• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.311-314
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• 2001

This paper describes the simulation study, conducted on the propagation characteristics of AE signal in the connection of GIS. In the high voltage and large power system, the equipment with SF$\sub$6/ gas insulation which consists of the component part enclosed in the compressed gas has less affected by the environment than with air insulation. When the breakdown in the electric installation occurs, it takes much time to repair them though. Therefore it is very important to diagnose the propagation characteristics of AE signal in the GIS. So, in this investigation, we make a plane model of 362 kV GIS and modal and harmonic analysis to observe the vibro-acoustic property. Through the result of the analysis, we can make a further understanding on the vibro-acoustic characteristics of AE singnal in the connection of GIS.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.5
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• pp.709-715
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• 1990

SiO2 films were nitrided by tungsten-halogen heated rapid thermal annealing in ammonia gas at temperatures of 900-1100\ulcorner for 15-180sec. The nitroxide films were analyzed using Auger electron spectroscopy. MIS caapcitors were fabricated using these films as gate insulators. I-V and C-V characteristics of MIS capacitors were investigated. The AES depth profiles of nitroxide film show that the nitrogen rich layer is, at the early stage of nitridation, formed at the surface of nitroxide film and near the interface between nitroxide and silicon. Nitridation of SiO2 makes the film have a larger effective average refractive index. The thermal nitridation of SiO2 on silicon causes the flatband voltage shift due to the change of the fixed charge density. It is found that the dominant conduction mechanism in nitroxide is Fowler-Nordheim tunneling. Rapid thermal nitridation of 200\ulcornerSiO2 on silicon results in an improvement in the dielectric breakdown electric field.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.5
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• pp.729-736
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• 1990

Oxide (RTO), nitrided-oxide(NO), and reoxidized-nitrided-oxide(ONO) films were formed by sequential rapid thermal processing. The film composition was investigated by Auger electron spectroscopy(AES). The Si/SiO2 interface and SiO2 surface are nitrided more preferentially than SiO2 bulk. When the NO is reoxidized, [N](atomic concentration of N) in the NO film decreased` especially, the decrease of [N] at the surface is considerable. The weaker the nitridation condition is, the larger the increase of thickness is as the reoxidation proceeds. The elelctrical characteristics of RTO, NO, and ONO films were evaluated by 1-V, high frequency (1 MHz) C-V, and high frequency C-V after constant current stress. The ONO film-which has 8 nm thick initial oxide, nitrided in NH3 at 950\ulcorner for 60 s, reoxidized in O2 at 1100\ulcorner for 60 s-shows good electrical characteristics such as higher electrical breakdown voltage and less variation of flat band voltage under high electric field than RTO, and NO films.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.145-148
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• 1998

Fluoride({{{{ { CaF}_{2 } }}}}) films exhibited a cubic structure with similar lattice constant to that of Si and have sufficient breakdown electric field as gate dielectric material. Therefore, {{{{ { CaF}_{2 } }}}} are expected to replace conventional insulator such {{{{ { SiO}_{ 2},{Ta}_{2}{O}_{ 2} and{Al}_{2}{O}_{5}. However, {CaF}_{2}}}}} films showed hystereisis properties due to mobile charges in the film. To solve this problem we performed thermal treatment and achieves field. C-v results indicate a reduced hystereisis window of {{{{ }}}}ΔV =0.2v, LOW INTERFACE STATE {{{{{D}_{it}=2.0 TIMES {10}^{11}{cm}^{-1}{eV}^{-1}}}}} in midgap, and good WIS diode properties. We observed a preferential crystallization of(200) plane from XRD analysis. RTA treatment effects on various material properties of {{{{{CaF}_{2}}}}} are presented in this paper.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.386-389
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• 1999

Effect of high voltage screening was examined on mechanical strength of titania ceramics with two different surface roughness. Roughly finished sample showed degraded mechanical strength meaning that the introduced flaw played the role of starting point of mechanical fracture. On such sample, electrically weak parts were eliminated by applying a screening field. Mechanical strength measurement on survived parts revealed that after screening the Weibull plots bended to become a convex curve while plots at high strength region were almost the same. This result means that relatively low mechanical strength parts were eliminated by the electrical method. As a result the Weibull modulus calculated from all the data increased, demonstrating the effect of high voltage screening on titania ceramics containing fracture controlling surface flaws. Roles of the surface flaw such as a common weak spot for both failures are disscussed in relation to the electric field concentration similar to that of mechanical stress.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.391-392
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• 2008

A SPICE-based 3-dimensional circuit model of Light-Emitting Diode(LED) was modified include the reverse breakdown properties. The new model is found to be accurate to study the failure mechanisms of LEDs under electrostatic discharge (ESD) and electronic overstress (EOS). It was found that the permanent damages under heavy reverse stress is mainly due to the high electric field strength in P-GaN layer.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1042-1045
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• 2002

The scaling of device dimension and supply voltage with high performance and reliability has been the main subject in the evolution of VLSI technology, The MOSFET structures become susceptible to high field related reliability problems such as hot-electron induced device degradation and dielectric breakdown. HLDBD(HLD Buffered Deposition) is used to decrease junction electric field in this paper. Also we compared the hot carrier characteristics of HLDBD and conventional.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.111-114
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• 2003

Compared to a conventional atomic layer deposition (ALD) grown Al203 film, Plasma enhanced ALD (PEALD) grown AION film was revealed to possess a large breakdown field, which is necessary for stable operation of thin film electroluminescent (TFEL) device. Also, AION is more stable than Al203 films grown by PEALD or by ALD after post-annealing process, which is inevitably required to improve luminance property of phosphor. Furthermore, AION films were applied to insulators of ZnS:Tb TFEL device. Resultant1y, they show better stability than ALD grown insulators under high electric field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.415-420
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• 2007

Generally, a diode package consists of the synthetic resin that has good durability but low thermal conductivity. The surface mounted type fast recovery diode was fabricated by using ceramic package. Its main manufacture processes are composed of soldering, sillicon coating and side termination. And it has various advantages that diode is small, easy manufacture and fast cooling. The electric characteristics of the diode such as reverse recovery time, breakdown voltage, forward voltage, and leakage current were 5.28 ns, 1322 V, 1.08 V, $0.45\;{\mu}A$, respectively.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1642-1644
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• 1996

Passivation must prevent ionic charge movement on the surface of the junction, thereby minimizing the junction leakage and maximizing the breakdown voltage of the devices. Borosilicate glasses are widely used as surface passivants for such silicon power devices as thyristors, transistor, and diodes. Since these 91asses are electrically stable at high temperatures and in high electric fields, they can readily be applied as a thick film, and they are resistant to humidity and have low ionic mobility. A deposition technique of glass film on the silicon surface by electrophoresis in which acetone is used as a suspension medium has been investigated. The purpose of this paper is to describe electrophoretic deposition method for glass passivation and characteristics of glass films which were compared using DTA, SEM, XRD, as a function of firing temperature.