• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.497-501
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• 2004

The crystal structure of the GaN film on the AIN buffer layer grown by R. F sputtering with different thickness has been studied using X-ray scattering and transmission electron microscopy(TEM). The interface roughness between the AIN buffer layer and the epitaxial GaN film, due to crossover from planar to island grains, produced edge dislocations. The strain, coming from lattice mismatch between the AIN buffer layer and the epitaxial GaN film, produced screw dislocations. The density of the edge and screw dislocation propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.192-195
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• 2019

Single-crystal diamond obtained by chemical vapor deposition (CVD) exhibits great potential for use in next-generation power devices. Low defect density is required for the use of such power devices in high-power operations; however, plastic deformation and lattice strain increase the dislocation density during diamond growth by CVD. Therefore, characterization of the dislocations in CVD diamond is essential to ensure the growth of high-quality diamond. In this work, we analyze the characteristics of the dislocations in CVD diamond through synchrotron white beam X-ray topography. In estimate, many threading edge dislocations and five mixed dislocations were identified over the whole surface.

• Transactions of the Korean Society of Mechanical Engineers
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• v.9 no.1
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• pp.10-17
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• 1985

A new method is suggested for the solution of plane elasticity problems. With use of the dislocation model in the crack problems, the basic scheme of this method is to find equilibrium Burgers vectors of dislocations which are distributed along the boundary of the first fundamental boundary value problems. The stress distribution in the region can be found by superposition of the contributions of each dislocation. The method is applied to three cases with known analytical solutions, and to a V-notched specimen under uniaxial tension. The numerical results are compared with other available solutions. This method is effective and simple in its use, compared with other numerical methods. The method also provides very accurate solutions in the region except near the boundary where the discretization error is significant. The extrapolation method is suggested for the stresses in the boundary region. Extensive application are also suggested for a general estimate of the computational efficiency of the method.

• Journal of the Korean Society for Heat Treatment
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• v.5 no.4
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• pp.201-208
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• 1992

An experimental study of the constitutive response of precipitation-strengthened Al-0.55wt% Zr alloy, which consists of an Al matrix precipitation-strengthened by coherent particles, ${\beta}^{\prime}(Al_3Zr)$ with $L1_2$ structure has been performed. The deformation response of the materials has been examined by stress relaxation test at 573K, 623K and 673K. It was found that there exist the threshold stress during stress relaxation and threshold stress results from the presense of ${\beta}^{\prime}(Al_3Zr)$ particles. The ratio of threshold stress and Orowan stress decreased gradually with increasing temperature. The resistance to climb-pass of particles was independent of particles size for a fixed volume fraction although the threshold for bowing and particles cutting are sensitive to the particles dimensions. The smaller particles cutted by dislocations. This behavior of dislocations in this alloy was explained in terms of the small value antiphase boundary energy. The dislocation networks wrere more extensive in spesimens subjected to stress relaxation and there were numerous areas that have a high denstiy of jogged dislocation. This experiment results indicate that the rate controlling stress relaxation process is the climb of edge dislocation over particles.

• Nuclear Engineering and Technology
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• v.52 no.2
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• pp.337-343
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• 2020

Oxide dispersed strengthened (ODS) steel is an important candidate for Gen-IV reactors. Oxide embedded in Fe can help to trap irradiation defects and enhances the strength of steel. It was observed in this study that the size of oxide has a profound impact on the depinning mechanism. For smaller sizes, the oxide acts as a void; thus, letting the dislocation bypass without any shear. On the other hand, oxides larger than 2 nm generate new dislocation segments around themselves. The depinning is similar to that of Orowan mechanism and the strengthening effect is likely to be greater for larger oxides. It was found that higher shear deformation rates produce more fine-tuned stress-strain curve. Both molecular dynamics (MD) simulations and BKS (Bacon-Knocks-Scattergood) model display similar characteristics whereby establishing an inverse relation between the depinning stress and the obstacle distance. It was found that (110)_oxide || (111)_Fe (oriented oxide) also had similar characteristics as that of (100)_oxide || (111)_Fe but resulted in an increased depinning stress thereby providing greater resistance to dislocation bypass. Our simulation results concluded that critical depinning stress depends significantly on the size and orientation of the oxide.

