Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Surface of the Dry Etched TaN Thin Film by Adding The CH4 Gas in BCl3/Ar Inductively Coupled Plasma

BCl3/Ar 유도결합 플라즈마 안에 CH4 가스 첨가에 따른 건식 식각된 TaN 박막 표면의 연구

  • Woo, Jong-Chang (Nano Convergence Sensor Research Section, Electronics and Telecommunications Research Institute) ;
  • Choi, Chang-Auck (Nano Convergence Sensor Research Section, Electronics and Telecommunications Research Institute) ;
  • Yang, Woo-Seok (Nano Convergence Sensor Research Section, Electronics and Telecommunications Research Institute) ;
  • Joo, Young-Hee (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kang, Pil-Seung (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Chun, Yoon-Soo (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • 우종창 (한국전자통신연구원 나노융합센서연구실) ;
  • 최창억 (한국전자통신연구원 나노융합센서연구실) ;
  • 양우석 (한국전자통신연구원 나노융합센서연구실) ;
  • 주영희 (중앙대학교 전자전기공학부) ;
  • 강필승 (중앙대학교 전자전기공학부) ;
  • 전윤수 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Received : 2013.03.05
  • Accepted : 2013.04.08
  • Published : 2013.05.01
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Abstract

In this study, the plasma etching of the TaN thin film with $CH_4/BCl_3/Ar$ gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to $SiO_2$ was studied as a function of the process parameters, including the amount of $CH_4$. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.

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References

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