• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.4
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• pp.25-35
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• 2002

This work describes an 8b 200MHz time-interleaved subranging analog-to-digital converter (ADC) based on a single-poly digital CMOS process. Two fine ADCs for lower digital bits of the proposed ADC employ a time-sharing double-channel architecture to increase system speed and a new reference voltage switching scheme to reduce settling time of the reference voltages and chip area. The proposed intermeshed resistor string, which generates reference voltages for fine ADCs, improves linearity and settling time of the reference voltages simultaneously. The proposed sample- and-hold amplifier(SHA) is based on a highly linear common-drain amplifier and passive differential circuits to minimize power consumption and chip area with 8b accuracy and employs input dynamic common mode feedback circuits for high dynamic performance at a 200MHz sampling rate. A new encoding circuit in a coarse ADC simplifies the signal processing between the coarse ADC and two successive fine ADCs.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.23 no.5
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• pp.969-976
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• 2013

The information protection systems of company are intended to detect all weak points, intrusion, document drain. All actions of people in company are recorded and can check persistently. On the other hand, what analyze security log generated by these systems becomes more difficult. Most staff who manages the security systems, and analyze log is more incomprehensible than a user or a person of drain for an information distribution process of the work-site operations and the management procedure of the critical information. Such a reality say the serious nature of the internal information leakage that can be brought up more. While the research on the big data proceeds actively recently, the successful cases are being announced in the various areas. This research is going to present the improved big data processing technology and case of the security field.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.33 no.4
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• pp.21-27
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• 2001

Korean traditional paper (Hanji) making technology has adopted two kinds of sheet forming processes, which called "Oebal-choji": and "Ssangbal-choji". The sheet forming process of Oebal-choji is an original method developed in Korea. At first, paper stock is dipped onto the mold and flow away in the forward direction. Then, paper stock is scooped again and rhythmically rocked from side to side, this work is repeated several times. Through this operation the fibers intertwine and paper layers are formed. Ssangbal-choji is almost same as the Nagashizuki, which used in Japan. In this method, paper stock is scooped onto the mold and rhythmically rocked backwards and forwards several times, the water drains slowly through the bamboo screen and then sheet is formed. Tamezuki method is used in Japan and China. This is a method in which the mold is dipped into the paper stock once and left to drain. In the Ssangbal-choji and Nagashizuki methods, the most of excess solution is cast out while in the Tamezuki all of it is allowed to drain through the mold. This study was carried out to investigate the physical properties of the Hanjis that were made by Oebal-choji, Ssangbal-choji, Nagashizuki, and Tamezuki sheet forming processes. The results were follows; Physical properties of the Oebal-choji Hanji were better than those of Ssangbal-choji, Nagashizuki, and Tamezuki. Oebal-choji Hanji made little difference of paper strength between MD and CD, but Ssangbal-chjo and Nagashizuki Hanjis made wide difference. And there are no difference of paper strength between MD and CD on the Tamezuki Hanji. On the confocal laser scanning microscopy (CLSM) observation of the Hanjis, Oebal-choji made well crossed fiber orientation than those of other forming processes.r forming processes.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.879-882
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• 2015

In this work, we have analyzed the characteristics of vertical nanowire GAA MOSFET according to channel width and the type of channel doping through the simulation. First, we compared and analyzed the characteristics of designed structures which have tilted shapes that ends of drains are fixed as 20nm and ends of sources are 30nm, 50nm, 80nm and 110nm. Second, we designed the rectangular structure which has uniform width of drain, channel and source as 50nm. We used it as a standard and designed trapezoidal structure which is tilted so that the end of drain became 20nm and reverse trapezoidal structure which is tilted so that the end of source became 20nm. We compared and analyzed the characteristic of above three structures. For the last, we used the rectangular structure, divided its channel as five parts and changed the type of the five parts of doping concentration variously. In the first simulation, when the channel width is the shortest, in the second, when the structure is trapezoid, in the third, when the center of channel is high doped show the best characteristics.

