• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.50-57
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• 2022

Reliability of CMOS has been severed under aggressive device scaling. Conventional technologies such as lightly doped drain (LDD) and forming gas annealing (FGA) have been applied for better device reliability, but further advances are modest. Alternatively, electro-thermal annealing (ETA) which utilizes Joule heat produced by electrodes in a MOSFET, has been newly introduced for gate dielectric curing. However, concerns about mechanical stability during the electro-thermal annealing, have not been discussed, yet. In this context, this paper demonstrates the mechanical stability of nanosheet FET during the electro-thermal annealing. The effect of mechanical stresses during the electro-thermal annealing was investigated with respect to device design parameters.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.246-254
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• 2022

Localized heat can be generated using electrically conductive word-lines built into a 3D NAND flash memory string. The heat anneals the gate dielectric layer and improves the endurance and retention characteristics of memory cells. However, even though the electro-thermal annealing can improve the memory operation, studies to investigate material failures resulting from electro-thermal stress have not been reported yet. In this context, this paper investigated how applying electro-thermal annealing of 3D NAND affected mechanical stability. Hot-spots, which are expected to be mechanically damaged during the electro-thermal annealing, can be determined based on understanding material characteristics such as thermal expansion, thermal conductivity, and electrical conductivity. Finally, several guidelines for improving mechanical stability are provided in terms of bias configuration as well as alternative materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.1
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• pp.23-28
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• 2023

This paper demonstrates a novel NAND flash memory structure and annealing configuration including through-silicon via (TSV) inside the silicon substrate to improve annealing efficiency using an electro-thermal annealing (ETA) technique. Compared with the conventional ETA which utilizes WL-to-WL current flow, the proposed annealing method has a higher annealing temperature as well as more uniform heat distribution, because of thermal isolation on the silicon substrate. In addition, it was found that the annealing temperature is related to the electrical and thermal conductivity of the TSV materials. As a result, it is possible to improve the reliability of NAND flash memory. All the results are discussed based on 3-dimensional (3-D) simulations with the aid of the COMSOL simulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.418-419
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• 2006

We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium-silicate thin films. The films were fabricated on substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA). The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction (XRD) spectroscopy, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A series of narrow PL spectra from $Eu^{3+}$ ions was observed from the film annealed in $O_2$ ambient. Broad PL spectra associated with $Eu^{2+}$ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, were observed from the thin film annealed at $1000^{\circ}C$ in $N_2$ ambient.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.184-188
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• 2014

The electro-optic properties in Langmuir Blodgett films of poly (vinylidene fluoride trifluoroethylene) are investigated in the crossover region between two and three dimensions. The absence of finite size effect is observed in the films thinner than 20 nm, which confirms that these films are two dimensional ferroelectrics. The copolymer LB film of P(VDF-TrFE) exhibits the largest electro-optic response(26 pm/V) at 10 layer thickness. The cross-over behavior of electro-optic effect around the 10 layer thickness was discussed with the formation of nanomesa after thermal annealing.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.453-457
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• 2007

Interest in use of ink-jet printing for pattern-on-demand fabrication of metal interconnects without complicated and wasteful etching process has been on rapid increase. However, ink-jet printing is a wet process and needs an additional thermal treatment such as an annealing process. Since a metal ink is a suspension containing metal nanoparticles and organic capping molecules to prevent aggregation of them, the microstructure of an ink-jet printed metal interconnect 'as dried' can be characterized as a stack of loosely packed nanoparticles. Therefore, during being treated thermally, an inkjet-printed interconnect is likely to evolve a characteristic microstructure, different from that of the conventionally vacuum-deposited metal films. Microstructure characteristics can significantly affect the corresponding electrical and mechanical properties. The characteristics of change in microstructure and electrical resistivity of inkjet-printed silver (Ag) films when annealed isothermally at a temperature between 170 and $240^{\circ}C$ were analyzed. The change in electrical resistivity was described using the first-order exponential decay kinetics. The corresponding activation energy of 0.44 eV was explained in terms of a thermally-activated mechanism, i.e., migration of point defects such as vacancy-oxygen pairs, rather than microstructure evolution such as grain growth or change in porosity.

