• 제목/요약/키워드: Drivability

검색결과 71건 처리시간 0.024초

A Recessed-channel Tunnel Field-Effect Transistor (RTFET) with the Asymmetric Source and Drain

  • Kwon, Hui Tae;Kim, Sang Wan;Lee, Won Joo;Wee, Dae Hoon;Kim, Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제16권5호
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    • pp.635-640
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    • 2016
  • Tunnel field-effect transistor (TFET) is a promising candidate for the next-generation electron device. However, technical issues remain for their practical application: poor current drivability, shor-tchannel effect and ambipolar behavior. We propose herein a novel recessed-channel TFET (RTFET) with the asymmetric source and drain. The specific design parameters are determined by technology computer-aided design (TCAD) simulation for high on-current and low S. The designed RTFET provides ${\sim}446{\times}$ higher on-current than a conventional planar TFET. And, its average value of the S is 63 mV/dec.

A Study On a Lane Keeping Control in a Curved Road and Lane Changing Method to Avoid Collision of a Vehicle

  • Lee, seungchul;Kwangsuck Boo;Jeonghoon Song
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2002년도 ICCAS
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    • pp.107.2-107
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    • 2002
  • The objective of this study is to propose a lane changing and keeping method on a curved road for an automatic guidance of a vehicle. It is well known that the speed control of a vehicle in a curved road is essential in terms of vehicle stability and passenger safety because centrifugal force makes a vehicle to be on out of lane. And it is also natural to avoid the collision with other cars or obstructions with keeping the stability and drivability. The vehicle pose and the road curvature were calculated by geometrically fusing sensor data from camera image, tachometer and steering wheel encoder though the Perception Net in which not only the state variables, but also the corresponding uncer...

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A Design Evaluation of Strained Si-SiGe on Insulator (SSOI) Based Sub-50 nm nMOSFETs

  • Nawaz, Muhammad;Ostling, Mikael
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제5권2호
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    • pp.136-147
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    • 2005
  • A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

An Inner-spherical Continuously Variable Transmission for Electric Bicycles

  • Park, Moon-Woo;Lee, Hyoung-Woo;Park, No-Gill
    • International Journal of Precision Engineering and Manufacturing
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    • 제9권1호
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    • pp.7-11
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    • 2008
  • A new continuously variable transmission (CVT) for electric bicycles was developed using a traction drive mechanism with inner and outer spherical rotors. This electric bicycle CVT permits three propulsion modes: human-power only, motor-power only, or a combination of motor power and human power. In addition, the electric bicycle CVT has high power efficiency, large torque capacity, improved drivability, and good packageability. A prototype was manufactured based on a conceptual design, a performance analysis, and a detailed design. This prototype has a rated power of 250 W and input motor speed of 20 rad/s for an overall speed ratio in the range 0.3-1.2. A bench test was conducted to measure the power transmission performance of the prototype.

Linearity of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

  • Lee, Hyun Kook;Choi, Woo Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권6호
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    • pp.551-555
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    • 2013
  • Linearity characteristics of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and $SiO_2$-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and $SiO_2$-only TFETs. It is because HG TFETs show higher transconductance ($g_m$) and current drivability than $SiO_2$-only TFETs and $g_m$ less sensitive to gate voltage than high-k-only TFETs.

Open Loop 연료공급계의 L. P. G 차량에서 공기청정기 필터의 흡기저항이 차량성능에 미치는 영향 (An Effect of Car Performance Influenced to Absorbing Resistane of Air-cleaner Filter for the L. P. G Vehicle of Open Loop Fuel System)

  • 신용화;김기형;정종안
    • 한국안전학회지
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    • 제10권4호
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    • pp.36-46
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    • 1995
  • The interest and purpose of this study is to control of air-fuel ratio and develop control device of a spark ignition LPG engine with adopting open loop fuel system. The air-fuel ratio is derived by considering airflow resistane of air cleaner element. The result shows that air-fuel ratio becomes more and more rich when airflow resistance increases. Experiments about the influence of airflow resistance on the engine performance, drivability and emissions are performed. Therefore, it is known that open-loop fuel system depends on the absorbing resistance of air-cleaner.

