• Design & Manufacturing
• /
• v.11 no.2
• /
• pp.51-56
• /
• 2017

Nitinol, a shape memory alloy (SMA), is manufactured from titanium and nickel and it used in various fields such as electrical applications, micro sensors. It is also recommended as a material in medical for implant because it has excellent organic compatibility. Nitinol is intended to be inserted into the human body, products require a high-quality surface and low residual stress. To overcome this problems, explore electrolyte polishing (EP) is being explored that may be appropriate for use with nitinol. EP is a particularly useful machining method because, as a non contact machining method, it produces neither machining heat nor internal stress in the machined materials. Sandpaper polishing is also useful machining method because, as a contact machining method, it can easily good surface roughness in the machined materials. The electrolyte polishing (EP) process has an effect of improving the surface roughness as well as the film polishing process, but has a characteristic that the residual stress is hardly generated because the work hardened layer is not formed on the processed surface. The sandpaper polishing process has the effect of improving the surface roughness but the residual stress remains in the surface. We experimented with three conditions of polishing process. First condition is the conventional polishing. Second condition is the electrochemical polishing(EP). And Last condition is a mixing process with the conventional polishing and the EP. Surface roughness and residual stress of the nitinol before a polishing process were $0.474{\mu}mRa$, -45.38MPa. Surface roughness and residual stress of the nitinol after mixing process of the conventional polishing and the EP were $1.071{\mu}mRa$, -143.157MPa. Surface roughness and residual stress of the nitinol after conventional polishing were $0.385{\mu}mRa$ and -205.15MPa. Surface roughness and residual stress of sandpaper and EP nitinol were $1.071{\mu}mRa$, -143.157MPa. The result shows that the EP process is a residual stress free process that eliminates the residual stress on the surface while eliminating the deformed layer remaining on the surface through composite surface machining rather than single surface machining. The EP process can be used for biomaterials such as nitinol and be applied to polishing of wafers and various fields.

• Korean Journal of Materials Research
• /
• v.8 no.4
• /
• pp.288-292
• /
• 1998

The p*-n ultra shallow junction diode with Co/Ti bilayer silicide was formed by ion implantation of $BF_{2}$ energy : 30KeV, dose : $5\times10^{15}cm^{-2}$] onto the n-well Si(100) region and RTA-silicidation of the evaporated Co($120\AA$)/Ti($40\AA$) double layer. The fabricated diode exhibited ideality factor of 1.06, specific contact resistance of $1.2\times10^{-6}\Omega\cdot\textrm{cm}^2$ and leakage current of $8.6\muA/\textrm{cm}^2$(-3V) under the reverse bias of 3V. The sheet resistance of silicided emitter region, the boron concentration at silicide/Si interface and the junction depth including silicide layer of ($500\AA$ were about $8\Omega\Box$, $6\times10^{19}cm^{-3}$, and $0.14\mu{m}$, respectively. In the fabrication of diode, the application of Co/Ti bilayer silicide brought improvement of ideality factor on the current-voltage characteristics as well as reduction of emitter sheet resistance and specific contact resistance, while it led to a little increase of leakage current.

• Journal of the Microelectronics and Packaging Society
• /
• v.17 no.2
• /
• pp.63-67
• /
• 2010

The organic solar cells with Glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structure were fabricated using regioregular poly (3-hexylthiophene) (P3HT) polymer:(6,6)- phenyl $C_{61}$-butyric acid methyl ester (PCBM) fullerene polymer as the bulk hetero-junction layer. The P3HT and PCBM as the electron donor and acceptor materials were spin casted on the indium tin oxide (ITO) coated glass substrates. The optimum mixing concentration ratio of photovoltaic layer was found to be P3HT:PCBM = 4:4 in wt%, indicating that the short circuit current density ($J_{SC}$), open circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency (PCE) values were about 4.7 $mA/cm^2$, 0.48 V, 43.1% and 0.97%, respectively. To investigate the effects of the post annealing treatment, as prepared organic solar cells were post annealed at the treatment time range from 5min to 20min at $150^{\circ}C$. $J_{SC}$ and $V_{OC}$ increased with increasing the post annealing time from 5min to 15min, which may be originated from the improvement of the light absorption coefficient of P3HT and improved ohmic contact between photo voltaic layer and Al electrode. The maximum $J_{SC},\;V_{OC}$, FF and PCE values of organic solar cell, which was post annealed for 15min at $150^{\circ}C$, were found to be about 7.8 $mA/cm^2$, 0.55 V, 47% and 2.0%, respectively.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.20 no.7
• /
• pp.46-52
• /
• 2006

The effects of surface treatment on the hydrogen storage properties of a $Mg_2Ni$ alloy particle were investigated by the microvoltammetric technique, in which a carbon-filament microelectrode was manipulated to make electrical contact with the particle in a KOH aqueous solution. It was found that the hydrogen storage properties of $Mg_2Ni$ at room temperature were improved by the surface treatment with a nickel plating solution. The sodium salts(sodium phosphate and sodium dihydrogen citrate) contained in the nickel plating solution made the alloy form an amorphous-like state, resulting in an improved hydrogen charge/discharge capacity at room temperature as high as about 150[mAh/g] from the original value of 17[mAh/g]. Potential-step experiment was carried out to determine the apparent chemical diffusion coefficient of hydrogen atom($D_{app}$) in the alloy. Since the alloy particle we used here was a dense, conductive sphere, the spherical diffusion model was employed for data analysis. $D_{app}$ was found to vary the order between $10^{-8}{\sim}10^{-9}[cm^2/s]$ over the course of hydrogenation and dehydrogenation process.

