• 한국표면공학회지
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• 제45권4호
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• pp.174-180
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• 2012

Low pressure inductively coupled plasma characteristics of argon and oxygen are numerically simulated for a 400 mm rectangular type system with a plasma fluid model. The results showed lower power absorption profile at the corner than a circular one in a 13.56 MHz driven 1.5 turn antenna system with a drift-diffusion and quasi-neutrality assumption. Ions controlled by electric field are more non-uniform than metastables and the power absorption profile of oxygen plasma is affected by horizontal gas flow pattern to show 25% lower power absorption at the pumping flange side. Oxygen negative ions which are generated in electron collisional dissociation of oxygen molecules was calculated as 0.1% of oxygen atoms with similar spatial profile.

• 재무관리연구
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• 제20권2호
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• pp.73-94
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• 2003

일반적으로 이자율예측모형은 특정한 이자율 분포모형을 가정하여 모수적 방법에 의해 추정되었다. 그러나 특정한 분포모형을 가정한다는 것은 예측능력을 저하시킬 수 있다는 단점이 있다. 따라서 이자율변화에 특정한 분포모형을 가정하지 않는 비모수적 추정이 이자율 예측의 우월한 방법으로 제시되었다. 본 논문에서는 통화안정증권을 대상으로 이자율 예측 모형을 모수적 방법과 비모수적 방법으로 추정한다. 다음 이자율의 시장위험과 채권가격을 결정하여 두 방법 사이에 유의한 차이가 있는가를 분석한다. 1999년 8월 9일부터 2003년 2월 7일까지 통화안정증권의 일별, 주별 자료를 사용하여 분석한다. 액면이자 효과를 제거하기 위해 복리채만을 분석대상으로 한다. 모수적 방법을 이용할 때 이자율 변화의 추세항은 선형으로 나타나지만 변동성항은 이자율변화에 비해 급격히 변하는 비선형을 나타낸다. 비모수적 분석방법을 이용할 때 추세항과 변동성항 모두 이자율 변화에 비해 급격히 변하는 비선형을 나타낸다. 모수적 방법과 비교하여 추세항은 다른 결과를, 그리고 변동성항은 같은 결과를 보인다. 추세항과 변동성항의 예측을 감안하여 이자율의 시장위험 및 채권가격을 산출한 결과 모수적 방법과 비모수적 방법은 유의적인 차이를 보인다. 이는 이자율 및 이자율의 시장위험가격 예측은 비모수적 방법을 사용하는 것이 적합하다는 것을 뜻한다.

• Nuclear Engineering and Technology
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• 제55권12호
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• pp.4357-4366
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• 2023

MARS-KS, a domestic regulatory confirmatory code of Republic of Korea, had been developed by integrating RELAP5/MOD2 and COBRA-TF. The integration of COBRA-TF allowed to extend the capability of MARS-KS, limited to one-dimensional analysis, to multi-dimensional analysis. The use of COBRA-TF was mainly focused on subchannel analyses for simulating multi-dimensional behavior within the reactor core. However, this feature has been remained as a legacy without ongoing maintenance. Meanwhile, MARS-KS also includes its own multidimensional component, namely MULTID, which is also feasible to simulate three-dimensional convection and diffusion. The MULTID is capable of modeling the turbulent diffusion using simple mixing length model. The implementation of the turbulent mixing is of importance for analyzing the reactor core where a disturbing cross-sectional structure of rod bundle makes the flow perturbation and corresponding mixing stronger. In addition, the presence of this turbulent behavior allows the secondary transports with net mass exchange between subchannels. However, a series of assessments performed in previous studies revealed that the turbulence model of the MULTID could not simulate the aforementioned effective mixing occurred in the subchannel-scale problems. This is obvious consequence since the physical models of the MULTID neglect the effect of mass transport and thereby, it cannot model the void drift effect and resulting phasic distribution within a bundle. Thus, in this study, the turbulence mixing model of the MULTID has been improved by means of the inter-channel mixing model, widely utilized in subchannel analysis, in order to extend the application of the MULTID to small-scale problems. A series of assessments has been performed against rod bundle experiments, namely GE 3X3 and PSBT, to evaluate the performance of the introduced mixing model. The assessment results revealed that the application of the inter-channel mixing model allowed to enhance the prediction of the MULTID in subchannel scale problems. In addition, it was indicated that the code could not predict appropriate phasic distribution in the rod bundle without the model. Considering that the proper prediction of the phasic distribution is important when considering pin-based and/or assembly-based expressions of the reactor core, the results of this study clearly indicate that the inter-channel mixing model is required for analyzing the rod bundle, appropriately.

