• Korean Journal of Materials Research
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• v.31 no.11
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• pp.614-618
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• 2021

As the size of market for electric vehicles and energy storage systems grows, the demand for lithium-ion batteries (LIBs) is increasing. Currently, commercial LIBs are fabricated with liquid electrolytes, which have some safety issues such as low chemical stability, which can cause ignition of fire. As a substitute for liquid electrolytes, solid electrolytes are now being extensively studied. However, solid electrolytes have disadvantages of low ionic conductivity and high resistance at interface between electrode and electrolyte. In this study, Li₇La₃Zr₂O₁₂ (LLZO), one of the best ion conducting materials among oxide based solid electrolytes, is fabricated through RF-sputtering and various electrochemical properties are analyzed. Moreover, the electrochemical properties of LLZO are found to significantly improve with co-sputtered Li₂O. An all-solid thin film battery is fabricated by introducing a thin film solid electrolyte and an Li₄Ti₅O₁₂ (LTO) cathode; resulting electrochemical properties are also analyzed. The LLZO/Li₂O (60W) sample shows a very good performance in ionic conductivity of 7.3×10^-8 S/cm, with improvement in c-rate and stable cycle performance.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.73-79
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• 2022

In this study, a reaction study between Ga, which has recently been spotlighted as a low-temperature bonding material, and Cu, a representative electrode material, was conducted to investigate information necessary for low-temperature soldering applications. Interfacial reaction and intermetallic compound (IMC) growth were observed and analyzed by reacting Ga and Cu/Au substrates in the temperature range of 80-200℃. The main IMC growing at the reaction interface was CuGa₂ phase, and AuGa₂ IMC with small particle sizes was formed on the upper part and Cu₉Ga₄ IMC with a thin band shape on the lower part of the CuGa₂ layer. CuGa₂ particles showed a scallop shape, and the particle size increased without significant shape change as the reaction time increased, similar to the case of Cu₆Sn₅ growth. As a result of analyzing the CuGa₂ growth mechanism, the time exponent was calculated to be ~3.0 in the temperature range of 120-200℃, and the activation energy was measured to be 17.7 kJ/mol.

• Journal of Electrochemical Science and Technology
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• v.13 no.3
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• pp.362-368
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• 2022

The application of polymer composite electrolyte in all-solid-state lithium-sulfur battery (ASSLSBs) can guarantee high energy density and improve the interface contact between electrolyte and electrode, which has a broader application prospect. However, the inherent insulation of the sulfur-cathode leads to a low electron/ion transfer rate. Carbon materials with high electronic conductivity and electrolyte materials with high ionic conductivity are usually selected to improve the electron/ion conduction of the composite cathode. In this work, PEO-LiTFSI-LLZO composite polymer electrolyte (CPE) with high ionic conductivity was prepared. The ionic conductivity was 1.16×10^-4 and 7.26×10^-4 S cm^-1 at 20 and 60℃, respectively. Meanwhile, the composite sulfur cathode was prepared with Sulfur, reduced graphene oxide and composite polymer electrolyte slurry (S-rGO-CPEs). In addition to improving the ion conductivity in the cathode, CPEs also replaces the role of binder. The influence of different contents of CPEs in the cathode material on the performance of the constructed battery was investigated. The results show that the electrochemical performance of the all-solid-state lithium-sulfur battery is the best when the content of the composite electrolyte in the cathode is 40%. Under the condition of 0.2C and 45℃, the charging and discharging capacity of the first cycle is 923 mAh g^-1, and the retention capacity is 653 mAh g^-1 after 50 cycles.

• New & Renewable Energy
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• v.18 no.1
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• pp.29-34
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• 2022

The most prevalent cause of solar cell efficiency loss is reduced recombination at the metal electrode and silicon junction. To boost efficiency, a a SiO_X/poly-Si passivating interface is being developed. Poly-Si for passivating contact is formed by various deposition methods (sputtering, PECVD, LPCVD, HWCVD) where the ploy-Si characterization depends on the deposition method. The sputtering process forms a dense Si film at a low deposition rate of 2.6 nm/min and develops a low passivation characteristic of 690 mV. The PECVD process offers a deposition rate of 28 nm/min with satisfactory passivation characteristics. The LPCVD process is the slowest with a deposition rate of 1.4 nm/min, and can prevent blistering if deposited at high temperatures. The HWCVD process has the fastest deposition rate at 150 nm/min with excellent passivation characteristics. However, the uniformity of the deposited film decreases as the area increases. Also, the best passivation characteristics are obtained at high doping. Thus, it is necessary to optimize the doping process depending on the deposition method.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.30 no.1
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• pp.52-59
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• 2008

