• Korean Chemical Engineering Research
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• v.55 no.3
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• pp.279-286
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• 2017

This review paper evaluates different kinds of synthesis methods for calcite precipitated calcium carbonates by using different materials. The various processing routes of calcite with different compositions are reported and the possible optimum conditions required to synthesize a desired particle sizes of calcite are predicted. This paper mainly focuses on that the calcite morphology and size of the particles by carbonation process using loop reactors. In this regard, we have investigated various parameters such as $CO_2$ flow rate, Ca $(OH)_2$ concentration, temperature, pH effect, reaction time and loop reactor mechanism with orifice diameter. The research results illustrate the formation of well-defined and pure calcite crystals with controlled crystal growth and particle size, without additives or organic solvents. The crystal growth and particle size can be controlled, and smaller sizes are obtained by decreasing the Ca $(OH)_2$ concentration and increasing the $CO_2$ flow rate at lower temperatures with suitable pH. The crystal structure of obtained calcite was characterized by using X-ray diffraction method and the morphology by scanning electron microscope (SEM). The result of x-ray diffraction recognized that the calcite phase of calcium carbonate was the dominating crystalline structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.393-394
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• 2008

Carbon nanotubes are attractive nano-structured materials because of their remarkable electronic, physical, chemical properties. Due to these reasons, application researches of CNTs are actively processed on the display, the electronic element, the nano-diode fields and the semiconductor element. Today, The major issue of semiconductor technique are via and interconnects. CNTs are used to make via and interconnects because of high electric currents density and high heat transfer. Control of the orientation of grown CNTs is very important thing for making via and interconnects. Via are horizontal growth of CNTs and interconnects are vertical growth of CNTs. This research is based on the experiment using control of gas flow directions and DC bias. Scanning Electron Microscope (SEM) was used to check this experiment.

• Journal of Mechanical Science and Technology
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• v.19 no.11
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• pp.2068-2076
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• 2005

The influence of oxygen concentration and CO$_{2}$ as diluent in oxidizer side on soot characteristics was studied by Laser Induced Incandescence, Time Resolved LII and Transmission Electron Microscopy photography in non-premixed co flowing flames. Through the comparison of TEM photographs and the decay rate of LII signal, suitable two delay times of TIRE-LII method and signal sensitivity ($\Delta$S$_{TIRE-LII/) were determined. The effects of O$_{2}$ and CO$_{2}$ as diluent in oxidizer side on soot formation are investigated with these calibrated techniques. The O$_{2}$+CO$_{2}$, N$_{2}$, and [Ar+CO$_{2}$] mixture in co-flow were used to isolate CO2 effects systematically. The number concentration of primary particle and soot volume fraction abruptly decrease by the addition of CO$_{2}$ to the co-flow. This suppression is resulted from the short residence time in inception region because of the late nucleation and the decrease of surface growth distance by the low flame temperature due to the higher thermal capacity and the chemical change of CO$_{2}$ including thermal dissociation. As the oxygen concentration increases, the number concentration of soot particles at the inception region increases and thus this increase of nucleation enhances the growth of soot particle.

• Journal of Mechanical Science and Technology
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• v.15 no.12
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• pp.1808-1815
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• 2001

The characteristics of a pulsed plasma jet originating from an electrothermal capillary discharge have been investigate using laser-induced fluorescence (LIF) measurement. Previous emission measurements of a 3.1 kJ plasma jet show trial upstream of the Mach disk the temperature and electron number density are about 14,000 K and and 10$\^$17/ cm$\^$-3/, while downstream of the Mach dick tole values are about 25,000 K and 10$\^$18/ cm$\^$-3/, respectively. However, these values are barred on line-of-sight integrated measurements that may be misleading. Hence, LIF is being used to provide both spatially and temporally resolved measurements. Our recent work has been directed at using planar laser-induced fluorescence (PLIF) imaging of atomic copper in the plasma jet flow field. Copper is a good candidate for PLIF studies because it is present throughout the plasma and has electronic transitions that provide an excellent pump-detect strategy. Our PLIF results to date show that emission measurements may give a misleading picture of the flow field, as there appeals to be a large amount of relatively low temperature copper outside the barrel shock. which may lead to errors in temperature inferred from emission spectroscopy. In this paper, the copper LIF image is presented and at the moment, relative density of atomic copper, which is distributed in the upstream of the pulsed plasma jet, is discussed qualitatively.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.25-28
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• 2001