• Structural Engineering and Mechanics
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• v.21 no.1
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• pp.67-82
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• 2005

This study analyzes stress intensity factors for a number of periodic edge cracks in a semiinfinite medium subjected to a far field uniform applied load along with a distribution of eigenstrain. The eigenstrain is considered to be distributed arbitrarily over a region of finite depth extending from the free surface. The cracks are represented by a continuous distribution of edge dislocations. Using the complex potential functions of the edge dislocations, a simple as well as effective method is developed to calculate the stress intensity factor for the edge cracks. The method is employed to obtain the numerical results of the stress intensity factor for different distributions of eigenstrain. Moreover, the effect of crack spacing and the intensity of the normalized eigenstress on the stress intensity factor are investigated in details. The results of the present study reveal that the stress intensity factor of the periodic edge cracks is significantly influenced by the magnitude as well as distribution of the eigenstrain within the finite depth. The eigenstrains that induce compressive stresses at and near the free surface of the semi-infinite medium reduce the stress intensity factor that, in turn, contributes to the toughening of the material.

• Structural Engineering and Mechanics
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• v.86 no.4
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• pp.535-546
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• 2023

In the present paper, multiple interface cracks between a functionally graded orthotropic coating and an orthotropic half-plane substrate under concentrated loading are considered by means of the distribution dislocation technique (DDT). With the use of integration of Fourier transform the problem is reduced to a system of Cauchy-type singular integral equations which are solved numerically to compute the dislocation density on the surfaces of the cracks. The distribution dislocation is a powerful method to calculate accurate solutions to plane crack problems, especially this method is very good to find SIFs for multiple unequal cracks located at the interface. Hence this technique allows considering any number of interface cracks. The primary objective of this paper is to investigate the effects of the interaction of multiple interface cracks, load location, material orthotropy, nonhomogeneity parameters and geometry parameters on the modes I and II SIFs. Numerical results show that modes I/II SIFs decrease with increasing the nonhomogeneity parameter and the highest magnitude of SIF occurs where distances between the load location and crack tips are minimal.

• Transactions of the Korean Society of Mechanical Engineers
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• v.10 no.2
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• pp.257-264
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• 1986

무한평판에 묻혀진 크랙에 대한 응력확대계수를 결정하는 전위분포법을 반무한 평판에서의 표면크랙에 확장 적용하였다. 이를 위해 반평면에서의 전위응력의 기본 해가 간단한 복소수 응력함수형태로 얻어졌다. 평형을 이루는 절편적인 분포로부터 응력확대의 계수를 계산하는 새로운 방식을 제안하였으며, 수직표면 크랙과 묻혀진 경사크랙에 대한 기존해와 이 방법의 결과가 상호 비교되었다. 경사진 표면크랙에 대한 계산결과는 유한평판에서의 기존하는 Mapping Collocation 해석과 비교되어 좋은 일치를 보여 주었다. 구부러진 크랙과 대칭으로 가지친 크랙에 대해서는 표면크랙과 묻혀진 크랙사이에 상당한 차이가 있음이 나타났다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.779-783
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• 2011

The morphology of etch pits in commercial 4H-SiC epi-wafer were investigated by molten-KOH etching. The etching process was optimized in $525{\sim}570^{\circ}C$ at 2~10 min and the novel type of etch pits was revealed. This type of etch pits have been considered as TED (threading edge dislocation) II, its origin and nature, however, are not reported yet. In this work, the morphology and evolution of etch pits during epitaxial growth were analyzed and the different behavior between TED and TEDII was discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.132-132
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• 2011

The sheet resistance (Rs) of undoped GaN films on AlN/c-plane sapphire substrate was investigated in which the AlN films were grown by R. F. magetron sputtering method. The Rs was strongly dependent on the AlN layer thickness and semi-insulating behavior was observed. To clarify the effect of crystalline property on Rs, the crystal structure of the GaN films has been studied using x-ray scattering and transmission electron microscopy. A compressive strain was introduced by the presence of AlN nucleation layer (NL) and was gradually relaxed as increasing AlN NL thickness. This relaxation produced more threading dislocations (TD) of edge-type. Moreover, the surface morphology of the GaN film was changed at thicker AlN layer condition, which was originated by the crossover from planar to island grains of AlN. Thus, rough surface might produce more dislocations. The edge and mixed dislocations propagating from the interface between the GaN film and the AlN buffer layer affected the electric resistance of GaN film.