Proceedings of the Korea Association of Crystal Growth Conference (한국결정성장학회:학술대회논문집)

The Korea Association of Crystal Growth (한국결정성장학회)
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Thermal treatment effect of $CaF_2$ films for TFT gate insulator applications

  • Kim, Do-Young (School of Electrical and Computer Engineering Sungkyunkwan University) ;
  • Park, Suk-Won (School of Electrical and Computer Engineering Sungkyunkwan University) ;
  • Junsin Yi (School of Electrical and Computer Engineering Sungkyunkwan University)
  • Published : 1998.06.01
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Abstract

Fluoride({{{{ { CaF}_{2 } }}}}) films exhibited a cubic structure with similar lattice constant to that of Si and have sufficient breakdown electric field as gate dielectric material. Therefore, {{{{ { CaF}_{2 } }}}} are expected to replace conventional insulator such {{{{ { SiO}_{ 2},{Ta}_{2}{O}_{ 2} and{Al}_{2}{O}_{5}. However, {CaF}_{2}}}}} films showed hystereisis properties due to mobile charges in the film. To solve this problem we performed thermal treatment and achieves field. C-v results indicate a reduced hystereisis window of {{{{ }}}}ΔV =0.2v, LOW INTERFACE STATE {{{{{D}_{it}=2.0 TIMES {10}^{11}{cm}^{-1}{eV}^{-1}}}}} in midgap, and good WIS diode properties. We observed a preferential crystallization of(200) plane from XRD analysis. RTA treatment effects on various material properties of {{{{{CaF}_{2}}}}} are presented in this paper.

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