• The Transactions of the Korean Institute of Electrical Engineers
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• v.35 no.5
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• pp.199-204
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• 1986

The breakdown phenomena of N2 gas by 13.56MHz electric field are very different from those under steady field. In this paper we analyzed the breakdown phenomena by using electron distribution function and diffusion equation. The second-order differential equation derived from the Boltzmann equation is solved for the electron distribution function. The ionization rate and diffusion coefficient are calculated using kinetic theory formulas. The breakdown condition is that the number of electrons produced by ionization equal the number diffusing to the walls of the discharge chamber. Theses theoretical breakdown electric fields are calculated by the computer and compared with the experimental values.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.3
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• pp.426-431
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• 1996

It is well known that the understanding of the complex mechanism of magnetoplasma is closely related with understanding of the collective behavior of discharge plasma parameters such as the cathode-sheath potential, cathode-sheath thickness, electron temperature, electron density, and ambipolar diffusion. In this paper, some of the relationships between these plasma parameters and magnetic field is investigated experimentally with a Langmuir probe in the magnetoplasma generated by D.C diode system. It is found that when magnetic field is increased, cathode-sheath potential, cathode-sheath thickness, and ambipolar diffusion are decreased. In addition, peak ion density obtained as a parameter of ionic signal voltage by Faraday cup method is independent of magnetic field. (author). 9 refs., 11 figs.,1 tab.

• Advances in materials Research
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• v.1 no.2
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• pp.147-160
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• 2012

In the present study, diffusion bonding was carried out between AZ31B magnesium and AA2024 aluminium in the temperature range of $405^{\circ}C$ to $475^{\circ}C$ for 15 min to 85 min and 5MPa to 20 MPa uniaxial loads was applied. Interface quality of the joints was assessed by microhardness and shear testing. Also, the bonding interfaces were analyzed by means of optical microscopy, scanning electron microscopy, energy dispersive spectrometer and XRD. The maximum bonding and shear strength was obtained at $440^{\circ}C$, 12 MPa and 70 min. The maximum hardness values were obtained from the area next to the interface in magnesium side of the joint. The hardness values were found to decrease with increasing distance from the interface in magnesium side while it remained constant in aluminium side. It was seen that the diffusion transition zone near the interface consists of various phases of $MgAl_2O_4$, $Mg_2SiO_4$ and $Al_2SiO_5$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.131-139
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• 1996

Inthis apper wa analyzed the channel-hot-electron programming characteristics of the single-poly EEPROM with different control gate and drain structures. The single-poly EEPROM uses the p$^{+}$/n$^{+}$-diffusion in the n-well as a control gate instead of the second poly-silicon. The program and erase characteristics of the single-poly EEPROM were verified using the two-dimensional device simulator, MEDICI. The single-poly EEPROM was fabricated using 0.8$\mu$m ASIC CMOS process, and its CHE programming characteristics were measured using HP4155 parameteric analyzer and HP8110 pulse gnerator. Especially we investigated the CHE programming characteristics of the single-poly EEPROM with the p$^{+}$-diffusion or n$^{+}$-diffusion in the n-well as a control gate and the LDD or single-drain structure. The single-poly EEPROM with p$^{+}$-diffusion in the n-well as a control gate and single-drain structure was programmed to about VT$\thickapprox$5V with VDS=6V, VCG=12V(1ms pulse width).th).

• Journal of Satellite, Information and Communications
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• v.9 no.2
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• pp.12-17
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• 2014

In this paper, modified EDNMOS device with DPS (double polarity source) structure are suggested to realize stable and robust ESD (electrostatic discharge) protection performance of high voltage operating microchip. This DPS structure inserts the P+ diffusion layer on N+ source side, which in intended to block lateral extension of the electron rich region from N+ source side. Based on our simulation results, the inserted P+ diffusion layer effectively prevents the formation of deep electron channeling induced by high electron injection. As a result, our proposed DPS_EDNMOS devices could overcome the double snapback effect of conventional Std_EDNMOS device.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.623-626
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• 2004

The purpose of this paper is to determinate and to confirm p-n junction depth with nondestructive method by using electron beam. By measuring the critical short circuit current on the p-n junction which induced by electron beam and calculating generation range, the diffusion depth can be obtained. It ran be seen that values destructively measured by constant angle lapping and nondestructively by this study almost concur. As this result, it is purposed that diffusion depth of p-n junction can be easily measured by non-destruction. And this nondestructive method ran be recommended highly to the industrial analysis.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.685-692
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• 1995

The electron transport coefficients in argon gas is studied over the range of E/N values from 85 to 566 Td by the Monte Carlo method considering the latest cross section data. The result of the Monte Carlo method analysis shows that the value of the electron transport coefficients such as the electron drift velocity, the ratio of the longitudinal and transverse diffusion coefficients to the mobility. It is also found that the electron transport coefficients calculated by the two-term approximation analysis agree well with those by Monte Carlo calculation. The electron energy distributions function were analysed in argon at E/N=283, and 566 Td for a case of the equilibrium region in the mean electron energy. A momentum transfer cross section for the argon atom which was consistent with both of the present electron transport coefficients was derived over the range of mean electron energy from 10.3 to 14.5 eV, also suggested as a set of electron cross section for argon atom. The validity of the results obtained has been confirmed by a Monte Carlo simulation method.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1540-1541
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• 2011

We calculated the electron transport coefficients in $H_2$+Ar gas calculated E/N values 0.01 ~ 1 Td by the Boltzmann equation method. This study gained the values of the electron swarm parameters such as the electron drift velocity and the transverse diffusion coefficients for $H_2$+Ar gas at a range of E/N. The transport coefficient W and Dt/u have been calculated in mixtures of 0.5% and 4% hydrogen in argon. All values were made at 293 K.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1404_1405
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• 2009

For quantitative understanding of gas discharge phenomena, we should know electron collision cross section. $GeH_4$ is used in many applications with $Si_2H_6$ gas, such as amorphous alloy, a thin film of silicon and solar cell. Therefore, we understand the electron transport characteristics and analysed the electron transport coefficients, the electron drift velocity W, the longitudinal and transverse diffusion coefficient $ND_L$ and $ND_T$, and the ionization coefficient $\alpha$/N in $GeH_4$gas over the E/N range from 0.01 to 1000 Td by two-term approximation of the Boltzmann equation.

• Journal of Electrical Engineering and Technology
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• v.11 no.2
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• pp.455-462
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• 2016

The electron transport coefficients in not only pure atoms and molecules but also in the binary gas mixtures are necessary, especially on understanding quantitatively plasma phenomena and ionized gases. Electron transport coefficients (electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient) in binary mixtures of TEOS gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was analyzed and calculated by a two-term approximation of the Boltzmann equation in the E/N range (ratio of the electric field E to the neutral number density N) of 0.1 - 1000 Td (1 Td = 10⁻¹⁷ V.cm²). These binary gas mixtures can be considered to use as the silicon sources in many industrial applications depending on mixture ratio and particular application of gas, especially on plasma assisted thin-film deposition.