• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 학술대회 논문집 전문대학교육위원
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• pp.159-162
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• 2006

In this paper energy distribution function in $SiH_4$ has been analysed over the E/N range 0.5${\sim}$300Td and Pressure value 0.5, 1.0, 2.5 Torr by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50Td for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values.

• 조명전기설비학회논문지
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• 제22권8호
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• pp.104-108
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• 2008

플라즈마 현상의 정량적 이해를 위해서는 원자나 분자기체가 가지고 있는 정확한 전자충돌단면적과 그 전자수송 계수의 값을 필요로 한다. 본 연구에서 사용하고 있는 Kr과 Xe 원자기체는 PDP와 무전각램프 등 다양한 산업 응용분야에 이용되고 있다. 따라서 2항 근사 볼츠만 해석에 의해 기체압력 1[torr]의 조건에 $0.001{\sim}500$[Td]의 광범위한 E/N에서 순수 Kr과 Xe 원자기체의 전자이동속도 W, 종 횡축확산계수 $ND_L$과 $ND_T$, 전리계수 $\alpha$/N의 전자수송 계수를 계산하고 물성 해석하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1402_1403
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• 2009

The electron transport coefficients in hydrogen molecular is calculated over the range of E/N values from 0.01 to 300 Td and at temperature state of 77K, 293K and 300K by Boltzmann equation method. The results gained that the values of the electron transport coefficients such as the electron drift velocity, the electron ionization coefficients, longitudinal diffusion coefficients consisted with the results of measured and calculated for a ranage of E/N.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.168-172
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• 2003

The electron transport coefficients in Air is analysed in range of E/Nvalues from 100~1000(Td) by a MCS and BE method. This paper have calculated W, ND$\sub$L/, ND$\sub$T/, Mean energy mixtures by N$_2$+O$_2$. The results gained that the values of the electron swarm parameters such as the electron drift velocity, longitudinal and transverse diffusion coefficients.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.155-158
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• 1998

This paper is calculated at electron swarm simulation by Back Prolongation of Boltzmann equation for range of E/N values from 0.1~200[Td], pressure P= 1.0[Torr], temperature T=300[ 。K], the electron swarm parameter(drift velocity, longitudinal . transverse diffusion coefficients, characteristic energy, etc) in He gas is used by electron collision cross section, particularly explicate the simulation technique, and consider electrical conduction characteristic of He gas.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.375-380
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• 2005

CF₄ molecular gas is used in most of semiconductor manufacture processing and SF/sub 6/ molecular gas is widely used in industrial of insulation field. but both of gases have defect in global warming. C₃F/sub 8/ gas has large attachment cross-section more than these gases, moreover GWP, life-time and price of C₃F/sub 8/ gas is lower than them, therefor it is important to calculate transport coefficients of C₃F/sub 8/ gas like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient and critical E/N. The aim of this study is to get these transport coefficients for imformation of the insulation strength and efficiency of etching process. In this paper, we calculated the electron drift velocity (W) in pure C₃F/sub 8/ molecular gas over the range of E/N=0.1∼250 Td at the temperature was 300 K and gas pressure was 1 Torr by the Boltzmann equation method. The results of this paper can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas.

• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1252-1257
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• 2004

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients by using two-term approximation of Boltzmann equation. But there is difference between the result of the two-term approximation of the Boltzmann equation and experiments in pure CF$_4$ molecular gas and in CF$_4$+Ar gas mixture. Therefore, In this paper, we calculated the electron drift velocity (W) in pure CF$_4$ molecular gas and CF$_4$+Ar gas mixture (1 %, 5 %, 10 %) for range of E/N values from 0.17～300 Td at the temperature was 300 K and pressure was 1 Torr by multi-term approximation of the Boltzmann equation by Robson and Ness. The results of two-term and multi-term approximation of the Boltzmann equation have been compared with each other for a range of E/N.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1179-1182
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• 2004

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients in $CF_4+Ar$ gas mixture by using two-term approximation of Boltzmann equation. but there is difference between the result of the two-term and the multi-term approximation of the Boltzmann equation in $CF_4$ gas. Therefore, in this paper, we calculated the electron drift velocity (W) in $CF_4+Ar$ gas mixture for range of E/N values from $0.01\sim500[Td}$ at the temperature was 300[K] and pressure was 1[Torr] by multi-term approximation of the Boltzmann equation by Robson and Ness. The results of two-term and multi-term approximation of the Boltzmann equation has been compared with each other for a range of E/N.

• Transactions on Electrical and Electronic Materials
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• 제18권1호
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• pp.7-12
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• 2017

This work takes place in the context of the development of a transport phenomena simulation based on group III nitrides. Gallium and boron nitrides (GaN and BN) are both materials with interesting physical properties; they have a direct band gap and are relatively large compared to other semiconductors. The main objective of this paper is to study the effect of boron content on the electron transport of the ternary compound $B_xGa_{(1-x)}N$ and the effect of the temperature of this alloy at x=50% boron percentage, specifically the piezoelectric, acoustic, and polar optical scatterings as a function of the energy, and the electron energy and drift velocity versus the applied electric field for different boron compositions ($B_xGa_{(1-x)}N$), at various temperatures for $B_{0.5}Ga_{0.5}N$. Monte carlo simulation, was employed and the three valleys of the conduction band (${\Gamma}$, L, X) were considered to be non-parabolic. We focus on the interactions that do not significantly affect the behavior of the electron. Nevertheless, they are introduced to obtain a quantitative description of the electronic dynamics. We find that the form of the velocity-field characteristic changes substantially when the temperature is increased, and a remarkable effect is observed from the boron content in $B_xGa_{(1-x)}N$ alloy and the applied field on the dynamics of holders within the lattice as a result of interaction mechanisms.

• 전기학회논문지P
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• 제60권1호
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• pp.27-31
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• 2011

In this paper, the electron transport characteristics in $CF_4$ has been analysed over the E/N range 1~300[Td] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal diffusion coefficient, the ratio of the diffusion coefficient to the mobility, electron ionization and attachment coefficients, effective ionization coefficient, mean energy, collision frequency and the electron energy distribution function. The electron energy distribution function has been analysed in $CF_4$ at E/N=5, 10, 100, 200 and 300[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte Carlo simulation have been compared with experimental data by Y. Nakamura and M. Hayashi. The swarm parameter from the swarm study are expected to serve as a critical test of current theories of low energy electron scattering by atoms and molecules, in particular, as well as crucial information for quantitative simulations of weakly ionized plasmas.