The geometric design of an implant surface may play an important role in affecting early osseointegration. It is well known that the porous surfaced implant had much benefits for the osseointegration and the early stability of implant. However, the porous surfaced implant had weakness from the transgingival contamitants, and it resulted in alveolar bone loss. The other problem identified with porous surface implant is the loss of physical properties resulting from the bead sintering process. In this study, we developed the new bead coating implant to overcome the disadvantages of porous surfaced implant. Ti-6Al-4V beads were supplied from STARMET (USA). The beads were prepared by a plasma rotating electrode process (PREP) and had a nearly spherical shape with a diameter of 75-150 ${\mu}m$. Two types of titanium implants were supplied by KJ Meditech (Korea). One is an external hexa system (External type) and the other is an internal system with threads (Internal type). The implants were pasted with beads using polyvinylalcohol solution as a binder, and then sintered at 1250 $^{\circ}C$ for 2 hours in vacuum of $10^{-5}$ torr. The resulting porous structure was 400-500 ${\mu}m$ thick and consisted of three to four bead layers bonded to each other and the implant. The pore size was in the range of 50-150 ${\mu}m$ and the porosity was 30-40 % in volume. The aim of this study was to evaluate the osseointegration of the newly developed dental implant. The experimental implants (n=16) were inserted in the unilateral femur of 4 mongrel dogs. All animals were killed at 8 weeks after implantation, and samples were harvested for hitological examination. All bead coated porous implants were successfully osseointegrated with peripheral bone. The average bone-implant contact ratios were 84.6 % (External type) and 81.5 % (Internal type). In the modified Goldner's trichrome staining, new generated mature bones were observed at the implant interface at 8 weeks after implantation. Although, further studies are required, we could conclude that the newly developed vacuum sintered Ti-6Al-4V bead coating implant was strong enough to resist the implant insertion force, and it was easily osseointegrated with peripheral bone.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.576-583
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• 2018

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its band gap is larger than that of silicon and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, porous n-type SiC ceramics fabricated from ${\beta}-SiC$ powder have been found to show a high thermoelectric conversion efficiency in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$. For the application of SiC thermoelectric semiconductors, their figure of merit is an essential parameter, and high temperature (above $800^{\circ}C$) electrodes constitute an essential element. Generally, ceramics are not wetted by most conventional braze metals,. but alloying them with reactive additives can change their interfacial chemistries and promote both wetting and bonding. If a liquid is to wet a solid surface, the energy of the liquid-solid interface must be less than that of the solid, in which case there will be a driving force for the liquid to spread over the solid surface and to enter the capillary gaps. Consequently, using Ag with a relatively low melting point, the junction of the porous SiC semiconductor-Ag and/or its alloy-SiC and/or alumina substrate was studied. Ag-20Ti-20Cu filler metal showed promise as the high temperature electrode for SiC semiconductors.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.14 no.2
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• pp.103-115
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• 1981

The cathodic reactions of lead anodic films formed in phosphoric acid, oxalic acid and sodium hydroxide solutions and the reactivities of Di-iso-butylnitrosoamine (DBNA) in sea water at $15\sim30^{\circ}C$ were studied by means of constant current-potential method. Besides, various contants and thermodynamic quantities obtained in the experiment were also do-scribed to explain the reactivities of protons that entered in the anodic film by being transferred across the metal-oxide interface. The electrode reactions of lead anodic film formed in sodium hydroxide solution in 60mM DBNA+0.5M NaCl did not occur because of complete insulator formed on anodic film. The values of $(\partial\triangle E_{H^+}/\partial T)_{i=const}$, estimated with Bead anodic films formed in phosphoric acid in 60mM DBNA+0.5M NaCl and 60mM $DBNA+6\%_{\circ}$ sea water were $-0.006\;V/^{\circ}C\;and\;-0.005\;V/^{\circ}C$, thus being nearly coincided, but the values of $(\partial E_o/\partial T)_{i=o}$ were $0.002\;V/^{\circ}C\;and\;-0.002\;V/^{\circ}C$, being completely inversed.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.45-50
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• 2017

We investigated effect of Zn content on shear strengh of Sn-0.7Cu-xZn and OSP surface finished solder joints. Five pastes of Sn-0.7Cu-xZn (x=0, 0.5, 1.0, 1.5, 2.0 wt.%) solders were fabricated by mixing of solder powder and flux using planatary mixer. $180{\mu}m$ diameter solder balls were formed on OSP surface finished Cu electrodes by screen print method, and the reflow process was performed. The shear strength was evaluated with two high shear speeds; 0.01 and 0.1 m/s. The thickness of the intermetallic compound(IMC) layer was decreased with increasing Zn content in Sn-0.7Cu-xZn solder. The highest shear strength was 3.47 N at the Zn content of 0.5 wt.%. As a whole, the shear strength at condition of 0.1 m/s was higher than that of 0.01 m/s because of impact stress. Fracture energies were calculated by F-x (Force-displacement) curve during high speed shear test and the tendency of fracture energy and that of shear strength were good agreement each other. Fracture took place within solder matrix at lower Zn content, and fracture occured near the interface of OSP surface finished Cu electrode and solder at higher Zn content.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.24-33
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• 2000

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET(Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. In our switching model, relative switched charge is 0.74 nC before fatigue, but after the progress of fatigue it reduces to 0.15 nC with the generation of oxygen vacancies. It indicates that the generation of oxygen vacancies strongly suppresses polarization reversal. $C-V_G\;and\;I_D-V_G$ curves in our MFSFET device model exhibit the memory window of 2 V and show the accumulation, the depletion and the inversion regions in capacitance characteristic clearly. The difference of saturation drain current of the device before fatigue in shown by the dual threshold voltages in $I_D-V_G$ curve as 6nA/$cm^2$ and decreases as much as 50% after fatigue. Decrease of the difference of saturation drain currents by fatigue implies that the accumulation of oxygen vacancies with the fatigue should be avoided in the device application. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.