• Journal of the Korean institute of surface engineering
• /
• v.39 no.3
• /
• pp.93-97
• /
• 2006

Polymer light emitting diodes (PLEDs) are expected to be commercialized as next generation displays by advantages of the fast response time, low driving voltage and easy manufacturing process for large sized flexible display. Generally, the electrical and optical properties of PLEDs are affected by the surface conditions of transparent electrode. The PLED devices with ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by using the spin coating method. For this, PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)) Al 4083 and PVK(N-vinylcabozole) were used as hole injection and transport layers. The PFO-poss(poly(9,9-dioctylfluorene)) was used as the emitting layer. The dependence of $O_2$ plasma treatment of ITO electrode on the electrical and optical properties of PLEDs were investigated. The sheet resistances increased slightly with an improved surface roughness of ITO electrode as the RF power increased during $O_2$ plasma treatment. The PLED devices prepared on the ITO/Glass substrates, which were plasma-treated at 40 watt in RF power for 30 seconds under 40 mtorr $O_2$ pressure, showed the maximum external emission efficiency of 0.86 lm/W and the maximum luminance of $250\;cd/m^2$, respectively. The CIE color coordinates are ranged $X\;=\;0.13{\sim}0.18$ and $Y\;=\;0.10{\sim}0.16$, showing blue color. emission.

• Journal of Adhesion and Interface
• /
• v.17 no.1
• /
• pp.15-20
• /
• 2016

Fiber arrangement was important for fiber reinforced thermoplastic composites using injection fabrication. In this work, fiber arrangement in CF/PP was investigated to use electrical resistance (ER) method during injection times. There were 3 types of injection products of CF/PP with different ER change ratio by fiber arrangement. High ER change ratio case of injection CF/PP products had better increased tensile strength. This reason was due to the fiber arrangement of CF/PP by injection. Fractured surface and contact angle of CF/PP products were used to evaluate for injection product quality. Uniform fiber arrangement of CF/PP by injection type exhibited the uniform heat condition of melted CF/PP. Steady thermal transfer effect occurred from melted CF/PP to steel injection mold. Steady thermal transfer effect of CF/PP was transmitted to high ER change ratio of mold. Ultimately, good condition CF/PP product by injection molding method could be predicted by using ER method.

• Korean Journal of Materials Research
• /
• v.19 no.1
• /
• pp.28-32
• /
• 2009

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.

• Journal of Advanced Navigation Technology
• /
• v.24 no.6
• /
• pp.566-572
• /
• 2020

In a wireless power transmitter, the characteristics and effects of wireless power transmission between two induction coils are investigated, and a power converter circuit and a battery charger/discharger circuit using wireless power transmission technology are proposed. The advantage of wireless power transmitters and wireless chargers is that, instead of the existing plug-in-mounted wired charger (OBC; on-board charger), the user can wirelessly charge the battery without connecting the power source when charging power to the battery. There is. In addition, the advantage of wireless charging can bring about an energy efficiency improvement effect by using the secondary side rectifier circuit and the receiving coil, but the large-capacity long-distance wireless charging method has a limitation on the transmission distance, so many studies are currently being conducted. The purpose of the study is to study the transmitter circuit and receiver circuit of a wireless power transmission device using a primary coil, a secondary coil, and a half bridge series resonance converter, which can transmit power of a non-contact type power transmitter. As a result, a new topology was applied to improve the power transmission distance of the wireless charging system, and through an experiment according to each distance, the maximum efficiency (95.8%) was confirmed at an output of 3 kW at an 8 cm transmission distance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.4
• /
• pp.413-417
• /
• 2023

Gallium Oxide (Ga₂O₃) is preferred as a material for next generation power semiconductors. The Ga₂O₃ should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga₂O₃ is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu₂O. Research the lateral-type FET structure of NiO/Ga₂O₃ heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×10¹⁷ to 1×10¹⁹ cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I_D = 1×10^-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga₂O₃ region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I_D =1×10^-3 A/mm.

• Korean Journal of Materials Research
• /
• v.18 no.12
• /
• pp.664-668
• /
• 2008

Vapor phase polymerization of a conductive polymer on a $SiO_2$ surface can offer an easy and convenient means to depositing pure and conductive polymer thin films. However, the vapor phase deposition is generally associated with very poor adhesion as well as difficulty when patterning the polymer thin film onto an oxide dielectric substrate. For a significant improvement of the patternability and adhesion of Poly(3-hexylthiophene) (P3HT) thin film to a $SiO_2$ surface, the substrate was pre-patterned with n-octadecyltrichlorosilane (OTS) molecules using a ${\mu}$-contact printing method. The negative patterns were then backfilled with each of three amino-functionalized silane self-assembled monolayers (SAMs) of (3-aminopropyl) trimethoxysilane (APS), N-(2-aminoethyl)-aminopropyltrimethoxysilane (EDA), and (3- trimethoxysilylpropyl)diethylenetriamine (DET). The quality and electrical properties of the patterned P3HT thin films were investigated with optical and atomic force microscopy and a four-point probe. The results exhibited excellent selective deposition and significantly improved adhesion of P3HT films to a $SiO_2$ surface. In addition, the conductivity of polymeric thin films was relatively high (${\sim}13.51\;S/cm$).