• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.72-80
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• 2001

In this paper, we present a systematic method of extracting the input parameters of poly-Si TFT(Thin-Film Transistor) for Spice simulations. This method has been applied to two different types of poly-Si TFTs such as ELA (Excimer Laser Annealing) and SMC (Silicide Mediated Crystallization) with good fitting results to experimental data. Among the Spice circuit simulators, the PSpice has the GUI(graphic user interface) feature making the composition of complicated circuits easier. We added successfully the poly-Si TFT model of AIM-Spice to the PSpice simulator, and analyzed easily to compare the electrical characteristics of pixels without or with the line RC delay. In the comparative results, the ELA poly-Si TFT is superior to the SMC poly-Si TFT in the charging time and the kickback voltage for the TFT-LCD (Thin Film Transistor-Liquid Crystal Display).

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.27-32
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• 2013

Shape From Focus (SFF) is a passive optical technique to recover 3D structure of an object that utilizes focus information from 2D images of the object taken at different focus levels. Mostly, SFF methods use a single focus measure to compute image focus quality of each pixel in the image sequence. However, it is difficult to recover accurate 3D shape using a single focus measure, as different focus measures perform differently in diverse conditions. In this paper, a nonlinear Total Variation (TV) based approach is proposed for 3D shape recovery. To improve the result of surface reconstruction, several initial depth maps are obtained using different focus measures and the resultant 3D shape is obtained by diffusing them through TV. The proposed method is tested and evaluated by using image sequences of synthetic and real objects. The results and comparative analysis demonstrate the effectiveness of our method.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• ETRI Journal
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• v.24 no.4
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• pp.290-298
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• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

• Journal of Broadcast Engineering
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• v.21 no.1
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• pp.66-75
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• 2016

In this paper, we present a new method to reduce crosstalk of a glasses-free three-dimensional (3D) display using a multi-view image processing technique. Since crosstalk makes the current view image mixed with its neighboring ones, the output 3D image becomes severely blurred. We apply adaptive depth retargeting and view gradient-based crosstalk inverse filtering onto a multi-view image to minimize crosstalk of the glasses-free 3D display. In addition, overflow and underflow pixels are compensated by epipolar image pixel interpolation so that visual artifacts are minimized. Experimental results show that the proposed method reduces crosstalk more efficiently than the previous work while improving 3D image quality.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.10 s.352
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• pp.22-27
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• 2006

In this paper, we propose a method that can generate a computer-generated hologram (CGH) from the depth stream and color image outputs provided by an active sensor add-on camera. Distinguished from an existing holographic display system that uses a computer graphic model to generate CGH, this method utilizes a real camera image including a depth information for each object captured by the camera, as well as color information. This procedure consists of two steps that the acquirement of a depth-annotated image of real object, and generation of CGH according to the 3D information that is extracted from the depth cue. In addition, we display the generated CGH via a holographic display system. In experimental system we reconstruct an image made from CGH with a reflective LCD panel that had a pixel-pitch of 10.4um and resolution of 1408X1050.

• Journal of Information Display
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• v.10 no.1
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• pp.33-36
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• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

• Journal of the Korean Society for Precision Engineering
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• v.18 no.5
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• pp.171-176
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• 2001

Plasma Display Panel(PDP) is a type of flat panel display utilizing the light emission produced by gas discharge. Barrier Ribs of PDP separating each sub-pixel prevents optical and electrical crosstalks from adjacent sub-pixels. Mold for forming barrier ribs has been newly researched to overcome the disadvantages of conventional manufacturing process such as screen printing, sand-blasting and photosensitive glass methods. Mold for PDP barrier ribs have stripes of micro grooves transferring glass-material wall. In this paper, Stripes of grooves of which width 48${\mu}{\textrm}{m}$ and 270${\mu}{\textrm}{m}$, depth 124${\mu}{\textrm}{m}$, pitch 274${\mu}{\textrm}{m}$ was acquired by machining hard and brittle materials of WC, Silicon, Alumina with dicing saw blade. Maximum roughness of the bottom and sidewall of the grooves was respectively 120nm, 287nm in grooving WC. Maximum tilt angle caused by difference between upper-most width and lower-most width was 2$^{\circ}$. Maximum Radius of bottom curvatures was 7.75${\mu}{\textrm}{m}$. This results satisfies the specification for barrier ribs of 50 inch XGA PDP if the groove form of mold was fully transferred to the barrier ribs. Barrier ribs were formed with Silicone rubber mold, which is transferred from grooved hard materials. Silicone rubber mold has elasticity accommodating the waveness of lower glass plate of PDP.

• Journal of the Korea Computer Graphics Society
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• v.28 no.3
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• pp.113-123
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• 2022

Ray tracing-based rendering creates by far more realistic images than the traditional rasterization-based rendering. However, it is still burdensome when implemented for a Head-Mounted Display (HMD) system that demands a wide field of view and a high display refresh rate. Furthermore, for presenting high-quality images on the HMD screen, a sufficient number of ray sampling should be carried out per pixel to alleviate visually annoying spatial and temporal aliases. In this paper, we extend the recent selective foveated ray tracing technique by Kim et al. [1], and propose an improved real-time rendering technique that realizes the rendering effect of the classic Whitted-style ray tracing on the HMD system. In particular, by combining the ray tracing hardware-based acceleration technique and time-constrained rendering scheme, we show that fast HMD ray tracing is possible that is well suited to human visual systems.

• 전자공학회논문지 IE
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• v.46 no.4
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• pp.57-65
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• 2009

This paper presents the image contrast enhancement technique suitable for local dimming backlight of small-sized mobile display while achieving the reduction of the power consumption. In addition to the large-sized TFT-LCD, small-sized one has adopted LED for backlight. Since, conventionally, LED was mounted on the side edge of a display panel, global dimming method has been widely used. However, recently, new advanced method of local dimming by placing the LED to the backside of the display panel and it raised the necessity of sub-blocked processing after partitioning the target image. When the sub-blocked image has low brightness, the supply current of a backlight LED is reduced, which gives both enhancement of contrast ratio and power consumption reduction. In this paper, we propose simple and improved image enhancement algorithm suitable for the small-sized mobile display. After partitioning the input image by equal sized blocks and analyzing the pixel information in each block, we realize the primary contrast enhancement by independently processing the sub-blocks using the information such as histogram, mean, and standard deviation values of luminance(Y) component. And then resulting information is transferred to each backlight control unit for local dimming to realize the secondary contrast enhancement as well as reduction of power consumption.