Enhanced hole injection by oxygen plasma treatment on Au electrode for bottom-contact pentacene organic thin-film transistors

  • Kim, Woong-Kwon (Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)) ;
  • Hong, Ki-Hyon (Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)) ;
  • Kim, Soo-Young (Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH)) ;
  • Lee, Jong-Lam (Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH))
  • Published : 2006.08.22

Abstract

Thin $AuO_x$ layer was formed by $O_2$ plasma treatment on Au electrode. The surface work function of plasma treatment showed higher by 0.5 eV than that of bare Au, reducing the hole injection barrier at the Au/pentacene interface. Using $O_2$ plasma-treated Au source-drain electrodes, the field-effect mobility of bottom-contact pentacene-OTFT was increased from 0.05 to 0.1 $cm^2/Vs$.

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