• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.50-57
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• 2022

Reliability of CMOS has been severed under aggressive device scaling. Conventional technologies such as lightly doped drain (LDD) and forming gas annealing (FGA) have been applied for better device reliability, but further advances are modest. Alternatively, electro-thermal annealing (ETA) which utilizes Joule heat produced by electrodes in a MOSFET, has been newly introduced for gate dielectric curing. However, concerns about mechanical stability during the electro-thermal annealing, have not been discussed, yet. In this context, this paper demonstrates the mechanical stability of nanosheet FET during the electro-thermal annealing. The effect of mechanical stresses during the electro-thermal annealing was investigated with respect to device design parameters.

• 한국전기전자재료학회논문지
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• 제35권3호
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• pp.246-254
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• 2022

Localized heat can be generated using electrically conductive word-lines built into a 3D NAND flash memory string. The heat anneals the gate dielectric layer and improves the endurance and retention characteristics of memory cells. However, even though the electro-thermal annealing can improve the memory operation, studies to investigate material failures resulting from electro-thermal stress have not been reported yet. In this context, this paper investigated how applying electro-thermal annealing of 3D NAND affected mechanical stability. Hot-spots, which are expected to be mechanically damaged during the electro-thermal annealing, can be determined based on understanding material characteristics such as thermal expansion, thermal conductivity, and electrical conductivity. Finally, several guidelines for improving mechanical stability are provided in terms of bias configuration as well as alternative materials.

• 한국전기전자재료학회논문지
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• 제36권1호
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• pp.23-28
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• 2023

This paper demonstrates a novel NAND flash memory structure and annealing configuration including through-silicon via (TSV) inside the silicon substrate to improve annealing efficiency using an electro-thermal annealing (ETA) technique. Compared with the conventional ETA which utilizes WL-to-WL current flow, the proposed annealing method has a higher annealing temperature as well as more uniform heat distribution, because of thermal isolation on the silicon substrate. In addition, it was found that the annealing temperature is related to the electrical and thermal conductivity of the TSV materials. As a result, it is possible to improve the reliability of NAND flash memory. All the results are discussed based on 3-dimensional (3-D) simulations with the aid of the COMSOL simulator.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.418-419
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• 2006

We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium-silicate thin films. The films were fabricated on substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA). The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction (XRD) spectroscopy, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A series of narrow PL spectra from $Eu^{3+}$ ions was observed from the film annealed in $O_2$ ambient. Broad PL spectra associated with $Eu^{2+}$ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, were observed from the thin film annealed at $1000^{\circ}C$ in $N_2$ ambient.

• 한국전기전자재료학회논문지
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• 제27권3호
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• pp.184-188
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• 2014

The electro-optic properties in Langmuir Blodgett films of poly (vinylidene fluoride trifluoroethylene) are investigated in the crossover region between two and three dimensions. The absence of finite size effect is observed in the films thinner than 20 nm, which confirms that these films are two dimensional ferroelectrics. The copolymer LB film of P(VDF-TrFE) exhibits the largest electro-optic response(26 pm/V) at 10 layer thickness. The cross-over behavior of electro-optic effect around the 10 layer thickness was discussed with the formation of nanomesa after thermal annealing.

• 한국재료학회지
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• 제17권9호
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• pp.453-457
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• 2007

Interest in use of ink-jet printing for pattern-on-demand fabrication of metal interconnects without complicated and wasteful etching process has been on rapid increase. However, ink-jet printing is a wet process and needs an additional thermal treatment such as an annealing process. Since a metal ink is a suspension containing metal nanoparticles and organic capping molecules to prevent aggregation of them, the microstructure of an ink-jet printed metal interconnect 'as dried' can be characterized as a stack of loosely packed nanoparticles. Therefore, during being treated thermally, an inkjet-printed interconnect is likely to evolve a characteristic microstructure, different from that of the conventionally vacuum-deposited metal films. Microstructure characteristics can significantly affect the corresponding electrical and mechanical properties. The characteristics of change in microstructure and electrical resistivity of inkjet-printed silver (Ag) films when annealed isothermally at a temperature between 170 and $240^{\circ}C$ were analyzed. The change in electrical resistivity was described using the first-order exponential decay kinetics. The corresponding activation energy of 0.44 eV was explained in terms of a thermally-activated mechanism, i.e., migration of point defects such as vacancy-oxygen pairs, rather than microstructure evolution such as grain growth or change in porosity.

