• Title/Summary/Keyword: Electron wavelength

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Electron Probe Micro Analysis of Cs in $UO_2$ (우라늄산화물중 Cs의 전자탐침 미세분석)

  • Park, Soon Dal;Joe, Kih Soo;Kim, Won Ho
    • Analytical Science and Technology
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    • v.14 no.3
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    • pp.203-211
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    • 2001
  • In this paper it was described on the intereference effect of uranium to analyze Cs in $UO_2$ by Electron Probe Micro Analysis(EPMA) and the beam stability of Cs $L_{\alpha}$ X-ray intensity for some Cs compounds. According to the experimental results, the CsI showed the highest $L_{\alpha}$ X-ray intensity among the tested Cs compounds at the experimental condition; 15~30 kV of accelerating voltage and PET, LiF crystal. When 100 nA of beam current was applied to Cs compounds, Cs $L_{\alpha}$ X-ray intensity was continuously decreased with increasing time. The decreasing rate of Cs $L_{\alpha}$ X-ray intensity was directly proportional to the applied beam current and accelerating voltage but inversely proportional to the applied beam size. It was found that uranium interference can be prevented by using Cs $L_{\alpha}$ X-ray wavelength of Lif crytal for Cs analysis in $UO_2$ by EPMA.

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Annealing Effects on the Properties of Bi-doped ZnO Thin Film (Bi-doped ZnO 박막의 열처리에 따른 특성)

  • Shin, Johngeon;Hwang, Injoo;Cho, Shinho
    • Journal of the Korean Society for Heat Treatment
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    • v.33 no.1
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    • pp.13-19
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    • 2020
  • Annealing effects on the properties of Bi-doped ZnO thin films were investigated. Bi- doped ZnO thin films were deposited on quartzs substrates at 300℃ by using radio-frequency magnetron sputtering system. Post heat treatments at 600, 700, and 800℃ were performed to evaluate the effect of annealing temperatures on the structural, optical, and electrical properties of Bi-doped ZnO thin films. FE-SEM images showed the dramatic surface morphology changes by rearrangement of elements at high heat treatment temperature of 800℃. X-ray diffraction analysis indicated that the peaks of the Bi-doped ZnO thin films were same as the peaks of the (002) planes of ZnO peak-positioned at 2θ=34.0° and peak intensities and FWHMs were improved as the annealing temperatures increased. The optical transmittance was improved with increasing annealing temperatures and was over 80% in the wavelength region between 435 and 1100 nm at the annealing temperature of 700 and 800℃. With increasing annealing temperature, the electron concentrations and electron mobilities were increased. On the other hand, electric resistivity of the films were decreased with increasing annealing temperatures. These results showed that the heat treatment temperature is an important parameter to improve the structural, optical, and electrical properties of Bi-doped ZnO thin films.

Green Phosphorescent OLED Without a Hole/Exciton Blocking Layer Using Intermixed Double Host and Selective Doping

  • Kim, Won-Ki;Kim, Hyung-Seok;Shin, Hyun-Kwan;Jang, Ji-Geun
    • Korean Journal of Materials Research
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    • v.19 no.5
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    • pp.240-244
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    • 2009
  • Simple and high efficiency green phosphorescent devices using an intermixed double host of 4, 4', 4"-tris(N-carbazolyl) triphenylamine [TCTA], 1, 3, 5-tris (N-phenylbenzimiazole-2-yl) benzene [TPBI], phosphorescent dye of tris(2-phenylpyridine)iridium(III) [$Ir(ppy)_3$], and selective doping in the TPBI region were fabricated, and their electro luminescent characteristics were evaluated. In the device fabrication, layers of $70{\AA}$-TCTA/$90{\AA}$-$TCTA_[0.5}TPBI_{0.5}$/$90{\AA}$-TPBI doped with $Ir(ppy)_3$ of 8% and an undoped layer of $50{\AA}$-TPBI were successively deposited to form an emission region, and SFC137 [proprietary electron transporting material] with three different thicknesses of $300{\AA}$, $500{\AA}$, and $700{\AA}$ were used as an electron transport layer. The device with $500{\AA}$-SFC137 showed the luminance of $48,300\;cd/m^2$ at an applied voltage of 10 V, and a maximum current efficiency of 57 cd/A under a luminance of $230\;cd/m^2$. The peak wavelength in the electroluminescent spectral and color coordinates on the Commission Internationale de I'Eclairage [CIE] chart were 512 nm and (0.31, 0.62), respectively.

