• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.6
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• pp.241-245
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• 2003

ZnO thin films on (l00) p-type Si and sapphire substrates have been deposited by a pulsed laser deposition technique using an Nd:YAG laser with a wavelength of 266 nm. The influence of the deposition parameters such as oxygen pressure, substrate temperature and laser energy density on the properties of the grown films was studied. The experiments were performed for substrate temperatures in the range of 200∼50$0^{\circ}C$ and oxygen pressure in the range of 100∼700 sccm. All of the films grown in this experiment show strong c-axis orientation with (002) textured ZnO peak. With increasing substrate temperature, the FWHM (full width at half maximum) and surface roughness were decreased. In the case of using sapphire substrate, the intensity of PL spectra increased with increasing ambient oxygen flow rate. We investigated the structural and morphological properties of ZnO thin films using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM).

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1183-1185
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• 1993

The plasma polymerized thin film of MMA+Sty was prepared using a capacitively coupled gas-flow-type reactor. This thin films were also delincated by the electron-beam apparatus with an acceleration voltage 30KV, and the pattern in the resist was developed with the gas-flow-type reactor using an argon as an etchant. The effect of discharge power on groth rate and etching rate of the thin film were studied. The molacular structure of the resist was investigated by ESCA and FT-IR.

• Bulletin of the Korean Chemical Society
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• v.12 no.1
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• pp.75-79
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• 1991

A series of compounds, N-(2-substituted-1-carboxy)vinylazetidinones were successfully synthesized in order to test the hypothesis that biological activities of ${\beta}$-lactam antibiotics could be attributed to the smooth flow of electrons after a nucleophilic attack at the carbonyl carbon in the ${\beta}$-lactam ring. After introduction of aminothiazolylacetamido group at 3-position of the azetidinones, their biological activities were evaluated. Their low activities led to the conclusion that the smooth electron flow in ${\beta}$-lactams in not the sufficient source for the biological activities.

• Journal of IKEEE
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• v.23 no.3
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• pp.1033-1037
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• 2019

GaN-based sensors have been widely investigated thanks to its potential in detecting the presence of hydrogen. In this study, we fabricated hydrogen gas sensors with AlGaN/GaN heterojunction and investigated how the sensing performance to be affected by SiN surface passivation. The gas sensor employed a high electron mobility transistors (HEMTs) with 30 nm platinum catalyst as a gate to detect the hydrogen presence. SiN layer was deposited by inductively-coupled chemical vapor deposition as post-passivation. The sensors with SiN passivation exhibited hydrogen sensing characteristics with various gas flow rates and concentrations of hydrogen in inert background gas at $200^{\circ}C$ similar to the ones without passivation. Aside from quick response time for both sensors, there are differences in sensitivity and recovery time because of the existence of the passivation layer. The results also confirmed the dependence of sensing performance on gas flow rate and gas concentration.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.168-173
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• 2013

In this paper, we would like to introduce Electron Relay Enhancer (ERE), a supplementary device, which improves commercial solar cell efficiency minimizing electron-hole recombination of solar cell. The ERE in this study is mainly composed of two capacitors which are connected to AC power source and bridge diode system which controls electron flow direction. Two capacitors repeat collecting electrons from solar cell and pumping the collected electrons to load resistance or inverter through the bridge diode system. While one positively charged capacitor collect electrons, the other negatively charged one pumps electrons. A positively charged capacitor pulls the more exited electrons from the solar cell, before the exited electrons recombine the holes in solar cell. That is why the ERE system enhances solar cell efficiency. As a result, the measured power increase of the solar cell with the ERE is varied from 5.9 W to 25.6 W in each experimental condition. Maximal increase rate of the solar cell power with ERE is 30.8% of solar cell power without ERE.

