Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Reactive Ion Etching of InP, InGaAs and InAIAs by SiCl$_4$ and Cl$_2$ Gases: Effects of Gas Flow Rate, rf Power, Process Pressure and Ar Addition

SiCl$_4$와 Cl$_2$가스에 의한 InP, InGaAs 및 InAIAs의 반응성 이온 식각: 가스유량, rf 전력, 공정압력, Ar 첨가의 영향

  • 유재수 (광주과학기술원 정보통신공학과) ;
  • 송진동 (광주과학기술원 정보통신공학과) ;
  • 배성주 (광주과학기술원 정보통신공학과) ;
  • 정지훈 (광주과학기술원 정보통신공학과) ;
  • 이용탁 (광주과학기술원 정보통신공학과)
  • Published : 2001.06.01
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Abstract

In this paper, we have investigated the effects of gas flow rate, rf power, process pressure and Ar addition on reactive ion etching of InP, InGaAs and InAlAs using Sic14 and Cl$_2$ gases. The etch rates were measured by using a surface profiler. The etched profiles, sidewall roughness, and surface morphology were observed by scanning electron microscopy and by atomic force microscopy. The selective etching of InGaAs to InP and InAlAs was studied by varying the etching parameters. It was found that Cl$_2$ gas is more efficient for the selective etching of InGaAs to InAlAs than SiCl$_4$ gas. The etch selectivity of InGaAs to InAlAs is strongly dependent on the rf power and the process pressure.

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