• Journal of electromagnetic engineering and science
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• v.17 no.3
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• pp.147-152
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• 2017

This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation frequency ($f_{max}$) of the given transistor technology. A common-source transistor is biased on class-B to obtain sufficient output power at the second harmonic frequency. The input and output impedances are matched to achieve high output power and high return loss. The frequency doubler is fabricated in a commercial 150-nm GaAs pHEMT process and obtains a measured conversion gain of -5.5 dB and a saturated output power of -7.5 dBm at 184 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.7
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• pp.677-684
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• 2004

This paper presents direct T $M_{01}$-T $E_{11}$ small mode converter using circular waveguide with tilted structure for X-band high power system. It is designed to transmit microwave energy from Relativistic Backward-Wave Oscillator(RBWO) source to hem antenna effectively, with optimized geometry a parameter study The simulated and measured results of return loss, fractional power of each mode, impedance bandwidth and mode pattern are provided.d.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.111-114
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• 2005

The isolation performance of the S-band single-pole single-throw (SPST) monolithic microwave integrated circuit (MMIC) switch with two different RF-interconnection approaches, microstrip and grounded coplanar waveguide (GCPW) lines, are investigated. On-to-off isolation is improved by 5.8 dB with the GCPW design compared with the microstrip design and additional improvement of 6.9dB is obtained with the coplanar wire-bond interconnection (CWBI) at 3.4 GHz. The measured insertion loss and third-order inter-modulation distortion (IMD3) are less than 2.43 dB over 2.5 CHz $\sim$ 4 GHz and greater than 64 dBc.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.303-306
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• 2005

In this paper, a CPW-fed monopole antenna using inverted L-type DGS structures is proposed and investigated experimentally. The proposed antenna is fabricated into FR4 substrate with dielectric constant($\varepsilon$r=4.5). Measured results show that the impedance bandwidth, determined from 10-dB return loss, for frequencies between 5.7250Hz-5.825CHz under the condition of VSWR$\leqq$2 is about 540MHg.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.39-44
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• 2005

A broadband DC to 40 GHz 5-bit MMIC digital attenuator has been developed. The ultra broadband attenuator has been achieved by newly inserted the transmission lines in conventional Switched-T attenuator and the optimization of the transmission line parameters. Momentum was employed in design for an accurate performance prediction at high frequencies and Monte Carlo analysis was applied to verify performance stability against the MMIC process variation. The attenuator has been fabricated with 0.15 $\mu$m GaAs pHEMT process. This attenuator has 1 dB resolution and 23 dB dynamic range. High attenuation accuracy has been achieved over all attenuation range and full 40 GHz bandwidth with the reference state insertion loss of less than 6 dB at 20 GHz. The input and output return losses of the attenuator are better than 14 dB over all attenuation states and frequencies.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.245-248
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• 2005

In this paper, small sized half-wavelength circular loop antenna which attached beneath a visor of helmet is designed and fabricated at the resonant frequency of 449MHz. To reduce the size of the antenna, double series-shorted stubs are inserted inside the loop for practical use of a vacant space of loop inside. Also, It is designed for the printed type to install the helmet easily. The size of antenna on helmet is reduced to 87.75%(diameter : 70mm, height :.36mm) compare with general type antenna(diameter : 200mm height 101mm). The return loss, -10dB bandwidth and gain are -13.2dB, 17.6MHz(3.9%), and -1.78dBd. And, radiation pattern is omni-directional pattern at H-plane. Therefore, it can be seen that the half-wavelength circular loop antenna using double series-shorted stubs is proper structure for the miniaturization and the installed antenna of the helmet.

• Journal of electromagnetic engineering and science
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• v.12 no.1
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• pp.20-25
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• 2012

In this paper, the EM wave absorber for ETC system was designed and fabricated. We fabricated several samples in different composition ratios of flaked sendust and CPE(Chlorinated Polyethylene). Absorption abilities were simulated in accordance with different thicknesses of the prepared absorbers and changed complex relative permittivity and permeability according to composition ratio. The optimized mixing ratio of flaked sendust and CPE was found as 60 : 40 wt.% by experiments and simulation. Then the EM wave absorber was fabricated and tested using the simulated data. As a result, the developed EM wave absorber has the thickness of 2.75 mm and absorption ability was 22.5 dB in the case of normal incidence at 5.8 GHz. Therefore, it was confirmed that the newly developed absorber can be used for ETC system.

• Journal of electromagnetic engineering and science
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• v.8 no.3
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• pp.91-95
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• 2008

This paper presents a direct-conversion I/Q up-mixer block, which supports $3{\sim}5$ GHz ultra-wideband(UWB) applications. It consists of a VI converter, a double-balanced mixer, a RF amplifier, and a differential-to-single signal converter. To achieve wideband characteristics over $3{\sim}5$ GHz frequency range, the double-balanced mixer adopts a shunt-peaking load. The proposed RF amplifier can suppress unwanted common-mode input signals with high linearity. The proposed direct-conversion I/Q up-mixer block is implemented using $0.18-{\mu}m$ CMOS technology. The measured results for three channels show a power gain of $-2{\sim}-9$ dB with a gain flatness of 1dB, a maximum output power level of $-7{\sim}-14.5$ dBm, and a output return loss of more than - 8.8 dB. The current consumption of the fabricated chip is 25.2 mA from a 1.8 V power supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.296-303
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• 2003

In this paper, a design method is proposed for the reflection type phase shifter applied to the DTV(Digital TV) receiver, and a phase shifter is designed by using the design equations to satisfy the phase shifting range over 180 degrees for frequency range from 470 MHz to 860 MHz, the receiving band of DTV. From the proposed method, it is possible that the systematic design of the reflection type phase shifter with desired phase shifting range and insertion loss. In addition, it is found that the realized phase shifter satisfies the given specifications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.6
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• pp.625-629
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• 2003

Low loss and high power MMIC limiters with GaAs PM diode were designed and fabricated. The new epitaxial structure of GaAs PIN diode was proposed in order to increase the high power capability. 2 types of limiter circuits have been designed and the limiting powers have been measured. Results indicated that the limiting power was depended on the circuit topology. Limiting power levels of 2-stage limiters are measured 16 ㏈m and 22 ㏈m at 14 ㎓, respectively.