• 제목/요약/키워드: Dissipation current

검색결과 448건 처리시간 0.03초

직렬연결된 저항형 한류기의 동시퀜치 현상 (Simultaneous quenching phenomena of resistive superconducting fault current limiter connected in series)

  • 최효상;김혜림;임해용;김인선;현옥배
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2000년도 KIASC Conference 2000 / 2000년도 학술대회 논문집
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    • pp.91-94
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    • 2000
  • We fabricated resistive super- conducting fault current limiters (SFCL) based on YBCO thin films grown on 2" diameter $Al_{2}O_{3}$ substrates. Two SFCLs with nearly identical properties. two SFCLs with nearly identical properties were connected in series to investigate simultaneous quenching. There was a difference of several half cycles in their quench starting time, although the difference was not more than 0.1 msec when they were operated separately. This imbalance was removed by connecting a shunt resistor to an SFCL in parallel. Increased power input at high voltages also reduced the initial imbalance in power dissipation. Further efforts on the simultaneous quench in SFCLs connected in series are on the way through methods such as the artificial control of quench speed.peed.

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12 비트 100 MHz CMOS 디지털/아날로그 변환기의 설계 (Design of A 12-Bit 100-MHz CMOS Digital-to-Analog Converter)

  • 이주상;최일훈;김규현;유상대
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 합동 추계학술대회 논문집 정보 및 제어부문
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    • pp.609-612
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    • 2002
  • In this paper, a 12-bit 100-MHz CMOS current steering digital-to-analog converter is designed. In the D/A converter, a driver circuit using a dynamic latch is implemented to obtain low glitch and thermometer decoder is used for low DNL errors, guaranteed monotonicity, reduced stitching noise. And a threshold voltage-compensated current source. The D/A converter is designed with 0.35-$\mu m$ CMOS technology at 3.3 V power supply and simulated with HSPICE. The maximum power dissipation of the designed DAC is 143 mW.

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A Current-mode peak detector circuit

  • Riewruja, V.;Linthong, A.;Kaewpoonsuk, A.;Guntapong, R.;Supaph, S.
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2000년도 제15차 학술회의논문집
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    • pp.512-512
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    • 2000
  • In this article, a current mode peak detector circuit is presented. The simple circuit configuration comprises four MOS transistors and one external capacitor. The realization method is suitable fur fabrication using CMOS technology and all transistors are operated in their saturation region. The proposed circuit exhibits a very low drop rate and provides high accuracy, high-speed and wide dynamic range. The proposed circuit has very low power dissipation and operates using a single 2.5V supply. Simulation results confirmed the characteristic of the proposed circuit are also included.

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A 3V-30MHz Analog CMOS Current-Mode Digitally Bandwidth Programmable Integrator

  • Yoon, Kwang-Sub;Hyun, Jai-Sop
    • Journal of Electrical Engineering and information Science
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    • 제2권4호
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    • pp.14-18
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    • 1997
  • A design methodology of the analog current-mode and width programmable integrator for a low voltage (3V) and low power application is developed and the integrator designed by this method is successfully fabricated by the 0.8$\mu\textrm{m}$ CMOS n-well single poly/double metal standard digital process. The integrator occupies the active chip area of 0.3$\textrm{mm}^2$. The experimental result illustrates a low power dissipation (1.0mW∼3.55 mW), 65dB of the dynamic range, and digitally and width programmability (10MHz∼30MHz) with an external digital 4 bit.

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발전기 고정자 권선 절연재료의 초기특성 (Initial Characteristics of Generator Stator Insulations)

  • 이영준;김희동
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 E
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    • pp.2110-2113
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    • 1999
  • This paper describes the initial characteristics of turbine generators at the Taean thermal power plant #4 and Wolsong nuclear power plant #2. The turbine generators had been in service for two years. The insulation diagnostic tests included measurements of insulation resistance, polarization index, ac current, dissipation factor($tan{\delta}$) and partial discharges (PD). The values of ac current and tan a were measured by Schering bridge. PD measurements were conducted using digital PD detector. The variation of $tan{\delta}$ and PD was confirmed in two generator stator insulations.

