• Bulletin of the Korean Chemical Society
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• v.24 no.12
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• pp.1751-1756
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• 2003

An electrochemical study related to the electroreduction of 4-amino-6-methyl-3-thio-1,2,4-triazin-5-one(I), 6-methyl-3-thio-1,2,4-triazin-5-one(II), and 2,4-dimetoxy-6-methyl-1,3,5-triazine(III) in dimethylformamide at glassy carbon electrode has been performed. A variety of electrochemical techniques, such as differential pulse voltammetry (DPV), cyclic voltammetry (CV), chronoamperometry, and coulometry were employed to clarify the mechanism of the electrode process. The compounds I and II with thiol group exhibited similar redox behavior. Both displayed two cathodic peaks, whereas the third compound, III, without thiol group showed only one cathodic peak in the same potential range of the second peak of I and II. The results of this study suggest that in the first step the one electron reduction of thiol produced a disulfide derivative and in the second reduction step the azomethane in the triazine ring was reduced in two electron processes. A reduction mechanism for all three compounds is proposed on this basis. In addition, some numerical constants, such as diffusion constant, transfer coefficient, and rate constant of coupled chemical reaction in the first reduction peak were also reported.

• Journal of Electrochemical Science and Technology
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• v.1 no.2
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• pp.75-80
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• 2010

We report Co-tetramethoxyphenylporphyrin on carbon particles (Co-TMPP/C) as a non-Pt catalyst for tri-iodide reduction in dye-sensitized solar cells (DSSCs). The presence of well-dispersed carbon and cobalt source in the catalyst surface is confirmed by transmission electron microscopy, scanning electron microscopy, and energy dispersive X-ray analysis. In the C 1s, Co 2p, and N 1s peaks measured by X-ray photoelectron spectroscopy, the C-N, Co-$N_4$, and N-C are assigned to the component at 285.7, 781.8, and 401 eV, respectively. Especially, the Co-TMPP/C shows improved current density, diffusion coefficient, and charge-transfer resistance in the ${I_3}^-/I^-$ redox reaction compared to conventional catalysts. Furthermore, in the DSSCs performance, the Co-TMPP/C shows increased short circuit current density, higher open circuit voltage, and improved cell efficieny in comparison with Pt/C.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.411-414
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• 2013

In order to enhance the photovoltaic property of the CdS/CdSe co-sensitized quantum dot sensitized solar cells (QDSSCs), the surface of nanoporous $TiO_2$ photoanode was modified by ultrathin $Al_2O_3$ layer before the deposition of quantum dots (QDs). The $Al_2O_3$ layer, dip-coated by 0.10 M Al precursor solution, exhibited the optimized performance in blocking the back-reaction of the photo-injected electrons from $TiO_2$ conduction band (CB) to polysulfide electrolyte. Transient photocurrent spectra revealed that the electron lifetime (${\tau}_e$) increased significantly by introducing the ultrathin $Al_2O_3$ layer on $TiO_2$ surface, whereas the electron diffusion coefficient ($D_e$) was not varied. As a result, the $V_{oc}$ increased from 0.487 to 0.545 V, without appreciable change in short circuit current ($J_{sc}$), thus inducing the enhancement of photovoltaic conversion efficiency (${\eta}$) from 3.01% to 3.38%.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.4
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• pp.132-138
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• 2023

Doped and undoped-BiVO₄ samples with different elements (Li, Mg) and amounts were synthesized with a hydrothermal method. The synthesized samples were characterized using various techniques including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV-Vis diffusion reflectance spectroscopy (UV-Vis DRS), and photoluminescence (PL) spectroscopy. Photocatalytic activity of the samples was evaluated by measuring the degradation of methyl blue (MB) under visible light irradiation. The results indicated that the incorporation of Mg and Li into BiVO₄ caused lattice distortion, the presence of surface hydroxyl groups, a narrower band gap, and a reduced recombination ratio of photo-induced electron-hole pairs. Notably, the photocatalytic activity of Mg5%-Li5% co-doped BiVO₄ sample exhibited a significant improvement compared to that of undoped BiVO₄ sample.

• Progress in Superconductivity and Cryogenics
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• v.12 no.4
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• pp.17-19
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• 2010

In this work, the optimized process condition of chemical solution deposition which is used to planarize the surface of the metal tape (which is used to grow IBAD-MgO texture template) was investigated. $Y_2O_3$ films were dip-coated on the surface of the unpolished metal tape as the seed and barrier layer. The effects of $Y_2O_3$ concentration of the solution (0.5wt.%, 1.3wt.%, 2.8wt.%, 5.6wt.%) and the number of coatings on the surface morphology and barrier capability against the diffusion from the metal tape were examined. The surface morphology and the thickness of the film were observed using the scanning electron microscope and the atomic force microscope. The presence of elements in metal tape on the film surface was analyzed using the auger electron spectroscopy. The $Y_2O_3$ film thickness increases with increasing the $Y_2O_3$ concentration in the solution, and the surface became smoother with increasing the number of coating cycles. The best result was obtained from the $Y_2O_3$ film coated 4 cycles using 2.8wt.% solution.

