• 제목/요약/키워드: Electronic Circuits

검색결과 958건 처리시간 0.027초

Stretchable and Foldable Electronics by Use of Printable Single-Crystal Silicon

  • 안종현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.29-29
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    • 2008
  • Realization of electronics with performance equal to established technologies that use rigid semiconductor wafers, but in lightweight, foldable and stretchable formats would enable many new application possibilities. Examples include wearable systems for personal health monitoring, 'smart' surgical gloves with integrated electronics and electronic eye type imagers that incorporate focal plane arrays on hemispherical substrates. Circuits that use organic or certain classes of inorganic electronic materials on plastic or steel foil substrates can provide some degree of mechanical flexibility, but they cannot be folded or stretched. Also, with few exceptions such systems offer only modest electrical performance. In this talk, I will present a new approach to high performance, flexible and stretchable integrated circuits. These systems combine single-crystal silicon nanoribbons with thin plastic or elastomeric substrates using both "top-down" and "transfer-printing" technologies. The strategies represent promising routes to high performance, flexible and stretchable optoelectronic devices that can incorporate established, high performance inorganic electronic materials.

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전류 테스팅 고장모델을 위한 객체기반의 고장 검출 (Object Oriented Fault Detection for Fault Models of Current Testing)

  • 배성환;한종길
    • 한국전자통신학회논문지
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    • 제5권4호
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    • pp.443-449
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    • 2010
  • 전류 테스팅은 기존의 전압 테스트 방식에 비해서 높은 고장 검출과 진단 능력을 가진 효과적인 테스트 방식이다. 그러나 상대적으로 느린 전류 테스팅을 위해서 항상 같은 값을 가지는 노드를 찾아내어 제거하는 효율적인 검출 기법이 필요하다. 본 논문에서는 전류 테스팅을 위한 다양한 고장모델에 적용 가능한 객체기반의 고장 검출 기법을 제안한다. ISCAS 벤치마크 회로의 실험결과을 통해서 제안된 방식이 고려되는 고장의 수를 효과적으로 감소시킬 수 있고 다양한 전류 테스팅 고장모델에 적용 가능함을 확인하였다.

정전류다이오드를 이용한 COB 타입 LED 광원 및 조명기기 회로 (Applications of Current Limiting Diode to Chip on Board Type Light Source and Lighting Equipment Circuits)

  • 박화진;유순재;박종민;김윤제
    • 한국전기전자재료학회논문지
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    • 제26권6호
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    • pp.488-492
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    • 2013
  • Current limiting diode (CLD) was fabricated using junction field effect transistor (JFET) structured two small cells and eight large cells. Two small cells and eight large cells were connected in parallel and the obtained constant current was 110 mA. The application of CLD in each of the parallel circuits on chip on board (COB) type LED lighting source, could significantly reduce the current deviation within the parallel circuits. The applications of CLD on AC power small lighting source, battery power low voltage parallel lighting source and AC flat lighting source were investigated.

Clark전극에 의한 DO 농도측정을 위한 절전형 센서개발에 관한 연구 (Development of low power type sensor for the DO concentration measurement by clark electrode)

  • 이동희
    • E2M - 전기 전자와 첨단 소재
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    • 제8권3호
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    • pp.254-260
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    • 1995
  • A method is described for the design and fabrication of the sensor interface circuits on the Clark electrodes for the dissolved oxygen(DO). The discussion includes a method for the +5 V single-supply driving for the sensor circuits, which has low power comsumption for the front-end electronics. DO probe under test is composed of the Clark electrode with silver anode, gold cathode and the electrolyte of half saturated KCI solution and the FEP teflon memtrance for the oxygen penetration. Typical polarograms for the DO probes by using this sensor circuit reveals high accuracy over 99% of the I to V conversion. Partial pressure of oxygen obtained from the polarograms are well suited to the results calculated. It is expected that the proposed sensor circuits can be utilized into the customized IC for the battery-driven small-size DO meters.

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LED Back Light Unit Driver 회로의 안정화 방법 (Considerable reduction of ripple transfer characteristics of the LED Back Light Unit Driver)

  • 문명성;이중희;성광수;장자순
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.161-161
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    • 2010
  • In order to achieve low power consumption and the uniform power spectrum of LED BLU (Back Light Unit) system, new circuits with a 2 stage L-C (Inductor-Capacitor) coupler have been proposed. From the simulation results based on our proposed model, the ripple power of the L-C regulation-embedded BLU circuit shows a dramatic reduction by more than 89.3% as compared to the normal BLU (without L-C circuits). This indicates that the proposed circuit is very promising for the realization of high-efficiency BLU circuits.