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PE-MOCVD에 의한 $SrTiO_3$ 박막의 제조 및 전기적 특성에 관한 평가 (Preparation and Electrical Properties of $SrTiO_3$ Thin Films by Plasma Enhanced Metal Organic Chemical vapor Deposition)

  • 김남경;윤순길
    • 한국세라믹학회지
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    • 제33권2호
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    • pp.177-182
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    • 1996
  • strontium titanate (SrTiO3) thin films deposited on Pt/MgO were prepared by Plasma Enhanced Metal Orgainc Chemical vapor Deposition (Pe-MOCVD). The crystallinity of SrTiO3 thin films increased with increasing depo-sition temperature and SrF2 second phase disappeared at 55$0^{\circ}C$ The films showed a dielectric constant of 177 and a dissipation factor of 0.0195 at 100 kHz. The variation of capacitance of the films with applied voltage was small showing paraelectric properties. The charge storage density and leakage current density were 40fC/${\mu}{\textrm}{m}$2 and 3.49$\times$10-7 A/cm2 at 0.25 MV/cm, respectively.

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Electrical Properties of $Ba_{1-x}Sr_xTiO_3$ Thin Films Deposited by Metalorganic Chemical Vapor Deposition

  • Yoon, Jong-Guk;Yoon, Soon-Gil;Lee, Won-Jea
    • The Korean Journal of Ceramics
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    • 제1권4호
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    • pp.204-208
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    • 1995
  • The microstructure and electrical propetries were investigated for polycrystalline $Ba^{1-x}Sr_xTiO_3$(BST) thin films deposited on Pt/Ti/$SiO_2$(PTSS) and Pt/MgO(PM) substrates by metalorganic chemical vapor deposition (MOCVD). BST films on PTSS have coulmnar and porous structures, while on PM have an equiaxied and dense structure. The dielectric constant and a dissipation factor of BST films on PTSS and 20 fC/$\mu \textrm{cm}^3$ on PTSS and 12fC/$\mu \textrm{cm}^2$ on PM was obtained at an applied electric field of 0.06 MV/cm. Leakage current density of BST films on PM was smaller than that on PTSS. The leakage current density level was about $8\times10^{-8}A/\textrm{cm}^2$ at 0.04MV/cm.

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세라믹스의 접합기술 (Current Status of Joining Ceramics and Metals)

  • 수가누마카츠아끼
    • 세라미스트
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    • 제9권6호
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    • pp.30-36
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    • 2006
  • Joining ceramics to metals has a variety of applications both in the structural and the electronics fields. One of the great benefits of the adoption of joining into the structural applications is to provide reliability to the ceramic components by backing up with metal components. In joining ceramics and metals, two key factors, i.e., establishing chemical bonding at interfaces and dissipation of thermal stress across interfaces, should be paid for attention. Many joining methods have been already established such as adhesive and mechanical joining, brazing and soldering, and solid state bonding. Each has its own benefits with some drawbacks. One can select a suitable process and materials following the requirements of the application. This report focuses on the current status of joining technology for ceramics/metal system.

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고온초전도 선재의 접합 및 인덱스손실 평가 (Estimation of joint and index dissipation in HTS tape)

  • 김정호;임준형;장석헌;김규태;주진호;최세용;나완수;강형구;고태국
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2003년도 추계학술대회 논문집
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    • pp.59-62
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    • 2003
  • We fabricated two HTS closed coils by using resistive-joint method and the joint resistance of the coil was estimated by field decay technique at 77 K. In addition, we used the Runge-kutta method for the numerical analysis to estimate the decay properties. The joint resistances were evaluated as a function of critical current of HTS closed coil and external field strength of excitation coil. It was observed that joint resistance was independent of critical current and external field strength. It was estimated that joint resistance was 8.0$\times$10$^{-9}$ $\Omega$ to 11.9$\times$10$^{-9}$ $\Omega$ for coils of contact length for 7 cm.

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A Resistance Deviation-To-Time Interval Converter Based On Dual-Slope Integration

  • Shang, Zhi-Heng;Chung, Won-Sup;Son, Sang-Hee
    • 전기전자학회논문지
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    • 제19권4호
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    • pp.479-485
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    • 2015
  • A resistance deviation-to-time interval converter based on dual-slope integration using second generation current conveyors (CCIIs) is designed for connecting resistive bridge sensors with a digital system. It consists of a differential integrator using CCIIs, a voltage comparator, and a digital control logic for controlling four analog switches. Experimental results exhibit that a conversion sensitivity amounts to $15.56{\mu}s/{\Omega}$ over the resistance deviation range of $0-200{\Omega}$ and its linearity error is less than ${\pm}0.02%$. Its temperature stability is less than $220ppm/^{\circ}C$ in the temperature range of $-25-85^{\circ}C$. Power dissipation of the converter is 60.2 mW.