The spectroscopic study of chemical reaction of laser-ablated aluminum-oxygen by high power laser (분광분석을 활용한 고에너지 레이저 환경에서의 알루미늄-산소 화학반응 연구)

  • Kim, Chang-hwan
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.44 no.9
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    • pp.789-795
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    • 2016
  • Laser-induced combustions and explosions generated by high laser irradiances were explored by Laser-Induced Breakdown Spectroscopy (LIBS). The laser used for target ablation is a Q-switched Nd:YAG laser with 7 ns pulse duration at wavelength of 1064 nm laser energies from 40 mJ to 2500 mJ ($6.88{\times}10^{10}-6.53{\times}10^{11}W/cm^2$). The plasma light source from aluminum detected by the echelle grating spectrometer and coupled to the gated ICCD(a resolution (${\lambda}/{\Delta}{\lambda}$) of 5000). This spectroscopic study has been investigated for obtaining both the atomic/molecular signals of aluminum-oxygen and the calculated ambient condition such as plasma temperature and electron density. The essence of the paper is observing specific electron density ratio which can support the processes of chemical reaction and combustion between ablated aluminum plume and oxygen from air by inducing high laser energy.

Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition

  • Kim, Y.;Song, W.;Lee, S.Y.;Jung, W.;Kim, M.K.;Jeon, C.;Park, C.Y.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.80-80
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    • 2010
  • Graphene has attracted tremendous attention for the last a few years due to it fascinating electrical, mechanical, and chemical properties. Up to now, several methods have been developed exclusively to prepare graphene, which include micromechanical cleavage, polycrystalline Ni employing chemical vapor deposition technique, solvent thermal reaction, thermal desorption of Si from SiC substrates, chemical routes via graphite intercalation compounds or graphite oxide. In particular, polycrystalline Ni foil and conventional chemical vapor deposition system have been widely used for synthesis of large-area graphene. [1-3] In this study, synthesis of mono-layer graphene on a Ni foil, the mixing ratio of hydrocarbon ($CH_4$) gas to hydrogen gas, microwave power, and growth time were systemically optimized. It is possible to synthesize a graphene at relatively lower temperature ($500^{\circ}C$) than those (${\sim}1000^{\circ}C$) of previous results. Also, we could control the number of graphene according to the growth conditions. The structural features such as surface morphology, crystallinity and number of layer were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM), transmission electron microscopy (TEM) and resonant Raman spectroscopy with 514 nm excitation wavelength. We believe that our approach for the synthesis of mono-layer graphene may be potentially useful for the development of many electronic devices.

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Variation in optical, dielectric and sintering behavior of nanocrystalline NdBa2NbO6

  • Mathai, Kumpamthanath Chacko;Vidya, Sukumariamma;Solomon, Sam;Thomas, Jijimon Kumpukattu
    • Advances in materials Research
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    • v.2 no.2
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    • pp.77-91
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    • 2013
  • High quality nanoparticles of neodymium barium niobium ($NdBa_2NbO_6$) perovskites have been synthesized using an auto ignition combustion technique for the first time. The nanoparticles thus obtained have been characterized by powder X-ray diffraction, thermo gravimetric analysis, differential thermal analysis, Fourier transform infrared spectroscopy, Raman spectroscopy and transmission electron microscopy. UV-Visible absorption and photoluminescence spectra of the samples are also recorded. The structural analysis shows that the nano powder is phase pure with the average particle size of 35 nm. The band gap determined for $NdBa_2NbO_6$ is 3.9 eV which corresponds to UV-radiation for optical inter band transition with a wavelength of 370nm. The nanopowder could be sintered to 96% of the theoretical density at $1325^{\circ}C$ for 2h. The ultrafine cuboidal nature of nanopowders with fewer degree of agglomeration improved the sinterability for compactness at relatively lower temperature and time. During the sintering process the wide band gap semiconducting behavior diminishes and the material turns to a high permittivity dielectric. The microstructure of the sintered surface was examined using scanning electron microscopy. The striking value of dielectric constant ${\varepsilon}_r=43$, loss factor tan ${\delta}=1.97{\times}10^{-4}$ and the observed band gap value make it suitable for many dielectric devices.