• 공업화학
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• 제27권4호
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• pp.402-406
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• 2016

전도성 고분자인 PEDOT/PSS의 열적 안정성을 검토하기 위하여 바인딩 물질 없이 캐스팅하는 방법에 의해서 필름을 제조하고, $200^{\circ}C$에서 annealing하면서 표면저항의 변화를 검토하였다. PEDOT/PSS 필름은 열처리에 의해서 전기적 특성이 향상되었으며, 2 h 정도에서 최대 전도도값($540S{\cdot}m^{-1}$)을 나타내어 초기 값($180S{\cdot}m^{-1}$)에 비해서 3배 정도 높아졌다. 그러나 시간이 지남에 따라 전기전도도가 떨어지고, 24 h이 지난 이후에는 거의 전기적 특성을 나타내지 않았다. 한편, 산화 그래핀(GO)과 복합화한 PEDOT/PSS 필름에서는 열처리에 의한 전기적 특성의 향상이 더 뚜렷하였으며, $200^{\circ}C$에서 30 h 이상 보관하더라도 전기전도도가 $600S{\cdot}m^{-1}$ 정도를 유지하는 것으로 나타나, GO와의 복합화가 PEDOT/PSS의 열적 안정성을 현저하게 향상시키는 것을 확인할 수 있었다.

• 한국세라믹학회지
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• 제37권8호
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• pp.731-738
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• 2000

KLN(K3Li2Nb5O15) has attracted a great deal of attention for their potential usefulness in piezoelectric, electro-optic, nonlinear optic, and pyroelectirc devices. Especially, the KLN single crystal has been studied in the field of optics and electronics. However it is hard to produce good quality single crystals due to the crack propagation during crystal growing. One of the solutions of this problem is prepartion of thin film. But the intensive study has not been conducted so far. In this study, after the KLN thin film were prepared by R.F. magnetron Sputtering method on SiO2/Si substrate, the post-annealing methods of RTA(rapid thermal annealin) and IPA(insitu post annealing) were employed. The deposition condition of KLN thin film was RF power(100 W), Working pressure(100 mtorr). The commonness of both RAT and IPA was that the higher were deposition and post annealing temperature, the higher was the intensity of XRD but the less surface roughness. The difference of post-annealing methods affected XRD phase and surface condition very much. And in IPA process, the influence of O2 had much effect on the formation of KLN phase.

• 한국자기학회지
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• 제24권6호
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• pp.186-190
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• 2014

뫼스바우어 선원 $^{57}Co/Cu$의 제조조건을 도출하기 위하여, 금속 분말 코발트(Co)를 황산에 용해시킨 후 $H_3BO_3$, KOH와 NaCl을 첨가하여 Sulfamate 도금용액을 제조 후 Cu plate 기판에 도금하였다. 도금두께는 $4{\mu}m$로 일정하게 유지하였다. 전류밀도를 $2mA/cm^2$와 $30mA/cm^2$로 유지하면서 pH에 변화를 준 결과 pH가 4 이상으로 증가하면 hcp 결정의 Co 금속 이외의 2차상이 생성되었다. pH가 증가할수록 Co 후막 표면이 거칠어 졌으며 균열된 표면형상을 관찰하였다. pH가 5까지 증가할 경우 평균입도는 54 nmfh 증가함을 확인하였다. 열처리조건을 변화시키면서 Co가 Cu기지 내에 구속되는 온도가 $900^{\circ}C$에서 2 h임을 확인하였다. 열처리는 진공 후 Ar 분위기(1.5 l/min)를 유지하면서 수행하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1432-1435
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• 2006

We report on carbon nano-fibers (CNFs) for applying to epoxy as a highly thermal conductive adhesive. In order to fabricate CNFs, electro-spinning process was performed with polyacrylonitrile (PAN) solutions. The sample was stabilized at the annealing temperature of $360^{\circ}C$, and carbonized from 900 to $1100^{\circ}C$. It is shown that the synthesized CNFs have a good thermal conductivity of several hundred W/m K. LED backlight units (BLUs) fabricated with MPCB using CNF-mixed epoxy give a better heat dissipation and higher performance than normal LED BLUs. On the basis of SEM, XRD, and FTIR, the characteristics of CNFs are described.