic electroluminescent devices(OELD) have been intensively investigated for using in full-color flat-panel display. We have fabricated inverted-staggered structure OTFTs at lower temperature using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active eletronic material and photoacryl as the organic gate insulator. The field effect mobility is 0.039∼0.17 ㎠/Vs, on-off current ratio is 10$\^$6/, and threshold voltage is -7V. And here we report the study of driving emitting, Ir(ppy)$_3$, phosphorescent OELD with all organic thin film transistor and investigated its electrical characteristics. The OELD with a structure of ITO/TPD/8% Ir(ooy)$_3$ doped in BCP/BCP/Alq$_3$/Li:Al/Al and OTFT with a structure of inverted-stagged Al(gate electrode)/photoacry(gate insulator)/pentacene(p-type organic semiconductor)/ Au(source-drain electrode) were fabricated on the ITP patterned glass substrate. The electrical characteristics are turn-on voltage of -10V, and maximum luminance of about 90 cd/㎡. Device characteristics were quite different with that of only OELD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.52-54
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• 2006

In the Langmuir-Blodgett (LB) technique, a monolayer on the water surface is transferred onto a substrate, which is raised and dipped through the surface. From this, multi layers can be obtained in which constituent molecules are periodically arranged. The LB technique has attracted considerable interest in the fabrication of electrical and electronic devices. Many researchers have investigated the electrical properties of monolayer and multiplayer films. Dendrimers represent a new class of synthetic macromolecules characterized by a regularly branched treelike structure. Multiple branching yields a large number of chain ends that distinguish dendrimers from conventional star-like polymers and microgels. The azobenzene dendrimer is one of the dendritic macromolecules that include the azo-group exhibiting a photochromic character. Due to the presence of the charge transfer element of the azo-group and its rod-shaped structure, these compounds are expected to have potential interest in electronics and ptoelectronics, especially in nonlinear optics. In the present paper, we give pressure stimulation to organic thin films and detect the induced displacement current.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.278-282
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• 2007

In the complex insulation system that is used in extra high voltage(EHV) devices, according to the trend for electric power equipment of high capacity and reduction of its size, macro interfaces between two different bulk materials which affect the stability of insulation system exist inevitably. In this paper, the dielectric strength decrease of the macro interfaces between epoxy and ethylene propylene diene terpolymer(EPDM) was estimated by using the applied voltage to breakdown time characteristics. Firstly, the AC short time dielectric strength of specimens was measured at room temperature. Then, the breakdown time was measured under the applied constant voltage which is 70% of short time breakdown voltage. With these processes, the life exponent n was determined by inverse power law, and the long time breakdown voltage can be evaluated. The best condition of the interface was LOS(low viscosity(350 cSt) silicone oil spread specimen). When 30 years last on the specimens, the breakdown voltage was estimated 44% of the short time breakdown voltage.

• Current Optics and Photonics
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• v.2 no.4
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• pp.348-355
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• 2018

How to measure the creepage distance of an insulator quickly and accurately is a problem for the power industry at present, and the noticeable concern is that the high voltage insulation equipment cannot be measured online in the charged state. In view of this situation, we develop an on-line measurement system of creepage distance for high voltage insulators based on binocular stereo vision. We have proposed a method of generating linear structured light using a conical off-axis mirror. The feasibility and effect of two ways to solve the interference problem of strong sunlight have been discussed, one way is to use bandpass filters to enhance the contrast ratio of linear structured light in the images, and the other way is to process the images with adaptive threshold segmentation and feature point extraction. After the system is calibrated, we tested the measurement error of the on-line measurement system with a composite insulator sample. Experimental results show that the maximum relative error is 1.45% and the average relative error is 0.69%, which satisfies the task requirement of not more than 5% of the maximum relative error.

• Proceedings of the IEEK Conference
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• summer
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• pp.204-208
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• 2004

Embedded business will be expanded market more and more since customers seek more wearable and ubiquitous systems. Cellular telephones, PDAs, notebooks and portable multimedia devices could bring higher microprocessor revenues and more rewarding improvements in performance and functions. Increasing battery capacity is still creeping along the roadmap. Until a small practical fuel cell becomes available, microprocessor developers must come up with power-reduction methods. According to MPR 2003, the instruction and data caches of ARM920T processor consume $44\%$ of total processor power. The rest of it is split into the power consumptions of the integer core, memory management units, bus interface unit and other essential CPU circuitry. And the relationships among CPU, peripherals and caches may change in the future. The processor working on higher operating frequency will exact larger cache RAM and consume more energy. In this paper, we propose advanced low power trace cache which caches traces of the dynamic instruction stream, and reduces cache access times. And we evaluate the performance of the trace cache and estimate the power of the trace cache, which is compared with conventional cache.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.12
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• pp.1992-1999
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• 2016

The plasma process is applied to various industrial fields such as high-tech IT industry, textiles and medical. Therefore, there is increasing interest in the plasma power supply, and demand for power devices of high efficiency and high power density is increased. Plasma power supply for process must solve the arc problem, when the plasma is unstable. The output capacitor is closely related to the arc problem. If the output capacitor is smaller, the damage from the arc problem is reduced. However, the small value of the output capacitor affects the operating characteristics of the power supply. In this paper, a LLC resonant converter is adopted, because it can achieve high efficiency and power density in the plasma DC power supply. However, due to the small value of the output capacitor, the converter is operated as a LLCC resonant converter. Therefore, a gain characteristic of LLCC resonant converter is analyzed by using the FHA (First Harmonic Approximation) in plasma power supply. Simulation and experimental results are presented to verify the characteristic analysis of LLCC Resonant Converter.

• The Transactions of the Korean Institute of Power Electronics
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• v.21 no.2
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• pp.111-116
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• 2016

This paper proposes a high-frequency (MHz) LLC resonant converter for a capacitor coupling wireless power transfer (CCWPT). The CCWPT uses electric field in the coupling capacitor between the transmitter and receiver electrodes with a dielectric layer. Given that capacitance is very small and the impedance is large, transferring power with a simple series resonance is difficult. Therefore, the high frequency (MHz) and high Q factor LLC converter is proposed to reduce the impedance of the coupling capacitance and to obtain a high output voltage. This paper deals with the operation analysis of the proposed LLC converter and a theoretical capacitance estimation. The operation and features of the proposed CCWPT LLC converter is verified with a 4.2 W prototype for charging mobile devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.926-929
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• 2007

A significant progress has been made in the characterization of zinc oxide (ZnO) semiconductor as a new semiconductor layer instead of amorphous Si semiconductor used in thin film transistor due to its high electron mobility at low deposition temperature which is quite suitable for flexible display and OLED devices. The wet pattering of ZnO is another important issue with regard to mass production of ZnO thin film transistor device. However, the wet behavior of ZnO thin film in aqueous wet etching solutions conventionally used un TFT industry has not been reported yet, in this work, wet corrosion behavior of RF magnetron sputtered ZnO thin film in various wet solutions such as phosphoric and nitric acid solutions was studied using by electrochemical analysis. The effects of deposition parameters such as RF power and oxygen partial pressure on corrosion rate are also examined.