• Title/Summary/Keyword: Dual-Band VCO

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Desing of Dual-band VCO Using PBG Structure (PBG 구조를 이용한 Dual-band VCO 설계)

  • 조용기;서철헌
    • Proceedings of the IEEK Conference
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    • 2003.11c
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    • pp.64-67
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    • 2003
  • This paper presents the design of dual-band VCO using PBG structure for IEEE 802.11A/B. By adding switch circuit to the single-band VCO, we could achieve a dual-band VCO. The center frequencies of dual-band VCO are 5.93GHz(-13dBm) and 2.37GHz (3.50dBm). The phase noise is improved about l0dB by using PBG Structure.

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A Study on the Dual-band VCO for Mobile Communication Terminal using Oscillation Part Switching Circuit (발진부 귀환 스위칭회로를 이용한 이동통신 단말기용 듀얼대역 전압제어 발진기 특성에 관한 연구)

  • 오태성;이영훈
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.1
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    • pp.60-67
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    • 2002
  • In this paper, the dual band VCO of mobile communication terminal using oscillation part switching circuit is proposed. In order to model the VCO accurately, the resonator is converted the equivalent circuit which is analyzed to use numerical method and designed optimal the dual band VCO operating GSM and DCS band. In order to demonstrate the objective theory of the proposed VCO, the dual band VCO is designed and experimented. The results of experiment, it is conformed that the VCO can be used mobile communication hand phone and components of three generation mobile communication systems.

A 2.4 /5.2-GHz Dual Band CMOS VCO using Balanced Frequency Doubler with Gate Bias Matching Network

  • Choi, Sung-Sun;Yu, Han-Yeol;Kim, Yong-Hoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.4
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    • pp.192-197
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    • 2009
  • This paper presents the design and measurement of a 2.4/5.2-GHz dual band VCO with a balanced frequency doubler in $0.18\;{\mu}m$ CMOS process. The topology of a 2.4 GHz VCO is a cross-coupled VCO with a LC tank and the frequency of the VCO is doubled by a frequency balanced doubler for a 5.2 GHz VCO. The gate bias matching network for class B operation in the balanced doubler is adopted to obtain as much power at 2nd harmonic output as possible. The average output powers of the 2.4 GHz and 5.2 GHz VCOs are -12 dBm and -13 dBm, respectively, the doubled VCO has fundamental harmonic suppression of -25 dB. The measured phase noises at 5 MHz frequency offset are -123 dBc /Hz from 2.6 GHz and -118 dBc /Hz from 5.1 GHz. The total size of the dual band VCO is $1.0\;mm{\times}0.9\;mm$ including pads.

Design of Dual-Band WLAN Transmitter with Frequency Doubler (주파수 체배기를 이용한 이중대역 무선 송신부 설계)

  • Roh, Hee-Jung
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.22 no.6
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    • pp.116-126
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    • 2008
  • This paper describes the Dual-band WLAN transmitter with 2.4[GHz], 5[GHz]. Dual-band WLAN transmitter was designed at 2.4[GHz] and 5[GHz]. The Dual-band WLAN transmitter has a amplifier which operate at 2.4[GHz] and 5[GHz] frequency and two VCO(Voltage Controlled Oscillator) or VCO has a wide scope of frequency. these problem cause a size and a power consumption, The Dual-band WLAN transmitter module was proposed to solve these. the transmitter was designed to get output signals of IEEE 802.11a's 5.8[GHz] band signal using frequency multiplication way or to act a amplifier about the 2.4[GHz] band signal of IEEE 802.11b/g, according to inputed frequency and bias voltage that a eve using single transmission block. The output spectrum get the improved specification of ACPR of 4[dB], 6[dB], 16[dB] at +11[MHz], +20[MHz], +30[MHz] offset of center frequency compared to no linearization, was satisfied to transmit spectrum mask of IEEE 802.11a wireless Lan.

Low-Phase Noise Dual-band VCO Using PBG Structure (Photonic Bandgap 구조를 이용한 저 위상잡음 듀얼밴드 VCO에 관한 연구)

  • 조용기;서철헌
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.2
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    • pp.53-58
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    • 2004
  • In this paper, the low-phase dual-band VCO, by adding switching circuit with PIN diode at feedback loop of the oscillation part having negative-resistance, is realized. In order to reduce the phase noise of the VCO, PBG structure applied to the ground plane of the resonator. When applying for PBG structure, output power is -9.17㏈m and phase noise is -102㏈c/Hz at 5.25㎓, output power is -5.17㏈m and phase noise is -101㏈c/Hz at 1.8㎓, respectively.

