• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.11-12
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• 2005

2 차원 MEDICI 시뮬레이터를 이용하여 CMOS 회로의 전기적 특성을 조사하였다. CMOS 인버터 회로는 LDMOSFET를 이용하였는데, LDMOSFET에서 전류 및 스위칭 특성에 많은 영향을 주는 곳은 채널이라고 생각되는데, 채널에서의 불순물 농도 변화에 의한 CMOS 회로의 voltage transfer특성, low input voltage($V_{IL}$), high input voltage($V_{IH}$)등을 조사하였다. LDMOSFET에서 N 채널의 농도는 $V_{IL}$에, P 채널의 농도는 $V_{IH}$에 많은 영향을 주었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.635-640
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• 2016

This paper dealt with the deterioration characteristics and an on-line diagnosis equipment for SPDs (surge protective devices). An accelerated aging test was carried out using a $8/20{\mu}s$ standard lightning impulse current to analyze the changes of electrical characteristics and to propose the diagnostic parameters and the criterion for deterioration of ZnO varistor which is the core component of SPDs. Based on the experimental results, an on-line diagnosis equipment for SPD was fabricated, which can measure the total leakage current, reference and clamping voltage. The leakage current measurement circuit was designed using a low-noise amplifier and a clamp type ZCT. A linear controller, the leakage current measurement part and a HVDC were used in the measurement of reference voltage. The measurement circuit of clamping voltage consisted of a surge generator and a coupling circuit. In a calibration process, measurement error of the prototype equipment was less than 3%.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.1 no.1
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• pp.65-72
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• 2002

본 논문에서는 인터넷 가전제어를 위한 전력선 통신망 채널 특성 추정 기법을 제시하였고 실 거주 댁내 전력선 통신망의 채널 특성을 실측하여 통신 신뢰도를 평가하였다. 전력선 통신 기능을 내장한 동일 모델의 네트워크 가전제품 4종(에어컨, 냉장고, 세탁기, 전자렌지)을 실 거주 가정 100가구에 설치하여 전력선 통신망의 통신 신뢰도를 평가하였다. 통신 신뢰도의 평가 결과 통신 신뢰도가 90%이상이 나타나는 것을 확인하였다. 이것은 PLC모뎀이 장착된 가전제품의 활용과 고밀도 아파트 주거 지역에서 인터넷 가전제어를 위한 서비스가 상업적으로 이용할 수 있는 근거를 뒷받침한다고 할 수 있다.

• Journal of electromagnetic engineering and science
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• v.2 no.2
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• pp.75-80
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• 2002

Signal integrity problems and their possible solutions are addressed in this paper for split power plane of high-speed digital systems. Stitching and decoupling capacitors are proved to be very effective for reducing signal noise, ground bounce as well as electromagnetic radiation from the split power plane. Simulations based on 3D-Finite Difference Time Domain (FDTD) method are utilized for the analysis of practical high frequency multi-layered PC main board.

• Journal of Power Electronics
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• v.11 no.6
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• pp.819-823
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• 2011

This paper presents a fuzzy PD speed control scheme for the robust speed tracking of a permanent magnet synchronous motor (PMSM). Motivated by the common control engineering knowledge that transient performance can be improved if the P gain is big and the D gain is small in the beginning, a linearizing control scheme with a fuzzy PD controller is proposed. The global system stability is analyzed and the proposed control algorithm is implemented using a TMS320F28335 DSP. Simulation and experimental results are given to verify the effectiveness of the proposed method.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.370-372
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• 1995

This paper mainly, describes the electrical characteristics caused by the change of structure in solid state of specimen by electron beam irradiation of high temperature-low expension type molding materials of power semiconductor element. The experiments on physical properties and electrical characteristics for the specimen irradiated electron beam are carried ont. For the investigation on physical properties, XRD analysis is used. And for the experiment of electrical characteristics, measurement of volumn resistivity is used.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.335-340
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• 2013

In this study, the plasma etching of the TaN thin film with $CH_4/BCl_3/Ar$ gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to $SiO_2$ was studied as a function of the process parameters, including the amount of $CH_4$. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.

• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.1
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• pp.1-7
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• 2012

This paper describes the performance comparison results for current controller of a single-phase PFC converter with 1-switch voltage doubler strategy for single-phase double-conversion UPS(Uninterruptible Power Supply). A single-phase PFC converter with 1-switch voltage doubler strategy needs a diode bridge and one bidirectional active switch. Thus it is possible to reduce the material cost. However, the study results of current controller design and comparison of current control method has not been known after the converter circuit was proposed. For the performance comparison of current control, single-phase 3 kVA double-conversion UPS was tested. The performance of PI and PR current controller is experimentally confirmed with followings - input current reference tracking, input power factor correction and input current THD suppression.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.26-27
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• 2008

본 연구는 투명전도성전극(TCO)인 ITO를 대체하기 위해 ZnO에 $Al_2O_3$, $SiO_2$, $TiO_2$의 불순물을 도핑하여 박막의 전기적 및 광학적 특성에 관한 연구를 하였다. 불순물 도핑은 2wt.%로 진행 하였고, 동일한 전압과 두께로 그 특성을 비교 하였으며, 특성으로는 UV-Vis를 이용한 광투과율 측정과 광투과율을 이용한 박막의 광학적 밴드갭과 굴절률을 계산 하였다. 전기적 특성으로는 4-Point Probe로 면저항과 비저항값을 측정하였다.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.183-186
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• 2015

This research investigates the impact of charge spreading on the data retention of three-dimensional (3D) silicon-oxide-nitride-oxide-silicon (SONOS) flash memory where the charge trapping layer is shared along the cell string. In order to do so, this study conducts an electrical analysis of the planar SONOS test pattern where the silicon nitride charge storage layer is not isolated but extends beyond the gate electrode. Experimental results from the test pattern show larger retention loss in the devices with extended storage layers compared to isolated devices. This retention degradation is thought to be the result of an additional charge spreading through the extended silicon nitride layer along the width of the memory cell, which should be improved for the successful 3-D application of SONOS flash devices.