• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.826-832
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• 1998

In this study the thin films with the structure of Si+SiO$_2$+TiN are made by RF supttering method. TiN, which has small diffusion coefficient and low resistivity, is evaporated between SiO$_2$ and Al layers. It investigates the V-R characteristics depending on the thickness of SiO$_2$ which is used as insulation layer and researches its effects on voltage stability of thin film and varistor. These films show very small resistance valus in negative(-) voltage and large and large value in positive voltage band, and with the increase of voltage, resistance value is rapidly reduced and the satisfactory characteristic of varistor is shown at +1[V]. It is found that resistance value of TiN thin film is small and also TiN thin film has more current than the thin film which is not evaporated by TiN thin film. When Al electrode is evaporated of SiO$_2$ thin film, spiking occurs, but the spiking can be prevented with evaporation of TiN between SiO$_2$ and Al layers and this thin films in made easily because of its good attachment. With the increase of voltage, the resistance is changed into non-linear pattern and the bidirectional varistor characteristic is shown and then its theory can be verified by this experiment. Accordingly, when TiN is evaporated of Si Wafer(n-100), it obtains better voltage-resistance than thin film which is not evaporated and also when varistor character is used electrically to automatic control element such as elimination of flame, power distribution arrestor and constant voltage compensation, satisfactory reproducibilities are expected.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.81-81
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• 1997

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1704-1706
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• 1999

$YBa_2Cu_3O_x$ superconducting thick film was fabricated by surface diffusion process of $Y_2BaCUO_5$ and the mixed compound of $(3BaCuO_2+2CuO)$ expected to be liquid phase above the peritectic temperature of YBa2Cu30x. For the surface diffusion. 3BaCu02+2CuO mixed with binder material was patterned on $Y_2BaCuO_5$ substrate by the screen printing method. The characteristic of current limit on thick film fabricated was measured. The thick film limited the current from $2.8213mA_{rms}$ to $4.2034mA_{rms}$ with $500{\Omega}$ load resistance, and from $4.1831mA{rms}$ to $4.2150mA_{rms}$ with $10{\Omega}$ load resistance.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.198.1-198.1
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• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.982-990
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• 1999

YSZ/LSM composite cathode was fabricated by dip-coating of YSZ sol on the internal pore surface of a LSM cathode followed by sintering at low temperature (800-100$0^{\circ}C$) The YSZ coating significantly increased the TPB(Triple Phase Boundary) where the gas the electrode and the electrolyte were in contact with each other. Sinter the formation of resistive materials such as La2Zr2O7 or SrZrO3 was prevented due to the low processing temperature and TPB was increased due to the YSZ film coating the electrode resistance (Rel) was reduced about 100 times compared to non-modified cathode. From the analysis of a.c impedance it was shown that microstructural change of the cathode caused by YSZ film coating affected the oxygen reduction reaction. In the case of non-modified cathode the RDS (rate determining step) was electrode reactions rather than mass transfer or the oxygen gas diffusion in the experimental conditions employed in this study ($600^{\circ}C$-100$0^{\circ}C$ and 0,01-1 atm of Po2) for the YSZ film coated cathode however the RDS involved the oxygen diffusion through micropores of YSZ film at high temperature of 950-100$0^{\circ}C$ and low oxygen partial pressure of 0.01-0.03 atm.

• Transactions of the Korean Society of Automotive Engineers
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• v.3 no.2
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• pp.146-156
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• 1995

Growing international concern about environmental issues in recent years has led to new proposals for strengthening exhaust emission standards and fuel economy requirements throughout the world. The low emission vehicle(LEV) standards drawn up by the California Air Resources Board(CARB) in the U.S.A are noticeably stringent To cope with this regulation, a reduction of HC emission is the most important challenge for the automotive industry because HC emission levels are severer than any other components emission levels. In this paper, the apparatus for visulalizing the wall film flow in a intake manifold and the spark plug with optical fiber for detecting the signal from diffusion flame are developed to mal,e the HC formation mechanism clear. High speed camera system is also used to elucidate the correlation wall film flow and the diffusion flame. Using these methods, the effect of fuel injection systems such as injection direction, spray angle, atomised injection on HC emission levels is investigated. Consequently, the optimal fuel injection conditions for minimizing the wall film flow and reducing the HC emission are found through this research.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.110-111
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• 2007

In order to form a p-type ZnO thin film, ZnO thin film is deposited by pulsed laser deposition(PLD) on GaAs substrate followed by nermal treatment that ensures the diffusion of As atoms from the GaAs substrate to the ZnO thin films. Photoluminescence (PL) measurement reveals that the improved qualify of ZnO thin films is acquired at the growth temperature of $400^{\circ}C$. It is ZnO film grown at $100^{\circ}C$ that shows the change from n-type to p-type by the thermal treatment. Measured carrier concentration in the film is changed from $-5.70{\times}10^{13}\;to\;9.09{\times}10^{18}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.173-174
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• 2007

반도체 소자가 발달함에 따라서 박막은 더욱 다층화 되고 그 두께는 줄어들고 있다. 따라서 소자의 초고집적화를 위해서는 각 박막의 두께를 더욱 작게 하여야 한다. 또한 반도체 소자 제조 공정에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 금속 배선과 Si기판 사이에는 필연적으로 확산방지막을 삽입하게 되었다. 기존의 연구에서는 $1000\;{\AA}$의 W-B-C-N 확산방지막을 제작하여 연구하였다. 이 논문에서는 Cu의 확산을 방지하기 위한 W-B-C-N 확산방지막을 다양한 두께로 제작하여 그 특성을 확인하여 초고집적화를 위한 더욱 얇은 두께의 W-B-C-N 확산방지막에 대하여 연구하였다. W-B-C-N 확산방지막의 두께 변화에 대한 특성을 확인하기 위하여 $900^{\circ}C$까지 열처리 한 후 그 면저항을 측정하였다.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.63.2-64
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• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.10 no.4
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• pp.431-439
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• 1998

Falling film absorption process is an important problem in application such as absorption chillers. The presence of waves on the film affects the absorption process significantly. In the present study the characteristics of heat and mass transfer in laminar-wavy falling film were studied numerically. The wavy flow behavior was incorporated in the energy and diffusion equation. The numerical solution indicated that the interfacial wave increased the transfer rates remarkably. Interfacial shear stress and wave frequency seemed to be the dominant factors on the film Nusselt number and Sherwood number in the wavy film. A comparison of the transfer rates of the wavy film to that of the smooth film showed that the mass transfer rate could be increased by more than 50%.