• Title/Summary/Keyword: Electrical capacitance

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Charge-Discharge Properties of Polyaniline-Carbon Composite Electrodes for Supercapacitor (Supercapacitor용 Polyaniline-Carbon Composite전극의 충방전 특성)

  • Kang, Kwang-Woo;Kim, Jong-Uk;Gu, Hal-Bon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.124-127
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    • 2000
  • The purpose of this study is to research and develop PAn-Carbon composite electrode for Supercapacitor. Supercapacitor cell of PAn-Carbon composite electrode with 1M $LiClO_{4}/IPC$ brings out good capacitor performance below 4.0V. The radius of semicircle of PAn-Carbon composite electrode adding 30wt% Acetylene Black was absolutely small. The total resistance of Supercapacitor cell mainly depended on internal resistance of he electrode. The discharge capacitance of PAn-Carbon on composite with 30wt% Acetylene Black in 1st and 50th cycles was 29 and 31F/g at current density of $1mA/cm^2$. The capacitance of PAn-Carbon composite with 30wt% Acetylene Black capacitor was larger than that of PAn capacitor without Acetylene Black. The coulombic efficiency of supercapacitor at discharge process of 1 and 50 cycles were 94 and 100%. respectively. PAn-Carbon composite Supercapacitor with 30wt.% Acetylene Black content showed good capacitance and stability with cycling.

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Capacitance-Voltage Characteristics in the Double Layers of SiO$_2$/Si$_3$N$_4$ (SiO$_2$/Si$_3$N$_4$ 이중 박막의 C-V 특성)

  • Hong, Nung-Pyo;Hong, Jin-Woong
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.10
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    • pp.464-468
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    • 2003
  • The double layers of $SiO_2$/$Si_3$$N_4$ have superior charge storage stability than a single layer of $SiO_2$. Many researchers are very interested in the charge storage mechanism of $SiO_2$/$Si_3$$N_4$ [1,2]. In this paper, the electrical characteristics of thermal oxide and atmospheric pressure chemical vapor deposition (APCVD) of $Si_4$$N_4$ have been investigated and explained using high frequency capacitance-voltage measurements. Additionally, this paper will describe capacitance-voltage characteristics for double layers of $SiO_2$/$Si_4$$N_4$ by "Athena", a semiconductor device simulation tool created by Silvaco, Inc.vaco, Inc.

Theoretical Computation of the Capacitance of an Asymmetric Coplanar Waveguide

  • Song, Chan Mi;Kwon, Gina;Lee, Jong Min;Lee, Kang-Yoon;Yang, Youngoo;Hwang, Keum Cheol
    • Journal of Electrical Engineering and Technology
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    • v.13 no.1
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    • pp.393-399
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    • 2018
  • An electrostatic boundary-value problem of a dielectric-wedge-backed, double-slotted conducting wedge is investigated to analyze an asymmetric coplanar waveguide with an infinite dielectric thickness using the Mellin transform and a mode-matching method. Our theoretical solution based on eigenfunction expansion and residue calculus is a rigorous and fast-convergent series form. Numerical computations are conducted to evaluate the potential field, capacitance, and characteristic impedance for various structures of the asymmetric coplanar waveguide. The computed results show good agreement with the simulated results.

A unified analysis method for capacitance and inductance of power transmission lines (송전선의 정전용량과 인덕턴스의 통일적 해석법)

  • 황석영
    • 전기의세계
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    • v.29 no.3
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    • pp.185-192
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    • 1980
  • It is revealed that duality and similarity between both capacitance and inductance systems coexist, and also that the former is more efficient than the latter in application viewpoints in time-invariant linear cases as far as both systems are concerned. This paper, using the similarity relation, proposes a new magnetics capacity concept similar to electrostatic capacity so that inductance systems may be interpreted as the corresponding capacitance systems. The new concept makes it convenient to analyze the both systems by unified approach. Finally an example demonstrates the applicability and convenience of the proposed method, through the analysis of capacitances and inductances on the transposed transmission line.

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An Analysis of Capacitance in Multi-electrode System by Surface-Contacted Elements (표면접촉요소에 의한 다중 전극계의 정전용량 해석)

  • Park, Pil-Yong;Choi, Seung-Kil;Shim, Jae-Hak;Kang, Hyung-Boo
    • Proceedings of the KIEE Conference
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    • 1999.07e
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    • pp.2287-2289
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    • 1999
  • In this paper, a new method for calculating capacitance in multi-electrode system with arbitrarily shape is presented. This new approach based on divergence theorem and Gauss's law is achieved by Surface-Contacted Element(SCE) for Gaussian surface. To evaluate capacitance in multi-electrode system, two dimensional finite element method using only the elements which is contacted one nod (PE: Point-Element) or two nod (FE: Face-Element) with surface is employed. The proposed SCE method has short computing time to calculate capacitance which is because it uses only SCE elements and needs one calculation loop while exiting FEM method in servral loops. This method is verified by application in calculating capacitance using potential detection device model which is composed with anode, cathode, and floating electrode.