• Journal of Ecology and Environment
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• v.47 no.3
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• pp.157-167
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• 2023

Background: The most hazardous wastewater sources in the northern part of the Middle Nile Delta, Egypt; receiving a massive amount of agricultural, industrial, and sewage drainage are Kitchener drain which is one of the tallest drainage systems, and Burullus Lake which represents the 2nd largest Egyptian coastal lake. Results: The current work is to determine the abundance and frequency of cyanophytes, chlorophytes, and bacillariophytes and the correlation between them and environmental abiotic components. Among sixty nine microalgal species, 19 species are belong Cyanophyta, 26 belong Chlorophyta and 24 belong Bacillariophyta. Genus Scenedesmus (Chlorophyta) was the most abundant in the study area (13 species), followed by Genus Oscillatoria (9 species) and Genus Navicula (7 species). Nostoc muscorum and Chlorella vulgaris were the most common and recorded in all sites (100% of the locations) under study. The application of the two-way indicator species analysis (TWINSPAN) and detrended correspondence analysis revealed agglomerating of 4 groups (communities) at 4th level of classification and reasonable segregation between these groups. Zinc, cadmium and lead were showed the highest levels (0.26±0.03, 0.26±0.06, and 0.17±0.01 ppm, respectively). Conclusions: The correlation analysis between water and community variables indicated a high negative correlation of total algae richness with nickel (r = -0.936, p < 0.01). Cyanophyta and Bacillariophyta were correlated negatively (r = -0.842, p < 0.01). However, Chlorophyta showed a negative richness with each of Ni and Pb (r = -0.965, -0.873, respectively) on one hand and a high positive correlation was revealed (r = 0.964) with all environmental variables on the other hand.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.4
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• pp.266-272
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• 2009

In the present work three dimensional process and device simulations were employed to study the performance variations with RTA. It is observed that with the increase in RTA temperature, the arsenic dopants from the source /drain region diffuse laterally under the spacer region and simultaneously acceptors (Boron) are redistributed from the central axis region of the fin towards the Si/SiO2 interface. As a consequence both drive current and peak cut-off frequency of an n-FinFET are observed to improve with RTA temperatures. Volume inversion and hence the flow of carries through the central axis region of the fin due to reduced scattering was found behind the performance improvements with increasing RTA temperature.

• Proceedings of the KSR Conference
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• 2003.10b
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• pp.176-181
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• 2003

Damages by vibration and noise due to the construction performance are increasing. The rise of construction demand and enlargement of equipments are major reasons of this damage. As a result, the enmity of the people is provoked and this appears to be an obstacle of construction work. Especially, in case of ground improvement construction. Casing pipe is inserted into the Sand Drain, Sand Compaction Pile and Vibrated Crushed-stone Pile by vibration power when carrying out. Hence, a pillar is formed and it creates vibration and noise. This causes a lot of restrictions to construction condition. The low Vibration and low noise construction equipments uses earth auger and hydrulic cylinder for insertion and chopping operation instead of vibro hammer, which is the source of vibration and noise. This minimize ground disturbanceand decrease vibration and noise successfully, but increase chopping effect greatly. Thus, this new equipment is not only suitable for environment but also excellent engineering method of construction.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.605-608
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• 2006

The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above $10^6$ are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80 %, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around $25\;cm^2/Vs$, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.74-77
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• 2006

Thin $AuO_x$ layer was formed by $O_2$ plasma treatment on Au electrode. The surface work function of plasma treatment showed higher by 0.5 eV than that of bare Au, reducing the hole injection barrier at the Au/pentacene interface. Using $O_2$ plasma-treated Au source-drain electrodes, the field-effect mobility of bottom-contact pentacene-OTFT was increased from 0.05 to 0.1 $cm^2/Vs$.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1413-1415
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• 2005

The OTFT performance depends strongly on the interfacial properties between an organic semiconductor and ${\alpha}$ metal electrode. The contact resistance is critical to the current flow in the device. The contact resistance arises mainly from the Schottky barrier formation due to the work function difference between the semiconductor and electrodes. We doped pentacene/source-drain interfaces with $F_4TCNQ$ (2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane), resulting in p-doped region at the SD contacts, in order to solve this problem. We found that the mobility increased and the threshold voltage decreased.