A Dual band CMOS Voltage Controlled Oscillator of an arithmetic functionality with a 50% duty cycle buffer (50%듀티 싸이클 버퍼를 가진 산술 연산 구조의 이중 대역 CMOS 전압 제어 발진기)

  • 한윤철;김광일;이상철;변기영;윤광섭
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.10
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    • pp.79-86
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    • 2004
  • This paper proposes a dual band Voltage Controlled Oscillator(VCO) with a standard 0.3${\mu}{\textrm}{m}$ CMOS process to generate 1.07GHz and 2.07GHz. The proposed VCO architecture with 50% duty cycle circuit and a half adder(HA) was capable of producing a frequency two times higher than that of the conventional VCOs. The measurement results demonstrate that the gain of VCO and power dissipation are 561MHz/V and 14.6mW, respectively. The phase noises of the dual band VCO are measured to be -102.55dBc/Hz and -95.88dBc/Hz at 2MHz offset from 1.07GHz and 2.07GHz, respectively.

Dual-Band VCO using Composite Right/Left-Handed Transmission Line and Tunable Negative Resistanc based on Pin Diode (Composite Right/Left-Handed 전송 선로와 Pin Diode를 이용한 조절 가능한 부성 저항을 이용한 이중 대역 전압 제어 발진기)

  • Choi, Jae-Won;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.12
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    • pp.16-21
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    • 2007
  • In this paper, the dual-band voltage-controled oscillator (VCO) using the composite right/left-handed (CRLH) transmission line (TL) and the tunable negative resistance based on the fin diode is presented. It is demonstrated that the CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the phase slope of the CRLH TL, and the frequency ratio of the two operating frequencies can be a non-integer. Each frequency band of VCO has to operate independently, so we have used the tunable negative resistance based on the pin diode. When the forward bias has been into the pin diode, the phase noise of VCO is $-108.34\sim-106.67$ dBc/Hz @ 100 kHz in the tuning range, $2.423\sim2.597$ GHz, whereas when the reverse bias has been fed into the pin diode, that of VCO is $-114.16\sim-113.33$ dBc/Hz @ 100 kHz in the tuning range, $5.137\sim5.354$ GHz.

Design and Fabrication of Switchable VCO for DECT Handset (DECT 단말기용 Switchable VCO 설계 및 제작)

  • 김상태;황수설;류준규;홍성용;이재명
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.4
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    • pp.634-641
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    • 2000
  • A switchable VCO for DECT handset is designed and fabricated. In dual mode radios, a single VCO is desired to operate at two different frequencies to meet the requirement of two mode(Tx, Rx). The three design types of switchable VCO are switched resonator VCO, switched mode VCO and dual band VCO. In this paper, we use the switched resonator VCO type using pin diode switch to change the total amount of capacitance in the tank circuit. At the bias condition of 3 V and 13mA, the output power and phase noise are better than6.5dBm and -104dBc/Hz at 25khz offset from the carrier, respectively , across the operating frequency range. From these results, the fabricated switched VCO is applicable to the DECT handset.

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A study on the Frequency Synthesizer for Dual-Band Repeater (이중대역 중계기를 위한 주파수합성기의 설계에 관한 연구)

  • Kim, Jin-Sub;Byeon, Sang-Gi;Kang, Yong-Cheol
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.277-280
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    • 2005
  • In this paper, we propose a frequency synthesizer for dualband repeater. The dual-band RF technology for applications to the wireless repeater for CDMA and WCDMA mobile communications has been developed in this paper. The dualband PLL module consisted of dual-band VCO and one PLL IC has been developed. The main technological efforts for the dual-band PLL module is to suppress the intermodulation distortion by applying the miniature ceramic filter using the slow wave characteristics. The dual-band miniature RF module including dual-band PLL module and one MCU controller is very attractive for applications to the miniature dual-band RF mobile repeaters.

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A 70/140 GHz Dual-Band Push-Push VCO Based on 0.18-㎛ SiGe BiCMOS Technology (0.18-㎛ SiGe BiCMOS 공정 기반 70/140 GHz 듀얼 밴드 전압 제어 발진기)

  • Kim, Kyung-Min;Kim, Nam-Hyung;Rieh, Jae-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.2
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    • pp.207-212
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    • 2012
  • In this work, a 70/140 GHz dual-band push-push voltage controlled oscillator(VCO) has been developed based on a 0.18-${\mu}m$ SiGe BiCMOS technology. The lower band and the upper band oscillation frequency varied from 67.9 GHz to 76.9 GHz and from 134.3 GHz to 154.5 GHz, respectively, with tuning voltage swept from 0.2 to 2 V. The calibrated maximum output power for each band was -0.55 dBm and -15.45 dBm. The VCO draws DC current of 18 mA from 4 V supply.