In this paper, we have investigated the effects of gas flow rate, rf power, process pressure and Ar addition on reactive ion etching of InP, InGaAs and InAlAs using Sic14 and Cl$_2$ gases. The etch rates were measured by using a surface profiler. The etched profiles, sidewall roughness, and surface morphology were observed by scanning electron microscopy and by atomic force microscopy. The selective etching of InGaAs to InP and InAlAs was studied by varying the etching parameters. It was found that Cl$_2$ gas is more efficient for the selective etching of InGaAs to InAlAs than SiCl$_4$ gas. The etch selectivity of InGaAs to InAlAs is strongly dependent on the rf power and the process pressure.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.68-77
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• 1995

Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.247-250
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• 2001

We studied optical properties of SiON thin-film in the applications of optical waveguide. SiON thin-film was grown in $300^{\circ}C$ by PECVD(plasma enhanced chemical vapor deposition) system. The change of SiON thin-film composition and refractive Index was studied as a function of varying $NH_3$ gas flow rate. As $NH_3$ gas flow rate was increased, Quantity of N and refractive index were increased at the same time. By the results, we could form the SiON thin-film to use of a waveguide with refractive index of 1.6. We analyzed the conditions of the thin-film with FTIR(fourier transform infrared) and OES (optical emission spectroscopy). N-H bonding($3390cm^{-1}$ ) can be removed by thermal annealing. And we could observe the SiH bonding state and quantity by OES analysis in $SiH_4$

• Journal of Surface Science and Engineering
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• v.41 no.2
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• pp.43-47
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• 2008

Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

• Journal of the Korean Ceramic Society
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• v.50 no.5
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• pp.341-347
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• 2013

Kaolin-based membranes with a pore size of 0.30-0.40 ${\mu}m$ were successfully prepared by a simple pressing route using low-cost starting materials, kaolin and sodium borate. The prepared green bodies were sintered at different temperatures ranging between 900 and $1200^{\circ}C$. The sintered membranes were characterized by X-ray diffraction, mercury porosimetry, scanning electron microscopy, and capillary flowmetry. It was observed that the porosity decreased with an increase in both the sintering temperature and the sodium borate content, whereas the flexural strength increased with an increase in both the sintering temperature and the sodium borate content. The air flow rate decreased with an increase in the sodium borate content. The typical porosity, flexural strength, and specific flow rate of the kaolin-based membrane sintered with 5 wt% sodium borate at $1100^{\circ}C$ were 37%, 19 MPa, and $1{\times}10^{-3}L/min/cm^2$, respectively, at a p of 30 psi.

• Journal of Welding and Joining
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• v.15 no.6
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• pp.57-65
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• 1997

A study was undertaken to determine the influence of welding variables such as shielding and plasma gases, torch standoff, travel speed and heat input, etc. on the quality of plasma arc welds in Zircaloy-4 sheet, 2mm thick. Effect of shielding gases and their flow rates on the mechanical properties of Zircaloy-4 welds by plasma arc welding were determined in terms of tensile, bardness and bend tests. The microstructure and fracture surface of Zircaloy-4 welds were investigated by optical and scanning electron microscopies. In addition, the causes of porosity and undercut in plasma arc welds of Zircaloy-4 were also investigated. Zircaloy-4 weld bead width and depth by helium shielding gas showed a wider and deeper than those by argon. It was found that Zircaloy-4 welds with shielding gas of helium did dxhibit a little smoother and uniform weld beads than those with shielding gas of argon. It was also found that the optimum gas flow rates for Zircaloy-4 welding were 0.45l/min for plasma gas with Ar and 4.5 - 6 l/min for shielding gas with He. In addition, there was no big difference in the microstructure and fracture surface of the weld metals made by either Ar shielding gas or He shielding gas.