• Title/Summary/Keyword: Drift diffusion

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열방정식 입장에서 바라본 세 방정식

  • 송종철
    • Journal for History of Mathematics
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    • v.15 no.3
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    • pp.59-64
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    • 2002
  • This paper investigates a history of Fourier Series for the heat equation and how deeply it is related to modern famous three equations, Navier-Stokes equations in fluid dynamics, drift-diffusion equations in semiconductor, and Black-Scholes equation in finance. We also propose improved models for the heat equation with finite propagation speeds.

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EDISON 시뮬레이션을 통한 P-N 접합 공핍 폭 비교 분석

  • Lee, Cho-Hui
    • Proceeding of EDISON Challenge
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    • 2014.03a
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    • pp.498-500
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    • 2014
  • EDISON 나노물리 사이트에 탑재된 Drift-Diffusion 기반 bulk P/N Junction Diode 특성 해석용 SW를 이용해 P-N접합의 특성을 파악해보았다. n과 p영역에서의 순수 도너와 억셉터 농도를 통해 내부 전위 장벽을 구한다. 구한 내부 전위 장벽을 통해 공핍폭 W를 구할 수 있다. 이 논문에서는 일방접합의 공핍영역폭을 표현하는 식과 시뮬레이션을 통해 얻어진 공핍영역폭을 비교 분석하였다.

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Fabrication of a fast Switching Thyristor by Proton Irradiation Method (양성자 조사법에 의한 고속스위칭 사이리스터의 제조)

  • Kim, Eun-Dong;Zhang, Changli;Kim, Sang-Cheol;Kim, Nam-Kyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.12
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    • pp.1264-1270
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    • 2004
  • A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After making symmetric thyristor dies with a voltage rating of 1,600 V from 350 $\mu$m thickness of 60 $\Omega$ㆍcm NTD-Si wafer and 200 $\mu$m width of n-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7 MeV proton beam showed a superior trade-off relationship of $V_{TM}$ = 1.55 V and $t_{q}$ = 15 $\mu$s attributed to a very narrow layer of short carrier lifetime(~1 $\mu$s) in the middle of its n-base drift region. To explain the small increase of $V_{TM}$ , we will introduce the effect of carrier compensation at the low carrier lifetime region by the diffusion current.ffusion current.t.

Ionization and Attachment Coefficients in CF4 (CF4 기체에서의 전리와 부착계수)

  • Kim, Sang-Nam
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.60 no.1
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    • pp.27-31
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    • 2011
  • In this paper, the electron transport characteristics in $CF_4$ has been analysed over the E/N range 1~300[Td] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal diffusion coefficient, the ratio of the diffusion coefficient to the mobility, electron ionization and attachment coefficients, effective ionization coefficient, mean energy, collision frequency and the electron energy distribution function. The electron energy distribution function has been analysed in $CF_4$ at E/N=5, 10, 100, 200 and 300[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte Carlo simulation have been compared with experimental data by Y. Nakamura and M. Hayashi. The swarm parameter from the swarm study are expected to serve as a critical test of current theories of low energy electron scattering by atoms and molecules, in particular, as well as crucial information for quantitative simulations of weakly ionized plasmas.

A Diffusion Model for a System Subject to Random Shocks

  • Lee, Eui-Yong;Song, Mun-Sup;Park, Byung-Gu
    • Journal of the Korean Statistical Society
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    • v.24 no.1
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    • pp.141-147
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    • 1995
  • A diffusion model for a system subject to random shocks is introduced. It is assumed that the state of system is modeled by a Brownian motion with negative drift and an absorbing barrier at the origin. It is also assumed that the shocks coming to the system according to a Poisson process decrease the state of the system by a random amount. It is further assumed that a repairman arrives according to another Poisson process and repairs or replaces the system i the system, when he arrives, is in state zero. A forward differential equation is obtained for the distribution function of X(t), the state of the systme at time t, some boundary conditions are discussed, and several interesting characteristics are derived, such as the first passage time to state zero, F(0,t), the probability of the system being in state zero at time t, and F(0), the limit of F(0,t) as t tends to infinity.

