• Journal of the Korean Chemical Society
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• v.57 no.1
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• pp.159-164
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• 2013

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1579-1582
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• 2011

Alumina particles wrapped in few-layer graphene sheets were prepared by calcining aluminum nitride powders under a mixed gas flow of carbon monoxide and argon. The graphene sheets were characterized by powder X-ray diffraction (XRD), Raman spectroscopy, electron energy loss spectroscopy, and high-resolution transmission electron microscopy. The few-layer graphene sheets, which wrapped around the alumina particles, did not exhibit any diffraction peaks in the XRD patterns but did show three characteristic bands (D, G, and 2D bands) in the Raman spectra. The dye-sensitized solar cell (DSSC) with the alumina particles wrapped in few-layer graphene sheets exhibited significantly improved overall energy-conversion efficiency, compared to conventional DSSC, due to longer electron lifetime.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.517-520
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• 2004

Organosilicate films are promising porous low-dielectric materials, which can replace the silicon dioxide films. It was researched that organosilicate films have two different chemical shifts according to the increase of the flow rate ratio. There are the red shift due to the electron deficient substitution group, and the blue shift of the electron rich substitution group. Among these chemical shifts, the blue shift from $1000 cm^{-1}$ to $1250 cm^{-1}$ was related with the formation of pores. The methyl radicals of the electron-rich substitution group terminate easily the Si-O-Si cross-link, and the Si-O-C cage-link near $1057 cm^{-1}$ is originated from the cross-link breakdown due to much methyl radicals.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.278-280
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• 1994

The purpose of this paper is to describe an application of plasma polymerized thin film as an electron beam resist. Plasma polymerized thin film was prepared using an interelectrod inductively coupled gas-flow-type reactor. Styrene was chosen as the monomer to be used. This thin films were also delineated by the electron-beam apparatus and the pattern in the resist was developed with RIE and plasma polymerized apparatus. The effect of charge of pressure on growth rate and etching rate of the thin films were studied. The molecular structure of thin film was investigated by FT-IR and then was discussed in relation to its quality as a resist.

• 한국연소학회:학술대회논문집
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• 2014.11a
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• pp.383-386
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• 2014

The characteristics of gas free jet flows in laminar with having applied electric fields have been investigated experimentally. A single electrode configuration was adopted such that electric fields were applied directly to nozzle and thus the surrounding could be an infinite ground. The experimental results showed that breakdown point at laminar flow has been measured by varying the applied voltage and frequency of AC. The effect of applying electric fields to free jet flow in laminar was discussed in detail.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1096-1100
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• 2008

This report examines the variations on structural properties of $SnO_2$ thin films deposited by using thermal chemical vapor deposition techniques with different oxygen flow gas. TEM showed some of the interface to be atomically rough. The aspects of the boundary shape and growth behavior agree well with the theory of interface growth. The electron diffraction showed that the roughness was changed as the different oxygen flow gas increased. These measurement results suggested that the number of interface facet and abnormal grain growth were related oxygen flow gas.

• Corrosion Science and Technology
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• v.7 no.1
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• pp.61-67
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• 2008

In this paper, electrochemical and microstructural characteristics of nickel-plated Alloy 600 were investigated in order to identify the performance of electroless Ni-plating on Alloy 600 in high-temperature aqueous condition with the comparison of electrolytic nickel-plating. For high temperature corrosion test of nickel-plated Alloy 600, specimens were exposed for 770 hours to typical PWR primary water condition. During the test, open circuit potentials (OCP's) of all specimens were measured using a reference electrode. Also, resistance to flow accelerated corrosion (FAC) test was examined in order to check the durability of plated layers in high-velocity flow environment at high temperature. After exposures to high flow rate aqueous condition, the integrity of surfaces was confirmed by using both scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). For the field application, a remote process for electroless nickel-plating was demonstrated using a plate specimen with narrow gap on a laboratory scale. Finally, a practical seal design was suggested for more convenient application.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.358-358
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• 2012

The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

• Journal of Microbiology and Biotechnology
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• v.2 no.4
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• pp.248-254
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• 1992

The initial growth of Clostridium acetobutylicum was not inhibited by 1 atm of H$_2$ while H$_2$ reduced glucose consumption in a solventogenic culture of a phosphate limited 2-stage chemostat. Under 1 atm of H$_2$, a solventogenic culture consumed hydrogen, but an acidogenic culture produced hydrogen. H$_2$ consumption by the solventogenic culture was enhanced by the addition of 5 mM neutral red, an artificial electron carrier with a redox potential of -325 mV. Hydrogenase activity, measured in both directions of production and consumption, showed that activity coupled with methyl viologen is higher in an acidogenic culture than in a solventogenic culture, and that the two cultures have similar activities for methylene blue reduction. The solventogenic culture showed a higher activity coupled with neutral red than the acidogenic culture. From these results, it is hypothesized that hydrogen producing hydrogenase activity is high during the acidogenic phase, and decreases as solventogenesis starts, and that the solventogenic culture produces a second hydrogenase which uses an electron carrier other than ferredoxin. This hypothesis was supported by the fact that enzyme activities involved in electron flow can be coupled to neutral red, indepedent of ferredoxin, and that neutral red addition to the fermentation system increased butanol yield, with a decrease in production of less reduced fermentation products, and $H^2$.

• Journal of Astronomy and Space Sciences
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• v.27 no.4
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• pp.319-327
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• 2010

We examine the ionospheric F2-layer electron density variation by solar activity in middle latitude by using foF2 observed at the Kokubunji ionosonde station in Japan for the period from 1997 to 2008. The semi-annual variation of foF2 shows obviously in high solar activity (2000-2002) than low solar activity (2006-2008). It seems that variation of geomagnetic activity by solar activity influences on the semi-annual variation of the ionospheric F2-layer electron density. According to the Lomb-Scargle periodogram analysis of foF2 and Ap index, interplanetary magnetic field (IMF) Bs (IMF Bz <0) component, solar wind speed, solar wind number density and flow pressure which influence the geomagnetic activity, we examine how the geomagnetic activity affects the ionospheric F2-layer electron density variation. We find that the semi-annual variation of daily foF2, Ap index and IMF Bs appear clearly during the high solar activity. It suggests that the semi-annual variation of geomagnetic activity, caused by Russell-McPherron effect, contributes greatly to the ionospheric F2-layer semi-annual electron density variation, except dynamical effects in the thermosphere.