• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.281-287
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• 1998

$BiNbO_4$ ceramics doped with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) were sucessfully sintered at $900^{\circ}C$ through the firing process with Ag electrode. The BNC3V7 shows typically Dielectric constant of 44.3, Thermal Coefficient of resonance Frequency(TCF) of 2 ppm/$^{\circ} and $Qxf_o$ value of 22,000 GHz. The laminated chip Low Pass Filter (LPF) is very sensitive to chip processing parameters, was confirmed by the computer simulation as a function of Q(Quality factors), filter size, capacitor layer thickness, inductor pattern widths. The multilayer type LPF was fabricated by screen-printing with Ag electrode after tape casting and then compared with the simulated characteristics. The results show that characterization of band pass width was similar to that of designed ones.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.60.1-60
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• 1998

• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.84-90
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• 2019

The varistor properties and stability against dc-accelerated stress of $V_2O_5-Mn_3O_4-Co_3O_4-Dy_2O_3-Nb_2O_5-Bi_2O_3$ (VMCDNB)-doped zinc oxide ceramics sintered at $850-925^{\circ}C$ were investigated. Increasing the sintering temperature increased the average grain size from 4.6 to 8.7 mm and decreased the density of the sintered pellet density from 5.54 to $5.42g/cm^3$. The breakdown field decreased from 5919 to 1465 V/cm because of the increase in the average grain size. Zinc oxide ceramics sintered at $875^{\circ}C$ showed the highest nonlinear coefficient (43.6) and the highest potential barrier height (0.96 eV). Zinc oxide ceramics sintered at $850^{\circ}C$ showed the highest stability: the variation rate of the breakdown field was -2.0% and the variation rate of the nonlinear coefficient was -23.3%, after application of the specified stress (applied voltage/temperature/time).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.233-235
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• 2004

Shaped single crystals of Bi : $Y_3Ga_5O_{12}$(Bi = 0.041, 0.047 and 0.061 mol%) were grown by the micro-pulling-down method. Optical absorption spectra show an absorption band at 288 nm ascribed to the lowest energy $6s^2$ \longrightarrow 6s6p transition of $Bi^{3+}$ , while luminescence spectra demonstrate the band at 314 nm ascribed to the reverse radiative transition of the excited $Bi^{3+}$ centres. At room temperature, dominant decay time component was found to be about 440 ns with a minor slower component 580 ns.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.555-560
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• 2014

In this paper, in order to develop outstanding Pb-free composition ceramics, the $Fe_2O_3$-doped ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ + 0.3 wt% $Bi_2O_3$ + x wt% $Fe_2O_3$ (x= 0~1.0 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effect of $Fe_2O_3$-doping on their microstructure and electrical properties were investigated. XRD diffraction pattern studies confirm that $Fe_2O_3$ completely diffused into the NKL-NST lattice to form a new stable soild solution with $Fe^{3+}$ entering the $Nb^{5+}$, $Sb^{5+}$ and $Ta^{5+}$ of B-site. And, phase structure of all the ceramics exhibited pure perovskite phase and no secondary phase was found in the ceramics. The ceramics doped with 0.6 wt% $Fe_2O_3$ have the optimum values of piezoelectric constant($d_{33}$), planar piezoelectric coupling coefficient($k_p$) and mechanical quality factor($Q_m$) : $d_{33}$ = 233 [pC/N], $k_p$= 0.44, $Q_m$= 95. These results indicate that the ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ +0.3 wt% $Bi_2O_3$ + 0.6 wt% $Fe_2O_3$ ceramic is a promising candidate for lead-free piezoelectric ceramics.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.553-561
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• 1993

In this study, thr effect of $Bi_2O_3$ and BN addition as grain boundary modifiers on sintering and electrical properties of semiconducting PTCR(Positive Temperature Coefficient of Resistivity) mate rial were analyzed using TMA, XRD and Complex Impedance Spectroscopy method. Bismut.h Ox~de and Boron Nitride were added to Y-doped $BaTiO_3$ respectively. Bismuth sesquioxide up to O.lmol%solubil~ ty limit of $Bi_2O_3$ in Y--$BaTiO_3$ ceramics-retarded densification and grain growth, and further addition mitigated these retardation effects. The resistivity at room temperature increased with increasing amount of $Bi_2O_3$ and thus decreased the PTCR effect, probably due to the $Bi_2O_3$ segregation on the grain boundaries. From the complex ~mpedance pattern, it is known that the grain boundary resisitivity is dominant on the whole resistivity of sample. In the result of applying the defect chemistry, $Bi^{3+} \;and \; Bi^[5+}$ are substituted for Ua and Ti site, respectively. Boron nitride decomposed and formed liquid phase among the $BaTiO_3$ grains. The decomposed com~ ponents made the second phase and existed the tr~ple juntion from the result of EPMA. From the complex impendencc pattern, the gram and grain boundary resistivity were small. The grain size increased with increasing BN contents, and decreased grain boundary resistivity enhanced the PTCR effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.653-656
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• 1999