• Progress in Superconductivity and Cryogenics
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• v.26 no.1
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• pp.14-19
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• 2024

In this study, we explore the anisotropy of electron-phonon coupling (EPC) constant in epitaxially grown MgB₂ films on c-axis oriented Al₂O₃, examining its correlation with the critical temperature (T_c) and local structural disorder assessed through polarized Raman scattering. Analysis of the polarized Raman spectra reveals angle-dependent variations in the intensity of the phonon spectra. The Raman active mode originating from the boron plane, along with two additional phonon modes from the phonon density of states (PDOS) induced by lattice distortion, was distinctly observed. Persistent impurity scattering, likely attributed to oxygen diffusion, was noted at consistent frequencies across all measurement angles. The EPC values derived from the primary Raman active phonon do not significantly vary with changing observation angles, followed by that the T_c values calculated using the Allen and Dynes formula remain relatively constant across all polarization angles. Although the E_2g phonon mode plays a crucial role in the EPC mechanism, the determination of T_c values in MgB₂ involves not only electron-E_2g coupling but also contributions from other phonon modes.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.7-15
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• 2006

In-situ observation of electromigration in thin film pattern of 63Sn-37Pb solder was performed using a scanning electron microscope system. The 63Sn-37Pb solder had the incubation stage of electromigration for edge movement when the current density of $6.0{\times}10^{4}A/cm^2$ was applied the temperature between $90^{\circ}C\;and\;110^{\circ}C$. The major diffusion elements due to electromigration were Pb and Sn at temperatures of $90-110^{\circ}C\;and\;25-50^{\circ}C$, respectively, while no major diffusion of any element due to electromigration was detected when the test temperature was $70^{\circ}C$. The reason was that both the elements of Sn and Pb were migrated simultaneously under such a stress condition. The existence of the incubation stage was observed due to Pb migration before Sn migration at $90-110^{\circ}C$. Electromigration behavior of 63Sn-37Pb solder had an incubation time in common for edge drift and void nucleation, which seemed to be related the lifetime of flip chip solder bump. Diffusivity with $Z^*$(effective charges number) of Pb and Sn were strongly affect the electromigration-induced major diffusion element in SnPb solder by temperature, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.71-71
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• 2011

Dye-sensitized solar cells (DSCs) have drawn great academic attention due to their potential as low-cost renewable energy sources. DSCs contain a nanostructured TiO2 photoanode, which is a key-component for high conversion efficiency. Particularly, one-dimensional (1-D) nanostructured photoanodes can enhance the electron transport for the efficient collection to the conducting substrate in competition with the recombination processes. This is because photoelectron colletion is determined by trapping/detrapping events along the site of the electron traps (defects, surface states, grain boundaries, and self-trapping). Therefore, 1-D nanostructured photoanodes are advantageous for the fast electron transport due to their desirable features of greatly reduced intercrystalline contacts with specified directionality. In particular, anodic TiO2 nanotube (NT) electrodes recently have been intensively explored owing to their ideal structure for application in DSCs. Besides the enhanced electron transport properties resulted from the 1-D structure, highly ordered and vertically oriented nanostructure of anodic TiO2 NT can contribute additional merits, such as enhanced electrolyte diffusion, better interfacial contact with viscous electrolytes. First, to confirm the advantages of 1-D nanostructured material for the photoelectron collection, we compared the electron transport and charge recombination characteristics between nanoparticle (NP)- and nanorod (NR)-based photoanodes in DSCs by the stepped light-induced transient measurements of photocurrent and voltage (SLIM-PCV). We confirmed that the electron lifetime of the NR-based photoanode was much longer than that of the NP-based photoanode. In addition, highly ordered and vertically oriented TiO2 NT photoanodes were prepared by electrochemical anodization method. We compared the photovoltaic properties of DSCs utilizing TiO2 NT photoanodes prepared by one-step anodization and two-step anodization. And, to reduce the charge recombination rate, energy barrier layer (ZnO, Al2O3)-coated TiO2 NTs also applied in DSC. Furthermore, we applied the TiO2 NT photoanode in DSCs using a viscous electrolyte, i.e., cobalt bipyridyl redox electrolyte, and confirmed that the pore structure of NT array can enhance the performances of this viscous electrolyte.

• Clean Technology
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• v.29 no.4
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• pp.244-248
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• 2023

Recently, displays play an important role in quickly delivering a lot of information. Research is underway to reproduce various colors close to natural colors. In particular, research is being conducted on the light emitting structure of displays as a method of expressing accurate and rich colors. Due to the advancement of technology and the miniaturization of devices, the need for small but high visibility displays with high efficiency in energy consumption continues to increase. Efforts are being made in various ways to improve OLED efficiency, such as improving carrier injection, structuring devices that can efficiently recombine electrons and holes in a numerical balance, and developing materials with high luminous efficiency. In this study, the electrical and optical properties of the seven-layer stacked structure rear-light emitting blue OLED device were analyzed. 4,4'-Bis(carazol-9-yl)biphenyl:Ir(difppy)2(pic), a blue light emitting material that is easy to manufacture and can be highly efficient and brightened, was used. OLED device manufacturing was performed via the in-situ method in a high vacuum state of 5×10-8 Torr or less using a Sunicel Plus 200 system. The experiment was conducted with a seven-layer structure in which an electron or hole blocking layer (EBL or HBL) was added to a five-layer structure in which an electron or hole injection layer (EIL or HIL) or an electron or hole transport layer (ETL or HTL) was added. Analysis of the electrical and optical properties showed that the device that prevented color diffusion by inserting an EBL layer and a HBL layer showed excellent color purity. The results of this study are expected to greatly contribute to the R&D foundation and practical use of blue OLED display devices.