• Applied Chemistry for Engineering
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• v.27 no.4
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• pp.402-406
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• 2016

In order to investigate the thermal stability of electro-conductive poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT/PSS), we have prepared films by casting PEDOT/PSS aqueous solution without using a binding material and measured surface resistances of the films while annealing at $200^{\circ}C$. Electrical properties of films were improved by annealing, and the maximum conductivity ($540S{\cdot}m^{-1}$) after annealing for 2 hrs was found to be approximately 3 times higher than that ($180S{\cdot}m^{-1}$) of the original film. The conductivities, however, dramatically decreased with an increase in annealing time and dissipated after 24 hrs of annealing. On the other hand, PEDOT/PSS films hybridized with graphene oxide (GO) displayed a salient improvement in conductivity by annealing, which was measured to be around $600S{\cdot}m^{-1}$ even after 30 hrs of annealing at $200^{\circ}C$. We tentatively conclude that hybridization with GO enhances the thermal stability of PEDOT/PSS.

• Journal of the Korean Ceramic Society
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• v.37 no.8
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• pp.731-738
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• 2000

KLN(K3Li2Nb5O15) has attracted a great deal of attention for their potential usefulness in piezoelectric, electro-optic, nonlinear optic, and pyroelectirc devices. Especially, the KLN single crystal has been studied in the field of optics and electronics. However it is hard to produce good quality single crystals due to the crack propagation during crystal growing. One of the solutions of this problem is prepartion of thin film. But the intensive study has not been conducted so far. In this study, after the KLN thin film were prepared by R.F. magnetron Sputtering method on SiO2/Si substrate, the post-annealing methods of RTA(rapid thermal annealin) and IPA(insitu post annealing) were employed. The deposition condition of KLN thin film was RF power(100 W), Working pressure(100 mtorr). The commonness of both RAT and IPA was that the higher were deposition and post annealing temperature, the higher was the intensity of XRD but the less surface roughness. The difference of post-annealing methods affected XRD phase and surface condition very much. And in IPA process, the influence of O2 had much effect on the formation of KLN phase.

• Journal of the Korean Magnetics Society
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• v.24 no.6
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• pp.186-190
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• 2014

To establish the coating conditions for $^{57}Co$, non-radioactive Co ions are dissolved in an acid solution and electroplated on to a copper plate. Then, the thermal diffusion of electroplated Co into a copper matrix was studied to apply a $^{57}Co$ $M{\ddot{o}}ssbauer$ source. Nanocrystalline Co particles were coated on a Cu substrate using DC electro-deposition at a pH of 1.89 to 5 and $20{\sim}30mA/cm^2$. The average grain size was up to 54 nm as the pH increased to 5. The second phase of Co-oxide was formatted as the pH was increased above 4. The diffusion degree was evaluated by mapping using scanning electron microscopy (SEM). The influence of different annealing conditions was investigated. The diffusion depth of Co depends on the annealing temperature and time. The results obtained confirm that the deposited Co diffused almost completely into a copper matrix without substantial loss at an annealing temperature of $900^{\circ}C$ for 2 hours.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1432-1435
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• 2006

We report on carbon nano-fibers (CNFs) for applying to epoxy as a highly thermal conductive adhesive. In order to fabricate CNFs, electro-spinning process was performed with polyacrylonitrile (PAN) solutions. The sample was stabilized at the annealing temperature of $360^{\circ}C$, and carbonized from 900 to $1100^{\circ}C$. It is shown that the synthesized CNFs have a good thermal conductivity of several hundred W/m K. LED backlight units (BLUs) fabricated with MPCB using CNF-mixed epoxy give a better heat dissipation and higher performance than normal LED BLUs. On the basis of SEM, XRD, and FTIR, the characteristics of CNFs are described.