Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Analysis of Aging Phenomena in Nanomneter MOSFET Power Gating Structure

나노미터 MOSFET 파워 게이팅 구조의 노화 현상 분석

  • Lee, Jinkyung (Department of Electronic Engineering, Daegu University) ;
  • Kim, Kyung Ki (Department of Electronic Engineering, Daegu University)
  • Received : 2017.07.16
  • Accepted : 2017.07.27
  • Published : 2017.07.31
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Abstract

It has become ever harder to design reliable circuits with each nanometer technology node under normal operation conditions, a transistor device can be affected by various aging effects resulting in performance degradation and eventually design failure. The reliability (aging) effect has traditionally been the area of process engineers. However, in the future, even the smallest of variations can slow down a transistor's switching speed, and an aging device may not perform adequately at a very low voltage. Because of such dilemmas, the transistor aging is emerging as a circuit designer's problem. Therefore, in this paper, the impact of aging effects on the delay and power dissipation of digital circuits by using nanomneter MOSFET power gating structure has been analyzed.. Based on this analyzed aging models, a reliable digital circuits can be designed.

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References

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