Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characterization of Dislocations in 4H-SiC Epitaxy Using Molten-KOH Etching

KOH Etching을 통한 4H-SiC Epitaxy 박막에서의 전위결함 거동

  • Shin, Yun-Ji (Department of Physics, Changwon National University) ;
  • Kim, Won-Jeong (Department of Physics, Changwon National University) ;
  • Moon, Jeong-Hyun (Korea Electrotechnology Research Institute, Center for Energy Efficient Semiconductors) ;
  • Bahng, Wook (Korea Electrotechnology Research Institute, Center for Energy Efficient Semiconductors)
  • 신윤지 (창원대학교 물리학과) ;
  • 김원정 (창원대학교 물리학과) ;
  • 문정현 (한국전기연구원 에너지반도체센터) ;
  • 방욱 (한국전기연구원 에너지반도체센터)
  • Received : 2011.08.05
  • Accepted : 2011.09.19
  • Published : 2011.10.01
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Abstract

The morphology of etch pits in commercial 4H-SiC epi-wafer were investigated by molten-KOH etching. The etching process was optimized in $525{\sim}570^{\circ}C$ at 2~10 min and the novel type of etch pits was revealed. This type of etch pits have been considered as TED (threading edge dislocation) II, its origin and nature, however, are not reported yet. In this work, the morphology and evolution of etch pits during epitaxial growth were analyzed and the different behavior between TED and TEDII was discussed.

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References

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