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Diffusion coefficients of electrons in $SF_6$-Ar Mixtures Gas used by MCS-BEq Algorithm ($SF_6$-Ar 혼합기체(混合氣體)의 MCS-BE_q알고리즘에 의한 확산계수)

  • Kim, Sang-Nam;Ha, Sung-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.1150-1153
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    • 2004
  • Diffusion coefficients Of electrons in $SF_6$-Ar mixtures gas used by MCS- BEq algorithm has been analysed over the E/N range $30\sim300$(Td) by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight(TOF) method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

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DIFFUSIVE SHOCK ACCELERATION WITH MAGNETIC FIELD AMPLIFICATION AND ALFVÉNIC DRIFT

  • Kang, Hyesung
    • Journal of The Korean Astronomical Society
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    • v.45 no.5
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    • pp.127-138
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    • 2012
  • We explore how wave-particle interactions affect diffusive shock acceleration (DSA) at astrophysical shocks by performing time-dependent kinetic simulations, in which phenomenological models for magnetic field amplification (MFA), Alfv$\acute{e}$nic drift, thermal leakage injection, Bohm-like diffusion, and a free escape boundary are implemented. If the injection fraction of cosmic-ray (CR) particles is ${\xi}$ > $2{\times}10^{-4}$, for the shock parameters relevant for young supernova remnants, DSA is efficient enough to develop a significant shock precursor due to CR feedback, and magnetic field can be amplified up to a factor of 20 via CR streaming instability in the upstream region. If scattering centers drift with Alfv$\acute{e}$n speed in the amplified magnetic field, the CR energy spectrum can be steepened significantly and the acceleration efficiency is reduced. Nonlinear DSA with self-consistent MFA and Alfv$\acute{e}$nic drift predicts that the postshock CR pressure saturates roughly at ~10 % of the shock ram pressure for strong shocks with a sonic Mach number ranging $20{\leq}M_s{\leq}100$. Since the amplified magnetic field follows the flow modification in the precursor, the low energy end of the particle spectrum is softened much more than the high energy end. As a result, the concave curvature in the energy spectra does not disappear entirely even with the help of Alfv$\acute{e}$nic drift. For shocks with a moderate Alfv$\acute{e}$n Mach number ($M_A$ < 10), the accelerated CR spectrum can become as steep as $E^{-2.1}$ - $E^{-2.3}$, which is more consistent with the observed CR spectrum and gamma-ray photon spectrum of several young supernova remnants.

Drift Velocities for Electrons in $SF_6$-Ar Mixtures Gas by MCS-Beq Algorithm (MCS-BEq에 의한 $SF_6-Ar$혼합기체(混合氣體)의 전자(電子) 이동속도(移動速度))

  • Kim, Sang-Nam
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.54 no.1
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    • pp.29-33
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    • 2005
  • Energy distribution function for electrons in $SF_6$-Ar mixtures gas by MCS-BEq algorithm has been analysed over the E/N range $30{\sim}300$[Td] by a two term Boltana equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other, authors, experimentally the electron swarm parameters for 0.2[%} and 0.5[%] $SF_6$-Ar mixtures were measured by time-of-flight(TOF) method. The result show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values. The results obtained from Booltemann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

Re-determination of inelastic collision cross sections for $C_{3}F_{8}$ molecular gas in $C_{3}F_{8}-Ar$ mixture gases ($C_{3}F_{8}-Ar$혼합가스 상에서 $C_{3}F_{8}$분자가스의 비탄성단면적의 재결정)

  • Jeon, Byoung-Hoon
    • Proceedings of the KIEE Conference
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    • 2005.11a
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    • pp.21-23
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    • 2005
  • The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ in $C_{3}F_{8}-Ar$ mixture gases were measured by Double shutter drift tube and calculated by multi-term approximation of the Boltzmann equation over the wide E/N range from 0.03 to 100 Td. And an inelastic collision cross sections for $C_{3}F_{8}$ molecular gas were redetermined for quantitative characteristic analysis.

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Analysis of Electron Transport in InAlAs/InGaAs HBT by Hybride Monte Carlo Simulation (Hybrid Monte Carlo 시뮬레이션에 의한 InAlAs/InGaAs HBT의 전자전송 해석)

  • 송정근;황성범;이경락
    • Electrical & Electronic Materials
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    • v.10 no.9
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    • pp.922-929
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    • 1997
  • As the size of semiconductor devices shrinks in the horizontal as well as vertical dimension it is difficult to estimate the transport-velocity of electron because they drift in non-equilibrium with a few scattering. In this paper HYbrid Monte Carlo simulator which employs the drift-diffusion model for hole-transport and Monte Carlo model for electron-transport in order to reduce the simulation time and increase the accuracy as well has been developed and applied to analyze the electron-transport in InAlAs/InGaAs HBT which is attractive for an ultra high speed active device in high speed optical fiber transmission systems in terms of the velocity and energy distribution as well as cutoff frequency.

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