Effect of $Al_2O_3$ Additives on Microwave Dielectric Properties of $0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$-0.125 $Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ (y=0.05, 0.08) Ceramics was investigated. To control of $\tau\;{f}$ on microwave dielectric properties of $0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$-0.125 $Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ ceramics $Al_2O_3$ was doped in the composition range of 0 to 0.15 wt%. As a result, dielectric constant was decreased from 94 to 80 but $Q\cdot{f}_0$ value was increased from 4980 to 5210 GHz and temperature coefficient of resonant frequency can be controlled from +9 to -10$ppm^\circ{C}$ as an increase of$Al_2O_3$ doping concentration. Especially, a new microwave dielectric material having $\varepsilon\;_r=84,\;Q\cdot{f}_0=5120\;GHz\;and\;\tau_f=0\;ppm/^\circ{C}$ was obtained at $Al_2O_3$ doping concentration of 0.08 wt%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.645-648
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• 1999

With the variation of the sintering temperature and the amounts of B$_2$O$_3$, Bi$_3$O$_3$ and V$_2$O$_{5}$ , the densification and the piezoelectric properties of the MnO$_2$-doped PMN-PZT were investigated. The additives decreased the sintering temperature of ceramics. In the case of 0.5wt% B$_2$O$_3$, the sintering density, the mechanical quality factor, the electromechanical coupling factor and the piezoelectric constant were 7.51 (g/㎤), 1397, 51.1% and 305 (X10$^{-12}$ C/N) respectivly at 105$0^{\circ}C$. And the addition of lwt% Bi$_2$O$_3$, they were 7.59 (g/㎤) ,833,49.8% and 308 (X10$^{-12}$ C/N) respectivly at 1000 $^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.192-192
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• 2013

본 연구에서는 RF/DC 마그네트론 스퍼터링 시스템을 이용하여co-sputtering 방법으로 성장시킨 고이동도를 갖는Ge-doped $In_2O_3$In2O3 (IGO) 박막의 전기적, 광학적, 구조적 특성을 평가하고, 이를 유기태양전지와 유기발광다이오드에 적용함으로써 고이동도 IGO 투명전극의 소자 적용가능성을 타진하였다. GeO2 타겟에 인가되는 도핑 Power와 급속열처리 온도가 30 W, $500^{\circ}C$일 때, 최적화 된 IGO 박막으로부터 $2.8{\times}10^{-4}$ Ohm-cm의 낮은 비저항과 86.9% (550 nm)의 높은 투과도를 확보하였다. 뿐만 아니라 Near Infra-red (750~1,200 nm) 영역에서의 IGO투명전극의 광투과율이 결정질의 ITO보다 높은(약15%) 투과도를 보이는 것을 통해 IGO박막의 높은 LAS (Lewis Acid Strength) 값을 가지는 Ge 원소의 도핑이 NIR 영역의 광투과율 향상에 미치는 영향을 확인할 수 있었다. 최적 조건의 IGO 박막을 적용하여 Fill Factor 67.38%, Short circuit current density 8.43 mA/cm2, open circuit voltage 0.60 V, efficiency 3.44%의 유기태양전지 및 19.24%의 외부양자효율을 갖는 유기발광다이오드를 제작함으로써 결정질 ITO 전극(20.05%)을 대체할 수 있는 고투과, 고이동도 IGO 투명 전극 및 이를 이용한 광전소자 적용 가능성을 타진하였다.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.575-580
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• 2010

The microstructure and positive temperature coefficient of resistivity (PTCR) characteristics of 0.1 mol%$Na_2Ti_6O_{13}$ doped $0.94BaTiO_3-0.06(Bi_{0.5}Na_{0.5})TiO_3$ (BBNT-NT001) ceramics sintered at various temperatures from $1200^{\circ}C$ to $1350^{\circ}C$ were investigated in order to develop eco-friendly PTCR thermistors with a high Curie temperature ($T_C$). Resulting thermistors showed a perovskite structure with a tetragonal symmetry. When sintered at $1200^{\circ}C$, the specimen had a uniform microstructure with small grains. However, abnormally grown grains started to appear at $1250^{\circ}C$ and a homogeneous microstructure with large grains was exhibited when the sintering temperature reached $1325^{\circ}C$. When the temperature exceeded $1325^{\circ}C$, the grain growth was inhibited due to the numerous nucleation sites generated at the extremely high temperature. It is considered that $Na_2Ti_6O_{13}$ is responsible for the grain growth of the $0.94BaTiO_3-0.06(Bi_{0.5}Na_{0.5})TiO_3$) ceramics by forming a liquid phase during the sintering at around $1300^{\circ}C$. The grain growth of the BBNT-NT001 ceramics was significantly correlated with a decrease of resistivity. All the specimens were observed to have PTCR characteristics except for the sample sintered at $1200^{\circ}C$. The BBNT-NT001 ceramics had significantly decreased $\tilde{n}_{rt}$ and increased resistivity jump with increasing sintering temperature at from $1200^{\circ}C$ to $1325^{\circ}C$. Especially, the BBNT-NT001 ceramics sintered at $1325^{\circ}C$ exhibited superior PTCR characteristics of low resistivity at room temperature ($122\;{\Omega}{\cdot}cm$), high resistivity jump ($1.28{\times}10^4$), high resistivity temperature factor (20.4%/$^{\circ}C$), and a high Tc of $157.9^{\circ}C$.