• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.808-815
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• 2001

The three-phase diode rectifier with a capacitive filter is highly sensitive to line voltage unbalance, and may cause significantly unbalanced line currents even under slightly unbalanced voltage condition. This paper presents an analysis of this 'unbalance amplification' effect for an ideal rectifier circuit without ac-and dc-side inductors. The voltage unbalance is modeled by introducing a deviation voltage superimposed on balanced three-phase line voltages. With proper approximations, closed-form expressions for symmetrical components of the line current and current unbalance factor are derived in terms of the voltage unbalance factor, filter reactance, and load current. The validity of analytical predictions is confirmed by simulation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.546-550
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• 2013

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.751-755
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• 2009

We proposed circular AlGaN/GaN schottky barrier diode, which has no mesa structure near the current path. Proposed device showed low leakage current of 10 nA/mm at -100 V while that of the rectangular device was 34 nA/mm at the same condition. Proposed circular AIGaN/GaN SBD showed high forward current of 88.61 mA at 3,5 V while that of the conventional device was 14.1 mA at the same condition.

• ETRI Journal
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• v.26 no.5
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• pp.509-511
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• 2004

This paper describes a novel current driving circuit for an active matrix organic light emitting diode (AMOLED). The proposed current driving circuit has a lower power consumption and higher chip density for the AMOLED display compared with the conventional one because all elements operate at a normal voltage and are shielded from the high voltage of the panel. The chip size and power consumption of the current driving circuit for an AMOLED can be improved by about 30 to 40% and 10 to 20%, respectively, compared with the conventional one.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.365-370
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• 2000

Schottky contacts on n-In$\_$0.53//Ga$\_$0.47//As have been made by metal deposition on substrates cooled to a temperature of 77K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ø$\_$B/ was found to be increased from 0.2eV to 0.6eV with Ag metal. The saturation current density of the low temperature diode was about 4 orders smaller than for the room temperature diode. A current transport mechanism dominated by thermionic emission over the barrier for the low temperature diode was found from current-voltage-temperature measurement. Deep level transient spectroscopy studies exhibited a bulk electron trap at E$\_$c/-0.23eV. The low temperature process appears to reduce metal induced surface damage and may form an MIS (metal-insulator-semiconductor)-like structure at the interface.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.424.2-424.2
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• 2016

Solar cell converts light energy to electric energy. But a solar cell generates low power, PV module is fabricated by connected in series with dozens of solar cell. Owing to solar cell connected in series, power of PV module is influenced by shading or mismatch power of solar cells. To prevent power loss of PV module by shading or mismatch current, Bypass diodes are installed in PV module. Bypass diode operating reverse voltage by shading or mismatch power of solar cells bypass mismatch current. However, bypass diode in module exposed outdoor is easily damaged by surge voltage. In this paper, we confirm characteristics variation of PV module with damaged bypass diode. As a result, power of PV module with damaged bypass diode is reduced and Temperature of that is increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.285-287
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• 2009

When the laser diode is operated with continuous current, the light intensity from the laser diode deceases with time due to the temperature rise in the active layer. The phenomena, which is often called as DROOP, should be minimized in order to be used as a light source for the laser beam printer. We experimently examined the influences of the laser parameters such as threshold current, differential quantum efficiency on droop. It was found that decreasing the differential quantum efficiency of the laser diode is the effective way to minimize droop.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.6
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• pp.396-405
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• 2019

Single-phase full-bridge inverters have shoot-through problems. Dead time is an essential way of solving these issues, but it distorts the output voltage and current. Dual-buck inverters are designed to eliminate the abovementioned problems. However, these inverters result in switching power loss and electromagnetic interference due to the diode reverse-recovery problem. Previous studies have suggested reducing the switching power loss from diode reverse-recovery, but their proposed methods have complex circuit configurations and high system costs. To alleviate the switching power loss from diode reverse-recovery, the current work proposes a dual-buck inverter with a coupled inductor. In the structure of the proposed inverter, the current flowing into the original diode is divided into a new diode. Therefore, the switching power loss is reduced, and the efficiency of the proposed inverter is improved. Simulation waveforms and experimental results for a 1.0 kW prototype inverter are discussed to verify the performance of the proposed inverter.

• The Transactions of the Korean Institute of Power Electronics
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• v.7 no.6
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• pp.596-603
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• 2002

In this paper a new harmonic reduction method of three-phase diode rectifiers is proposed to improve input current performance using the zero-sequence harmonics injection technique. The proposed mothed, based on the third-harmonic injection, employs two half-bridge inverters and two single-phase transformers to independently shape the positive and negative dc rail currents of the diode rectifier. The actively shaped zero-sequence harmonic currents are t]ten circulated through the ac side of the rectifier using a zigzag transformer This results in pure sinusoidal input currents in the three-phase diode rectifier. Experimental results on a 1.5kVA prototype are provided to validate the proposed technique.

• Proceedings of the KIEE Conference
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• 2000.11d
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• pp.754-757
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• 2000

Si PIN diodes are subject to be damaged from the exposure of fast neutron by displacement of Si lattice structure. The defects are effective recombination centers for carriers which migrate through the base region of the PIN diode when forward voltage is applied. It causes an increase in current and a decrease in resistivity of the diode. This paper presents the development of a neutron sensor based on displacement damage effect. PIN diodes having various structures were made by micro-fabrication process, and neutron beam test was performed to identify neutron damage effect to the diode. From a result of the test, it was shown that the forward voltage drop of the diode, at a constant current, has good linearity for neutron dosage. Also it was found that the newton dosage can be measured by the pin diode neutron dosimeter with constant current power.