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마찰패드의 마모를 고려한 건식 클러치의 접촉점 추종 알고리즘 개발 (Development of Contact Point Estimation Algorithm of Dry type Clutch with Considering the friction pad wear)

  • 김성모;김모성;신창우;임원식;차석원
    • 한국생산제조학회지
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    • 제20권6호
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    • pp.692-696
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    • 2011
  • A clutch is a very important component when engine starts and gear shifting is needed. The clutch the most commonly used is the dry clutch. This type of clutch has pads, and they are worn after disengagement of clutch little by little. The characteristics of the clutch changes as these pads wear, so wear needs to be measured, and the clutch should be controlled for proper operation. In this study, the clutch contact point estimation algorithm has been developed. From this algorithm, clutch force map changes depending on wear, and the clutch operates properly. We also see the shifting transient of a vehicle for drivability with throttle valve position control and synchronizer movement.

자동변속장치의 간접식 과도토오크 제어기 설계에 관한 연구 (A Study on the Design of an Indirect Shift Transient Torque Controller for an Automatic Power Transmission System)

  • 정헌술;이교일
    • 한국자동차공학회논문집
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    • 제2권5호
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    • pp.110-120
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    • 1994
  • Due to the increasing demands in comfortable drivability, most motor companies are developing their own unique shift controller to suppress the shift shock induced by gear change. For a typical automatic transmission system, the dynamic constraints of friction clutch was clarified for efficient program development and major factors effecting the shift transient was confirmed by simulation study. The MIMO LQG/LTR controller was designed to control the turbine and corresponding gear speed. By establishing the control strategy recalling transient response during shift the speed controller mentioned above was used as an indirect torque controller. Consequently a new concept for a systematic design method of shift controller applicable to wide-varying systems was suggested which is time efficient and cost efficient saving a lot of experimental study.

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해상 강관말뚝의 설계 및 항타시공관리 사례연구 (A Case Study on the Design and Drivability Criteria of Steel Pile in Offshore)

  • 송명준;박영호;유석준;심동현
    • 기술발표회
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    • 통권2006호
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    • pp.75-85
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    • 2006
  • The project comprised the construction of the new oil pier and associated topside facilities and demolition of exiting south pier. The site is located approximately 33km south of Kuwait city at MAA refinery. The approach trestle and berth structures of the new oil pier were designed to be supported by steel tubular piles Total 2,480 numbers of piles(795 piles at Approach Trestle, 1187 piles at Berth 1 -4 and 498 piles at Berth 5-6) had to be driven through the calcareous silty sand In this study, the design procedures for offshore steel pipe piles, evaluation for the compression and tension capacities by static and dynamic load test and effective driving criteria by the final set values are discussed

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재산화된 질화 산화막을 게이트 절연막으로 사용한 MOSFET의 특성 (The Characteristics of MOSFET with Reoxidized Nitrided Oxide Gate Dielectrics)

  • 양광선;박훈수;김봉렬
    • 전자공학회논문지A
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    • 제28A권9호
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    • pp.736-742
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    • 1991
  • N$^{+}$poly gate NMOSFETs and p$^{+}$ poly gate (surface type) PMOSFETs with three different gate oxides(SiO2, NO, and ONO) were fabricated. The rapid thermal nitridation and reoxidation techniques have been applied to gate oxide formation. The current drivability of the ONO NMOSFET shows larger values than that of the SiO2 NMOSFET. The snap-back occurs at a lower drain voltage for SiO$_2$ cases for ONO NMOSFET. Under the maximum substrate current bias conditions, hot-carrier effects inducting threshold voltage shift and transconductance degradation were investigated. The results indicate that ONO films exhibit less degradation in terms of threshold voltage shift. It was confirmed that the ONO samples achieve good improvement of hot-carrier immunity. In a SiO$_2$ SC-PMOSFET, with significant boron penetration, it becomes a depletion type (normally-on). But ONO films show excellent impurity barrier properties to boron penetration from the gate.

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