• 전기전자학회논문지
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• 제11권4호
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• pp.272-278
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• 2007

본 논문에서는 최근 고출력 및 고온 분야의 반도체 분야에 널리 이용되고 있는 AlGaN/GaN 고 전자 이동도 트랜지스터 (High Electron Mobility Transistor, HEMT) 에 대해 DC (direct current) 특성과 열 특성을 기판을 달리하며 시뮬레이션을 수행하였다. 일반적으로 HEMT 소자의 전자 이동도 및 열전도 특성은 기판의 영향이 그 특성을 크게 좌우한다. 이러한 문제점으로 인해 GaN 기반의 HEMT 소자의 기판에 대한 연구가 활발히 진행되고 있다. 따라서, 일반적인 Drift-Diffusion 모델과 열 모델을 이용하여 Si, sapphire, SiC (silicon carbide)으로 각각 기판을 변화시키며 시뮬레이션을 하였다. 열 모델 시뮬레이션은 온도를 각각 300, 400, 500K로 변화시키며 그 결과를 비교, 해석 하였다. 전류-전압 (I-V) 특성을 T= 300 K, $V_{GS}$=1 V의 조건에서 시뮬레이션 한 결과, 드레인 포화전류 ($I_{D,max}$)의 값과 sapphire 기판은 189 mA/mm, SiC 기판은 293 mA/mm, Si 기판은 258 mA/mm 를 나타내었다. 또한 T= 500 K에서 최대 전달컨덕턴스($G_{m,max}$)는 각각 38, 50, 31 mS/mm 를 나타내었다.

• 대한교통학회지
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• 제20권5호
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• pp.67-79
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• 2002

교통량, 교통밀도, 교통류 속도 등, 교통류 변수에 대한 현재까지의 불확실한 정의와 연속적 파동방정식의 거시적 교통류 해석상의 문제점을 지적하고 이를 개선하기 위해 교통류 변수들에 대한 새로운 확률적 정의를 제시하고 이들의 성격을 규명하였다. 이러한 새로운 교통류 변수들에 대한 새로운 정의를 바탕으로 미시적 운전자 행동을 세밀하게 수용할 수 있고 많은 교통환경에서 연속적 파동 방정식을 대체하여 교통류 변수들과 통행시간을 예측할 수 있는 미분방정식 체계를 확률 미분방적식을 이용하여 도출하였다. 도출된 미분 방정식을 단일 차량의 시공 괘적에 적용해 보았다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.176-176
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• 2003

The effects of oxide thickness and gate length of MgO/GaN metal oxide semiconductor field effect transistors (MOSFETs) on I-V, threshold voltage and breakdown voltage characteristics were examined using a drift-diffusion model. The saturation drain current scales in an inverse logarithmic fashion with MgO thickness and is < 10$^{-3}$ A.${\mu}{\textrm}{m}$$^{-1}$ for 0.5 ${\mu}{\textrm}{m}$ gate length devices with oxide thickness > 600 $\AA$ or for all 1 ${\mu}{\textrm}{m}$ gate length MOSFETs with oxide thickness in the range of >200 $\AA$. Gate breakdown voltage is > 100 V for gate length >0.5 ${\mu}{\textrm}{m}$ and MgO thickness > 600 $\AA$. The threshold voltage scales linearly with oxide thickness and is < 2 V for oxide thickness < 800 $\AA$ and gate lengths < 0.6 ${\mu}{\textrm}{m}$. The GaN MOSFET shows excellent potential for elevated temperature, high speed applications.

• Journal of Electrical Engineering and Technology
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• 제9권1호
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• pp.307-312
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• 2014

We present a full finite element analysis for plasma discharge in etching process of semiconductor circuit. The charge transport equations of hydrodynamic diffusion-drift model and the electric field equation were numerically solved in a fully coupled system by using a standard finite element procedure for transient analysis. The proposed method was applied to a real plasma reactor in order to characterize the plasma sheath that is closely related to the yield of the etching process. Throughout the plasma discharge analysis, the base electrode of reactor was tested and modified for improving the uniformity around the wafer edge. The experiment and numerical results were examined along with SEM data of etching quality. The feasibility and usefulness of the proposed method was shown by both numerical and experimental results.

• 반도체디스플레이기술학회지
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• 제8권3호
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• pp.31-37
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• 2009

This paper presents one and two dimensional simulation results with discontinuous features (shocks) of capacitively coupled rf plasmas. The model consists of the first two and three moments of the Boltzmann equation for the ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The local field and drift-diffusion approximations are not employed, and as a result the charged species conservation equations are hyperbolic in nature. Hyperbolic equations may develop discontinuous solutions even if their initial conditions are smooth. Indeed, in this work, secondary electron emission is shown to produce transient electron shock waves. These shocks form at the boundary between the cathodic sheath (CS) and the quasi-neutral (QN) bulk region. In the CS, the electrons emitted from the electrode are accelerated to supersonic velocities due to the large electric field. On the other hand, in the QN the electric field is not significant and electrons have small directed velocities. Therefore, at the transition between these regions, the electron fluid decelerates from a supersonic to a subsonic velocity in the direction of flow and a jump in the electron velocity develops. The presented numerical results are consistent with both experimental observations and kinetic simulations.