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Precise Measurement of Dielectric Constant Using Cross Capacitance Measurement Method (Cross Capacitance 측정법을 이용한 유전상수 정밀측정)

  • Kim, Han-Jun;Kang, Jeon-Hong;Yu, Kwang-Min;Lee, Sei-Hyun;Koo, Kyung-Wan;Han, Sang-Ok
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1287-1288
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    • 2007
  • The cross capacitor electrode system applied Thompson-Lampard theorem for precise and accurate measurement of dielectric constants is studied in this study. The capacitance derived from cross capacitor is calculated by the equation of ($C=\frac{{\epsilon}ln2}{\pi}{\cdot}$ effectivelength of electrode) which is very different from the equation of capacitance derived from parallel plate capacitor. From above mentioned reason, the capacitance measurement uncertainty of cross capacitor can be reduced then that of the parallel plate capacitor. the measurement dielectric constant measured by cross capacitor electrode method is one order more accurate and precise than that of 3-electrode method.

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A Study on Capacitance Selection Method of DC-link Capacitor Using Current Ripple (전류 리플을 이용한 직류단 캐패시터의 용량 선정 기법에 관한 연구)

  • Kim, Yong-Hyu;Lee, Byung-Hoon;Hwang, Seon-Hwan
    • Journal of the Korean Society of Industry Convergence
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    • v.25 no.1
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    • pp.47-53
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    • 2022
  • This paper proposes a method for selecting the capacitance of DC-link capacitors of inverters. In general, the DC-link capacitance of the inverter system must be considered for DC-link voltage, ripple current, switching frequency, ripple voltage, and pulse-width modulation techniques. Therefore, the appropriate capacitance can be determined by finding the rms and peak values of the ripple current of the capacitor. In this paper, the process of extracting the ripple current of DC-link capacitor is described in detail. In addition, the simple method for finding DC-link capacitor capacitance using the result value is presented through the simulations.

Minimization of DC-Link Capacitance for NPC Three-level PWM Converters

  • Alemi, Payam;Lee, Dong-Choon
    • Proceedings of the KIPE Conference
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    • 2011.07a
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    • pp.370-371
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    • 2011
  • This paper presents a control algorithm that minimizes the DC-link capacitance by decreasing the capacitor current. The capacitor current can be nullified by a feedback compensation term which is calculated from the power balance in the AC/DC converter. As a result, voltage variation in the DC-link is reduced further, which makes a large reduction in the size of DC-link capacitors which are expensive and have limitations in life time. Simulations are performed with two 80uF DC-link capacitors, which can be replaced by film capacitors.

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Analysis of Small Signal Stability for SSR on Generator Loading Condition (계통 운전조건에 따른 축 비틀림 전동 미소신호안정도 해석)

  • Kim, D.J.;Moon, Y.H.
    • Proceedings of the KIEE Conference
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    • 2002.11b
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    • pp.85-87
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    • 2002
  • The paper describes the formulation of state matrix equations from the linearized multi-machine power system including network dynamics and the application of IEEE First Benchmark Model. The eigenvalues of IEEE First Benchmark Model are investigated not only by changing the compensation of series capacitance at no-load conditions, but also by varying the generator loading at fixed compensation of capacitance. In addition, the pure electrical self-excited mode is also examined by an eigen analysis and time domain simulation.

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Electrical characteristics of the this film interface of amorphous chalcogenide semiconductor (비정질 칼코게나이드 반도체 박막 경계면의 전기적 특성)

  • 박창엽
    • 전기의세계
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    • v.29 no.2
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    • pp.111-117
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    • 1980
  • Contacts formed by vacuum evaporation of As-Te-Si-Ge chalcogenide glass onto Al metal (99.9999%) are studied by measuring paralle capacitance C(V), Cp(w), resistance R(V), Rp(w), and I-V characteristics. The fact that contact metal alloying produced high-resistance region is confirmed from the measurements of parallel capacitance and resistance. From the I-V characteristics in the pre-switcing region, it is found that electronic conduction and sitching occurs in the vicinity of metal-amorphous semiconductor interface. From the experimental obsevations, it is concuded that the current flow in the thin film is space-charge limited current (SCLC) due to the tunneling of electrons through the energy barriers.

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