• Proceedings of the Korean Information Science Society Conference
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• 2011.06b
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• pp.450-453
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• 2011

반도체 공정 기술의 발달에 따라 프로세서의 성능은 비약적으로 증가하였다. 특히 최근에는 하나의 프로세서에 여러 개의 코어를 집적한 멀티코어 프로세서 기술이 급속도로 발달하고 있는 추세이다. 멀티코어 프로세서는 동작주파수를 높여 성능을 개선하는 싱글코어 프로세서의 한계를 극복하기 위해 코어 개수를 늘림으로써 각각의 코어가 더 낮은 동작주파수에서 실행할 수 있도록 하여 소모 전력을 줄일 수 있다. 또한 다수의 코어가 동시에 연산을 수행하기 때문에 싱글코어 프로세서보다 더 많은 연산을 효율적으로 수행하여 사용률이 크게 높아지고 있지만 멀티코어 프로세서에서는 다수의 코어를 단일 칩에 집적하였기 때문에 전력밀도의 증가와 높은 발열이 문제가 되고 있다. 이와 같은 상황에서 본 논문에서는 듀얼코어 프로세서를 탑재한 시스템과 쿼드코어 프로세서를 탑재한 시스템의 소모 전력과 온도를 실제 측정하고 시뮬레이션을 통해 얻은 가상 시스템의 결과를 비교, 분석함으로써 실제 측정 결과와 시뮬레이션 결과가 얼마나 유사한지를 살펴보고, 차이가 발생하는 원인에 대한 분석을 수행하고자 한다. 실험결과, 실제 시스템을 측정한 결과와 시뮬레이션을 통한 가상 시스템의 결과는 매우 유사한 추이를 보이는 것으로 나타났다. 하지만 실제 시스템의 소모 전력과 온도의 증가비율은 가상 시스템의 소모 전력과 온도의 증가비율과는 다른 경향을 보이는 것을 확인하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.20.1-20.1
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• 2010

'Electronic paper (EP)' provides desirable viewing characteristics of paper with being thin, lightweight, flexible, and recordable with minimal power consumption. Currently, a number of different technologies to realize the EP are actively competing. Here we demonstrate a newly developed monolayer rotating ball (MRB) electronic paper display where optically anisotropic rotating balls were disposed in a monolayer, and controllably closely packed with respect to one another. The close packed monolayer configuration provides high brightness and improved contrast with better electrical and optical features in comparison with the typical (Gyrion) rotating ball display. In this talk, we present characteristics of the MRB display in terms of performance, with particular emphasis on the response time as a function of the electric field.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.166-176
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• 2007

Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.506-510
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• 2016

A triple-band (TB) oscillator was implemented in the TSMC $0.18{\mu}m$ 1P6M CMOS process, and it uses a cross-coupled nMOS pair and two shunt $4^{th}$ order LC resonators to form a $6^{th}$ order resonator with three resonant frequencies. The oscillator uses the varactors for band switching and frequency tuning. The core current and power consumption of the high (middle, low)- band core oscillator are 3.59(3.42, 3.4) mA and 2.4(2.29, 2.28) mW, respectively at the dc drain-source bias of 0.67V. The oscillator can generate differential signals in the frequency range of 8.04-8.68 GHz, 5.82-6.15 GHz, and 3.68-4.08 GHz. The die area of the triple-band oscillator is $0.835{\times}1.103mm^2$.

• ETRI Journal
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• v.33 no.2
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• pp.201-209
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• 2011

This paper presents a wide-band fine-resolution digitally controlled oscillator (DCO) with an active inductor using an automatic three-step coarse and gain tuning loop. To control the frequency of the DCO, the transconductance of the active inductor is tuned digitally. To cover the wide tuning range, a three-step coarse tuning scheme is used. In addition, the DCO gain needs to be calibrated digitally to compensate for gain variations. The DCO tuning range is 58% at 2.4 GHz, and the power consumption is 6.6 mW from a 1.2 V supply voltage. An effective frequency resolution is 0.14 kHz. The phase noise of the DCO output at 2.4 GHz is -120.67 dBc/Hz at 1 MHz offset.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.8
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• pp.1369-1375
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• 2016

A rapid progress of the next-generation non-volatile memory device has been made in recent years. Metal/insulator/Metal multi-layer structure resistive RAM(ReRAM) has attracted a great deal of attention because it has advantages of simple fabrication, low cost, low power consumption, and low operating voltage. This paper describes the working principle of the ReRAM device, a review of fabrication techniques, and characteristics of flexible ReRAM devices using graphene oxide as an insulating layer and ReRAM devices using multi-layered insulator. The switching characteristics of the above ReRAM devices have been compared. The oxidized graphene could be employed as an insulator of next generation ReRAM devices.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.106-109
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• 2012

A low power methane gas sensor with microheater was fabricated by silicon bulk micromachining technology. In order to heat up the sensing layer to operating temperature, a platinum (Pt) micro heater was embedded in the gas sensor. The line width and gap of the microheater was 20 ${\mu}m$ and 4.5 ${\mu}m$, respectively. Zinc oxide (ZnO) nanowhisker arrays were grown on a sensor from a ZnO seed layer using a hydrothermal method. A 200 ml aqueous solution of 0.1 mol zinc nitrate hexahydrate, 0.1 mol hexamethylenetetramine, and 0.02 mol polyethylenimine was used for growing ZnO nanowhiskers. Temperature distribution of the sensor was analyzed by infrared thermal camera. The optimum temperature for highest sensitivity was found to be $250^{\circ}C$ although relatively high (64%) sensitivity was obtained even at as low a temperature as $150^{\circ}C$. The power consumption was 72 mW at $250^{\circ}C$, and only 25 mW at $150^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.10
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• pp.4740-4744
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• 2012

The purpose of this paper was to make a LED light control module using Zigbee. The module was made so that brightness of the LED light changes according to the ambient brightness. A 8-bit microcontroller was used to implement the module to enable LED dimming and wireless light intensity measurement. Using the proposed method, power consumption can be improved by up to 48% on average, with 3.4-0.4W changes in power. The measured ambient light intensity values are converted from analog to digital and outputted as a PWM waveform. According to the output waveform and changes in the current outputted from the LED driver, the brightness of the LED light is controlled. Also, Zigbee with close-range wireless communication capabilities was used to enable wireless transmission of light intensity measurements.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.1
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• pp.7-13
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• 2011

A mixed-mode QPSK demodulator for 60-GHz wireless personal area network application is demonstrated. In this work, mixed-mode QPKS demodulation scheme achieving low power consumption and small area is employed. The prototype chip realized by 60-nm CMOS Logic process can demodulate up to 4.8-Gb/s QPSK signals at 4.8-GHz carrier frequency. At this carrier frequency, the demodulator core consumes 54 mW from 1.2-V power supply while the chip area is $150{\times}150{\mu}m^2$. Using the fabricated chip, transmission and demodulation of 1.7-GSymbol/s QPSK signal in 60-GHz link is demonstrated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.278-283
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• 2013

This paper presents a design and fabrication of 0.5 V two stage operational amplifier. The proposed operational amplifier utilizes body-driven differential input stage and self-cascode current mirror structure. Cadence Virtuoso is used for layout and the layout data is verified by LVS through Mentor Calibre. The proposed two stage operational amplifier is fabricated using $0.13{\mu}m$ CMOS process and operation at 0.5 V is confirmed. Measured low frequency small signal gain of operational amplifier is 50 dB, power consumption is $29{\mu}W$ and chip area is $75{\mu}m{\times}90{\mu}m$.