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MultiSIM과 NI ELVIS를 이용한 전자회로 해석 (Analysis of Electronic Circuits by using MultiSIM & NI ELVIS)

  • 이명호;사공성대;강현웅
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.147-148
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    • 2008
  • A MultiSIM software is very friendly tool that analysis of electronic circuits. The integrated capture and simulation is much easier to use and provides features that currently meet or exceed those of another capture and simulation tools. And actual hardware use the NI ELVIS to easily and quickly measure circuits and comparison and analysis of simulated actual data. In this paper, we introduce a combination of MultiSIM, the NI ELVIS, and NI LabVIEW and this combination gives to college and university a comprehensive, hands-on experience throughout the entire educational cycle.

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나노미터 MOSFET 파워 게이팅 구조의 노화 현상 분석 (Analysis of Aging Phenomena in Nanomneter MOSFET Power Gating Structure)

  • 이진경;김경기
    • 센서학회지
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    • 제26권4호
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    • pp.292-296
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    • 2017
  • It has become ever harder to design reliable circuits with each nanometer technology node under normal operation conditions, a transistor device can be affected by various aging effects resulting in performance degradation and eventually design failure. The reliability (aging) effect has traditionally been the area of process engineers. However, in the future, even the smallest of variations can slow down a transistor's switching speed, and an aging device may not perform adequately at a very low voltage. Because of such dilemmas, the transistor aging is emerging as a circuit designer's problem. Therefore, in this paper, the impact of aging effects on the delay and power dissipation of digital circuits by using nanomneter MOSFET power gating structure has been analyzed.. Based on this analyzed aging models, a reliable digital circuits can be designed.

AIGaAs/GaAs 이종접합 바이폴라 트랜지스터를 이용한 10Gbps 고속 전송 회로의 설계 및 제작에 관한 연구 (Design and Fabrication of 10Gbps Optical Communication ICs Using AIGaAs/GaAs Heterojunction Bipolar Transistors)

  • 이태우;박문평;김일호;박성호;편광의
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.353-356
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    • 1996
  • Ultra-high-speed analog and digital ICs (integrated circuits) fur 10Gbit/sec optical communication systems have been designed, fabricated and analyzed in this research. These circuits, which are laser diode (LD) driver, pre-amplifier, automatic gain controlled (AGC) amplifier, limiting amplifier and decision circuit, have been implemented with AIGaAs/GaAs heterojunction bipolar transistors (HBTs). The optimized AIGaAs/GaAs HBTs for the 10Gbps circuits in this work showed the cutoff and maximum oscillation frequencies of 65㎓ and 53㎓, respectively. It is demonstrated in this paper that the 10Gbps optical communication system can be realized with the ICs designed and fabricated using AlGaAs/GaAs HBTs.

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다기능 DO 센서용 계측시스템 개발 (Development of the Measurement System for the Multi-Functional DO Sensor)

  • 이동희;김태진;최복길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.86-88
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    • 1996
  • A method is presented for the development of the PC-based measurement system on the 6 cathodes-single anode type multi-functional oxygen electrodes for detecting various components of the solution by measuring the dissolved oxygen(DO) concentration. The system is consisted with the 6 channel sensor signal modyfing circuits for the sensor and the PC interface circuits using the single chip microprocessor 80c196kc. Typical polarograms for the DO probes under test using this sensor circuits are presented. This system covers wide range of measuring time from 300sec to over 16 hour in one measurement step by programming the 9 monitor disply mode.

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Design and Analysis of Current Mode Low Temperature Polysilicon TFT Inverter/Buffer

  • Lee, Joon-Chang;Jeong, Ju-Young
    • Journal of Information Display
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    • 제6권4호
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    • pp.11-15
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    • 2005
  • We propose a current mode logic circuit design method for LTPS TFT for enhancing circuit operating speed. Current mode inverter/buffers with passive resistive load had been designed and fabricated. Measurement results indicated that the smaller logic swing of the current mode allowed significantly faster operation than the static CMOS. In order to reduce the chip size, both all pTFT and all nTFT active load current mode inverter/buffer had been designed and analyzed by HSPICE simulation. Even though the active load current mode circuits were inferior to the passive load circuits, it was superior to static CMOS gates.