JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Triple-Band Voltage-Controlled Oscillator Using Two Shunt Right-Handed 4th-Order Resonators

  • Lai, Wen-Cheng (Dept. of Electronic Engineering, National Taiwan University of Science and Technology) ;
  • Jang, Sheng-Lyang (Dept. of Electronic Engineering, National Taiwan University of Science and Technology) ;
  • Liu, Yi-You (Dept. of Electronic Engineering, National Taiwan University of Science and Technology) ;
  • Juang, Miin-Horng (Dept. of Electronic Engineering, National Taiwan University of Science and Technology)
  • Received : 2016.03.22
  • Accepted : 2016.06.01
  • Published : 2016.08.30
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Abstract

A triple-band (TB) oscillator was implemented in the TSMC $0.18{\mu}m$ 1P6M CMOS process, and it uses a cross-coupled nMOS pair and two shunt $4^{th}$ order LC resonators to form a $6^{th}$ order resonator with three resonant frequencies. The oscillator uses the varactors for band switching and frequency tuning. The core current and power consumption of the high (middle, low)- band core oscillator are 3.59(3.42, 3.4) mA and 2.4(2.29, 2.28) mW, respectively at the dc drain-source bias of 0.67V. The oscillator can generate differential signals in the frequency range of 8.04-8.68 GHz, 5.82-6.15 GHz, and 3.68-4.08 GHz. The die area of the triple-band oscillator is $0.835{\times}1.103mm^2$.

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References

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