A Study on the Radius of Curvature of Concave Optical Fiber Tips fabricated by Laser-Induced Photothermal Effect (레이저 유도 광열 효과를 이용하여 제작된 오목한 광섬유 팁의 곡률 반경에 관한 연구)

  • Choi, Ji-Won;Son, Gyeong-Ho;Yu, Kyoung-Sik
    • The Journal of the Korea institute of electronic communication sciences
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    • v.14 no.5
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    • pp.871-876
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    • 2019
  • We fabricated concave optical fiber tips using hydrofluoric acid solution and photothermal effect induced by $1.55{\mu}m$ wavelength laser applied to an optical fiber. The radius of curvature of the concave optical fiber tips fabricated with different applied laser power, etching time, and concentration of hydrofluoric acid was measured with an optical microscope. Then, we analyzed how the radius of curvature changes for those three variables. In addition, the reliability of the measurement method using a microscope was verified through a free spectral range(FSR) and a scanning electron microscope(SEM). Through this paper, the radius of curvature can be adjusted by the variables of the fabrication process of concave optical fiber tips; thus, it is overcoming the limitations of conventional optical fiber etching methods using hydrofluoric acid solutions.

Syntheses and Characterization of Polyurethane Polymers with Versatile Stilbene Chromophores (Stilbene 발광 유도체를 가지는 Polyurethane을 기본으로 하는 고분자의 합성 및 특성)

  • Jin, Youngeup;Noh, Ji Young;Park, Seong Soo;Ju, Changsik;Suh, Hongsuk
    • Applied Chemistry for Engineering
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    • v.22 no.4
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    • pp.348-352
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    • 2011
  • In this research, we have synthesized new pendant-type polyurethane polymers by introducing various chromophores with stilbene derivatives in the side-chain of the polymer backbone. The Stilbene monomers, N,N-bis(2-hydroxyethyl) amino-4'-cyanostilbene, N,N-bis(2-hydroxyethyl)amino-4'-methoxy stilbene, N,N-bis(2-hydroxyethyl)amino-4'-acetylstilbene, and N,N-bis(2-hydroxyethyl) amino stilbene, were synthesized by Wittig reaction. Another stilbene monomer, N,N-bis(2-hydroxyethyl)amino-4'-nitrostilbene, was synthesized by Knoevenagel condensation. By the measurement of UV-Vis absorption and Photoluminescence (PL) spectrum, we found that introduction of the electron-withdrawing group as a substituent shifts both UV-Vis and PL spectra to longer wavelength, and the introduction of the electron-donating group results in blue-shift of the spectrum. In case of polymer with $NO_2$ group as a substituent, PL is quenched.

A Study on the Ordering of Na Ions in $Na_xWO_3(0.5{\leq}x{\leq}1.0)$

  • Na, Jong-Chul;Sahn Nahm;Kim, Myong-Ho;Lee, Hyack-Joo;Byun, Jae-Dong
    • The Korean Journal of Ceramics
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    • v.2 no.3
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    • pp.157-161
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    • 1996
  • Cry structures of $Na_xWO_3$ (0.5$\leq$x$\leq$1.0) were investigated. Transmission electron microscopy (TEM) studies indicate that there is an ordering of sodium ions when x=0.75. The direction of ordering is [110] and the wavelength of ordering is twice of the interplanar distance of (110) plane. It has been confirmed that a superlattice containing eight $Na_{0.75}WO_3$ is the unit cell of ordered structure. In this unit cell, Na sites at (000) and ($\frac{2}{1}\frac{2}{1}\frac{2}{1}$) are vacant. The ordered phase was preserved after the annealing at $600^{\circ}C$ in the air. In reduced $Na_xWO_3$ with x=0.5 and 1.0, extra phases were found with the partially ordered perovskite phase. After annealing at $600^{\circ}C$, theses phases transformed to the phases found in calcined specimens.

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Optical Properties of ZnHgGa4Se8 and ZnHgGa4Se8:Co2+ Single Crystals

  • Lee Choong-Il
    • Korean Journal of Materials Research
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    • v.15 no.10
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    • pp.657-661
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    • 2005
  • [ $ZnHgGa_4Se_8\;and\;ZnHgGa_4Se_8::Co^{2+}$ ] single crystals were grown by the Bridgman-Stockbarger method. The single crystals crystallized into a defect chalcopyrite structure. The optical energy band gap of the single crystals was investigated in the temperature range 11-300K. The optical energy band gap of the $ZnHgGa_4Se_8:Co^{2+}$ single crystal was smaller than that of the $ZnHgGa_4Se_8$ single crystal. The temperature dependence of the optical energy band gap of the single crystals was well fitted by the Varshni equqtion. The impurity optical absorption spectrum of the $ZnHgGa_4Se_8:Co^{2+}$ single crystal was measured in the wavelength region 300-2300 m at 80 K. Impurity absorption peaks in the spectrum were analyzed within the framework of the crystal field theory and were attributed to the electron transitions between the energy levels of $Co^{2+}$ sited in the Td symmetry point.