• Corrosion Science and Technology
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• v.15 no.4
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• pp.182-188
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• 2016

Significant piping wall thinning caused by Flow-Accelerated Corrosion (FAC) and Erosion-Corrosion (EC) continues to occur, even after the Mihama Power Station unit 3 secondary pipe rupture in 2004, in which workers were seriously injured or died. Nuclear power plants in many countries have experienced FAC and EC-related cases in steam cycle piping systems. Korea has also experienced piping wall thinning cases including thinning in the downstream straight pipe of a check valve in a feedwater pump line, the downstream elbow of a control valve in a feedwater flow control line, and failure of the straight pipe downstream of an orifice in an auxiliary steam return line. Cause analyses were performed by reviewing thickness data using Ultrasonic Techniques (UT) and, Scanning Electron Microscope (SEM) images for the failed pipe, and numerical simulation results for FAC and EC cases in Korea Nuclear Power Plants. It was concluded that the main cause of wall thinning for the downstream pipe of a check valve is FAC caused by water vortex flow due to the internal flow shape of a check valve, the main cause of wall thinning for the downstream elbow of a control valve is FAC caused by a thickness difference with the upstream pipe, and the main cause of wall thinning for the downstream pipe of an orifice is FAC and EC caused by liquid droplets and vortex flow. In order to investigate more cases, additional analyses were performed with the review of a lot of thickness data for inspected pipes. The results showed that pipe wall thinning was also affected by the operating condition of upstream equipment. Management of FAC and EC based on these cases will focus on the downstream piping of abnormal or unusual operated equipment.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.287-292
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• 2010

We have investigated the effects of oxygen flow ratios on the structural, morphological, and optical properties of AlN thin films grown by using radio-frequency reactive magnetron sputtering. The AlN thin films were deposited at $300^{\circ}C$ of substrate temperature, and the reactive gas were supplied with both nitrogen and oxygen. The oxygen flow ratio was varied by controlling the amount of oxygen with respect to the total mixed gases, 0%, 10%, 15%, 20%, 25%, and 30%. The structural, morphological, and optical properties of the deposited AlN thin films were examined by using X-ray diffractometer, scanning electron microscopy, and ultraviolet-visible spectrophotometer. The AlN thin film grown at 10% of oxygen flow ratio indicated an average transmittance of 91.3% in the wavelength range of 350~1,100 nm and an optical band gap of 4.30 eV. The experimental results suggest that AlN thin films can be deposited optionally by varying the oxygen flow ratio.

• Corrosion Science and Technology
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• v.12 no.5
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• pp.227-232
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• 2013

A number of components installed in the secondary system of nuclear power plants are exposed to aging mechanisms such as FAC (Flow-Accelerated Corrosion), Cavitation, Flashing, and LDIE (Liquid Droplet Impingement Erosion). Those aging mechanisms can lead to thinning of the components. In April 2013, one (1) inch small bore piping branched from the main steam line experienced leakage resulting from wall thinning in a 1,000 MWe Korean PWR nuclear power plant. During the normal operation, extracted steam from the main steam line goes to condenser through the small bore piping. The leak occurred in the downstream of an orifice. A control valve with vertical flow path was placed on in front of the orifice. This paper deals with UT (Ultrasonic Test) thickness data, SEM images, and numerical simulation results in order to analyze the extent of damage and the cause of leakage in the small bore piping. As a result, it is concluded that the main cause of the small bore pipe wall thinning is liquid droplet impingement erosion. Moreover, it is observed that the leak occurred at the reattachment point of the vortex flow in the downstream side of the orifice.

• Journal of the Korean Wood Science and Technology
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• v.22 no.1
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• pp.85-90
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• 1994

The flow properties of binder latices for paper coating were investigated, together with dynamic viscoelastic properties of latex films and electron micrographs of latices, under various conditions. The amphoteric latex, binder pigment latex and anionic latex were used in this work. The amphoteric latex has both anionic and cationic functional group on its surface. The binder-pigment with a core-shell structure has dual functions : plastic pigment and binder. The low shear viscosity of binder latices and clay slurry were measured with Brookfield vis cometer. At low-shear rates. the viscosity decreased with increasing particle size of latex. On the amphoteric latex surface, the carboxyl groups are assumed to be fully dissociated over the region of pH 9~12, but the density of negative groups seems to be increased because of the gradual decrease in the degree of dissociation of amino groups. Since the apparent particle size of latex increases with surface charge, the electroviscous effect can be observed. On the anionic latex surface, the charge density is assumed to be nearly constant above pH 8. However, below pH 8 the coagulation of particles could be observed probably because of the decrease in the charge density.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.953-957
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• 2002

Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; ｛CH$_{3}$｝$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).