• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.109-110
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• 2005

We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.

• 분석과학
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• 제8권4호
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• pp.663-668
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• 1995

Ion transport of a polypyrrole/chloride (PPy/Cl) film and a polypyrrole/poly(styenesulfonate) (PPy/PSS) film as a function of applied dc potential was investigated by employing electrogravimetric impedance technique and electrochemical impedance technique. The cation and anion contribution to the whole charge capacitance and the diffusion coefficients of cation and anion in a PPy/PSS film were calculated by fitting the electrogravimetric impedance data with proposed model circuit. The diffusion coefficients of $Na^+$ in a 1 M $NaClO_4$ solution are over 1 order of magnitude larger than those of $ClO{_4}^-$, and $ClO{_4}^-$ contribution to charge compensation decreases as dc potential lowers. The charge compensation of a PPy/Cl film ir a 1 M CsCl solution is carried out largely by $Cl^-$ at 0.2 V vs. Ag/AgCl and by $Cs^+$ as well as $Cl^-$ at -0.4 V.

• Corrosion Science and Technology
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• 제15권6호
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• pp.259-264
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• 2016

With a specially designed electrochemical cell, the changes in impedance behavior for Inconel 600 and aluminide diffusion coatings under molten sulfate film with thermal cycles (from $800^{\circ}C$ to $350^{\circ}C$) were monitored with electrochemical impedance measurements. It was found that corrosion resistance for both materials increased with lower temperatures. At the same time, the state of molten salt was also monitored successfully by measuring the changes in impedance at high frequency, which generally represents the resistance of molten salt itself. After two thermal cycles, both Inconel 600 and aluminide diffusion coatings showed excellent corrosion resistance. The results from SEM observation and EDS analysis correlated well with the results obtained by electrochemical impedance measurements. It is concluded that electrochemical impedance is very useful for monitoring the corrosion resistance of materials under molten salt film conditions even with thermal cycles.

• Applied Science and Convergence Technology
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• 제23권6호
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• pp.371-375
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• 2014

Diffusion coefficient of Fe in polycrystalline host ZnSe as a mid-IR gain medium has been measured in the annealing temperature ranges of 850 to $950^{\circ}C$. The synthesis of the samples was carried out in quartz ampoule in which the Fe thin film deposited by physical vapor evaporation method on the ZnSe. One can realize that the diffusion coefficient strongly depends on the surface active surfactants through the cleaning process and the substrate temperature during the thin film deposition leading to $2.04{\times}10^{-9}cm^2/s$ for $Fe^{2+}:ZnSe$. The Annealing temperature dependence of the Fe ions diffusion in ZnSe was used to evaluate the activation energy, $E_a$=1.39 eV for diffusion and the pre-exponential factor $D_0$ of $13.5cm^2/s$.

• 한국자기학회지
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• 제15권2호
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• pp.133-136
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• 2005

In the case of contacts between semiconductor and metal in semiconductor devices, they tend to be unstable because of thermal budget. To prevent these problems we deposited W-C-N diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of the barrier is $1,000{\AA}$ and the pressure is 3 mTorr during the deposition. In this work we coated LSMO (CMR material) on W-C-N diffusion barrier and then we studied the interface effects between LSMO layer and W-C-N diffusion barrier. We got results that the magnetic characteristics of LSMO thin film are still maintained after annealing at $800^{\circ}C$ for 3 hr because W-C-N thin diffusion barrier was prevented the diffusion of oxygen between LSMO and Si substrate.

• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.273-277
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• 2018

This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed $Al_2O_3$ diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed $Al_2O_3$ diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed $Al_2O_3$-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 춘계 학술대회
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• pp.139-145
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• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• 반도체디스플레이기술학회지
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• 제4권2호
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• 반도체디스플레이기술학회지
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• 제10권3호
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• pp.29-33
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• 2011

Film growth rate and composition variation are numerically analyzed during the selective area growth of InGaN on the GaN triangular stripe microfacet in this study. Both the vapor phase diffusion and the surface diffusion are considered to determine the In composition on the InGaN surface. To obtain the In composition on the surface, flux of In atoms due to the surface diffusion is added to the concentration determined from the Laplace equation which is governing the gas phase diffusion. The solution model is validated by comparing the growth rates from the analyses to the experimental results of GaN and InN films. The In composition and resulting wave length are increased when the surface diffusion is considered. The In content is also increased according to the increasing mask width. The effect of mask width to the In content and wave length is increasing in the case of a small open region.

• Current Optics and Photonics
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• 제2권6호
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• pp.514-518
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• 2018

Carrier diffusion length in the light-sensitive material is one of the key elements in improving the light-current conversion efficiency of solar-cell devices. In this paper, we measured the carrier diffusion length in lead-halide perovskite ($MAPbI_3$) and mixed lead-halide ($MAPbI_{3-x}Cl_x$) perovskite devices using scanning photocurrent microscopy (SPCM). The SPCM signal decreased as we moved the focused laser spot away from the metal contact. By fitting the data with a simple exponential curve, we extracted the carrier diffusion length of each perovskite film. Importantly, the diffusion length of the mixed-halide perovskite was higher than that of the halide perovskite film by a factor of 3 to 6; this is consistent with the general expectation that the carrier mobility will be higher in the case of the mixed lead-halide perovskites. Finally, the diffusion length was investigated as a function of applied bias for both samples, and analyzed successfully in terms of the drift-diffusion model.